UMA11NTR

EMA11 / UMA11N / FMA11A
Transistors
1/3
Emitter common (dual digital transistors)
EMA11 / UMA11N / FMA11A
zFeatures
1) Two DTA143Z chips in a EMT or UMT or SMT
package.
2) Mounting cost and area can be cut in half.
zStructure
Epitaxial planar type
PNP silicon transistor
(Built-in resistor type)
The following characteristics apply to both DTr
1 and DTr2.
zEquivalent circuit
R1 R1
DTr1DTr2
(3) (4) (5)
(2)
(1)
R1 R1
DTr1DTr2
(3) (2) (1)
(4)
(6)
R
1
=4.7k
R
2
=47k
R
1
=4.7k
R
2
=47k
R2R2 R2R2
EMA11 / UMA11N FMA11A
zPackaging specifications
Taping
UMA11N
EMA11
Type
FMA11A
TRT2R
30008000
T148
3000
Package
Code
Basic ordering unit (pieces)
zExternal dimensions (Unit : mm)
ROHM : UMT5
EIAJ : SC-88A
ROHM : SMT5
EIAJ : SC-74A
UMA11N
FMA11A
Abbreviated symbol: A11
Abbreviated symbol: A11
Abbreviated symbol: A11
All terminals have same dimensions
All terminals have same dimensions
All terminals have same dimensions
0.9
0.15
0to0.1
0.1Min.
0.7
2.1
1.3
0.65
2.0
(
4
)
(
1
)
(
6
)
0.2
1.25
(
2
)
0.65
(
3
)
0to0.1
1.1
0.8
0.3to0.6
0.15
1.6
2.8
2.9
0.95
1.9
(
4
)
(
5
)
(
1
)
0.3
(
3
)
0.95
(
2
)
ROHM : EMT5
EMA11
0.22
1.2
1.6
(
1
)
(
2
)
(
3
)
(
5
)
(
4
)
0.13
0.5
0.5
0.5
1.0
1.6
EMA11 / UMA11N / FMA11A
Transistors
2/3
zAbsolute maximum ratings (Ta = 25°C)
1 120mW per element must not be exceeded.
2 200mW per element must not be exceeded.
Supply voltage
Input voltage
Output current
Power
dissipation
Junction temperature
Storage temperature
Parameter Symbol
Limits
Unit
V
CC
50
V
V
IN
30
V
5
I
O
100
mA
I
C (Max.)
100
Tj
150
°C
Tstg
55 to +150
°C
Pd
EMA11 / UMA11N 150 (TOTAL)
mW
FMA11A 300 (TOTAL)
1
2
zElectrical characteristics (Ta = 25°C)
Parameter Symbol
V
I (off)
V
I (on)
V
O (on)
I
I
I
O (off)
R
1
G
I
R
2
/R
1
Min.
1.3
3.29
80
8
0.1
4.7
10
0.5
0.3
1.8
0.5
6.11
12
V
V
CC
=5V, I
O
=100µA
V
O
=0.3V, I
O
=5mA
I
O
/I
I
=5mA/0.25mA
V
I
=5V
V
CC
=50V, V
I
=0V
V
O
=5V, I
O
=10mA
V
mA
µA
k
−−
Typ. Max. Unit Conditions
Input voltage
Output voltage
Input current
Output current
DC current gain
Transition frequency
Input resistance
Resistance ratio
Transition frequency of the device
f
T
250 V
CE
=10mA, I
E
=5mA, f=100MHz
MHz
zElectrical characteristic curves
INPUT VOLTAGE : V
I (on) (V)
OUTPUT CURRENT : I
O (A)
200m
100m
100µ−1m 10m 100m200µ−2m 20m500µ−5m 50m
V
O
=0.3V
100
50
20
10
5
2
1
500m
Fig.1 Input voltage vs. output current
(ON characteristics)
25°C
100°C
Ta=40°C
VCC=5V
0 3
10m
1µ
2m
5m
1m
200µ
500µ
100µ
20µ
50µ
10µ
2µ
5µ
0.5 1 1.5 2 2.5
INPUT VOLTAGE : V
I (off) (V)
OUTPUT CURRENT : Io (A)
Fig.2 Output current vs. input voltage
(OFF characteristics)
Ta=100°C
25°C
40°C
V
O
=5V
100µ−1m 10m 100m200µ−2m 20m500µ−5m 50m
DC CURRENT GAIN : G
I
OUTPUT CURRENT : IO (A)
1k
500
200
100
50
20
10
5
2
1
Fig.3 DC current gain vs. output
current
Ta=100°C
25°C
40°C
EMA11 / UMA11N / FMA11A
Transistors
3/3
l
O
/l
I
=20
100µ
1m 10m 100m
200µ−2m 20m500µ−5m 50m
1
500m
200m
100m
10m
50m
5m
20m
2m
1m
OUTPUT CURRENT : I
O
(A)
OUTPUT VOLTAGE : V
O (on)
(V)
Fig.4 Output voltage vs. output
current
Ta=100°C
25°C
40°C

UMA11NTR

Mfr. #:
Manufacturer:
ROHM Semiconductor
Description:
Bipolar Transistors - Pre-Biased DUAL PNP 50V 100MA
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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