OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

PBSS4240Y,115

P1-P3P4-P6P7-P8
2001 Jul 13 3
NXP Semiconductors Product data sheet
40 V low V
CEsat
NPN transistor
PBSS4240Y
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Notes
1. Device mounted on a printed-circuit board, single side copper, tinplated and standard footprint.
2. Device mounted on a printed-circuit board, single side copper, tinplated and mounting pad for collector 1 cm
2
.
THERMAL CHARACTERISTICS
Notes
1. Device mounted on a printed-circuit board, single side copper, tinplated and standard footprint.
2. Device mounted on a printed-circuit board, single side copper, tinplated and mounting pad for collector 1 cm
2
.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltage open emitter − 40 V
V
CEO
collector-emitter voltage open base − 40 V
V
EBO
emitter-base voltage open collector − 5 V
I
C
collector current (DC) − 2 A
I
CM
peak collector current − 3 A
I
BM
peak base current − 300 mA
P
tot
total power dissipation T
amb
≤ 25 °C; note 1 − 270 mW
T
amb
≤ 25 °C; note 2 − 430 mW
T
stg
storage temperature −65 +150 °C
T
j
junction temperature − 150 °C
T
amb
operating ambient temperature −65 +150 °C
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to
ambient
in free air; note 1 463 K/W
in free air; note 2 291 K/W
2001 Jul 13 4
NXP Semiconductors Product data sheet
40 V low V
CEsat
NPN transistor
PBSS4240Y
CHARACTERISTICS
T
amb
= 25 °C unless otherwise specified.
Note
1. Pulse test: t
p
≤ 300 μs; δ ≤ 0.02.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
collector-base cut-off current V
CB
= 30 V; I
E
= 0 − − 100 nA
V
CB
= 30 V; I
E
= 0; T
j
= 150 °C − − 50 μA
I
EBO
emitter-base cut-off current V
EB
= 4 V; I
C
= 0 − − 100 nA
h
FE
DC current gain V
CE
= 2 V; I
C
= 100 mA 350 470 −
V
CE
= 2 V; I
C
= 500 mA 300 450 −
V
CE
= 2 V; I
C
= 1 A 300 420 −
V
CE
= 2 V; I
C
= 2 A 150 250 −
V
CEsat
collector-emitter saturation
voltage
I
C
= 100 mA; I
B
= 1 mA − 45 70 mV
I
C
= 500 mA; I
B
= 50 mA − 70 100 mV
I
C
= 750 mA; I
B
= 15 mA − 120 180 mV
I
C
= 1 A; I
B
= 50 mA − 130 180 mV
I
C
= 2 A; I
B
= 200 mA − 240 320 mV
R
CEsat
equivalent on-resistance I
C
= 500 mA; I
B
= 50 mA; note 1 − 140 <200 mΩ
V
BEsat
base-emitter saturation voltage I
C
= 2 A; I
B
= 200 mA − − 1.1 V
V
BEon
base-emitter turn-on voltage V
CE
= 2 V; I
C
= 100 mA − − 0.75 V
C
c
collector capacitance V
CB
= 10 V; I
E
= I
e
= 0; f = 1 MHz − 15 20 pF
f
T
transition frequency I
C
= 100 mA; V
CE
= 10 V; f = 100 MHz 100 230 − MHz
2001 Jul 13 5
NXP Semiconductors Product data sheet
40 V low V
CEsat
NPN transistor
PBSS4240Y
PACKAGE OUTLINE
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC JEDEC EIAJ
SOT363 SC-88
wB
M
b
p
D
e
1
e
pin 1
index
A
A
1
L
p
Q
detail X
H
E
E
v
M
A
AB
y
0 1 2 mm
scale
c
X
132
4
56
Plastic surface mounted package; 6 leads SOT363
UNIT
A
1
max
b
p
cD
E
e
1
H
E
L
p
Qywv
mm
0.1
0.30
0.20
2.2
1.8
0.25
0.10
1.35
1.15
0.65
e
1.3
2.2
2.0
0.2 0.10.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15
0.25
0.15
A
1.1
0.8
97-02-28
P1-P3P4-P6P7-P8

PBSS4240Y,115

Mfr. #:
Buy PBSS4240Y,115
Manufacturer:
Nexperia
Description:
Bipolar Transistors - BJT TRANS BISS TAPE-7
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet