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GP2L24J0000F

P1-P3P4-P6P7-P9P10-P12
7
Sheet No.: D3-A02301EN
GP2L24J0000F
Fig.7 Relative Collector Current vs.
Ambient Temperature
Fig.8 Collector Dark Current vs.
Ambient Temperature
Fig.9
Response Time vs. Load Resistance
Fig.11 Relative Collector Current vs.
Distance (Reference value)
Fig.12
Detecting Position Characteristics (1)
Fig.10
Test Circuit for Response Time
Relative collector current (%)
Ambient temperature T
a
(˚C)
0 25 50 75 100
0
I
F
=4mA
V
CE
=5V
−25
50
25
75
100
125
150
Collector dark current I
CEO
(A)
Ambient temperature T
a
(˚C)
25−25 50 75 1000
10
−4
V
CE
= 10V
10
−11
10
−10
10
−9
10
−8
10
−7
10
−6
10
−5
Output
Output
Input
V
CC
Input R
D
R
L
t
d
t
r
t
s
t
f
90%
10%
Reflector
Plate
Relative collector current (%)
Distance between sensor and Al evaporation glass d (mm)
012 45
80
100
40
60
20
0
3
I
F
=4mA
V
CE
=2V
T
a
=25˚C
Relative collector current (%)
Card moving distance L (mm)
−1
20
40
60
80
100
210 34567
I
F=4mA
VCE=2V
d=1mm
Ta=25˚C
0
Response time t
r
, t
f
, t
d
, t
s
(μs)
Load resistance R
L
(KΩ)
0.1
10
1
100
1 000
1
10010 1 000 10 000
V
CE
=2V
I
C
=10mA
T
a
=25˚C
t
r
t
f
t
d
t
s
8
Sheet No.: D3-A02301EN
GP2L24J0000F
Fig.13
Detecting Position Characteristics (2)
Remarks : Please be aware that all data in the graph are just for reference and not for guarantee.
Fig.14
Test Condition for Distance & Detecting
Position Characteristics
Fig.15 Frequency Response Fig.16 Spectral Sensitivity (Detecting side)
Relative collector current (%)
Card moving distance L (mm)
65432
100
80
60
40
20
1−1−2
0
0
IF=4mA
V
CE=2V
d=1mm
T
a=25˚C
Correspond to Fig.11
Al evaporation glass
d
Correspond to Fig.12
OMS card
L=0
d
−
White
1mm
Test condition
d=1mm
+
+
d=1mm
Test condition
1mm
White
−
d
L=0
OMS card
Correspond to Fig.13
Black
Black
I
F
=4mA
V
CE
=2V
I
F
=4mA
V
CE
=2V
−20
−15
−10
−5
0
100Ω
5
10Ω
I
F
=10mA
V
CE
=2V
T
a
=25˚C
R
L
=1kΩ
10
2
10
3
10
4
10
5
10
6
Frequency f (kHz)
Voltage gain Av (dB)
600
80
100
40
60
20
0
1 2001 1001 000900800700
yt
i
v
it
i
s
n
es
ev
i
t
al
e
R
(
%
)
Wavelength λ (nm)
T
a
=25˚C
9
Sheet No.: D3-A02301EN
GP2L24J0000F
■
Design Considerations
●
Design guide
1) Prevention of detection error
To prevent photointerrupter from faulty operation caused by external light, do not set the detecting face to
the external light.
2) Distance characteristic
Please refer to Fig.11 (Relative collector current vs. Distance) to set the distance of the photointerrupter
and the object.
This product is not designed against irradiation and incorporates non-coherent IRED.
●
Degradation
In general, the emission of the IRED used in photointerrupter will degrade over time.
In the case of long term operation, please take the general IRED degradation (50% degradation over 5
years) into the design consideration.
●
Parts
This product is assembled using the below parts.
• Photodetector (qty. : 1)
Category Material
Maximum Sensitivity
wavelength (nm)
Sensitivity
wavelength (nm)
Response time (μs)
Phototransister Silicon (Si) 800 700 to 1 200 80
• Photo emitter (qty. : 1)
Category Material
Maximum light emitting
wavelength (nm)
I/O Frequency (MHz)
Infrared emitting diode
(non-coherent)
Gallium arsenide (GaAs) 950 0.3
• Material
Case Lead frame Lead frame plating
Black polyphenylene 42Alloy SnCu plating
P1-P3P4-P6P7-P9P10-P12

GP2L24J0000F

Mfr. #:
Buy GP2L24J0000F
Manufacturer:
Sharp Microelectronics
Description:
PHOTOINTERRUPTER REFLEC .7MM PCB
Lifecycle:
New from this manufacturer.
Delivery:
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