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DMN2050L-7

P1-P3P4-P6
DMN2050L
Document number: DS31502 Rev. 4 - 2
1 of 6
www.diodes.com
October 2013
© Diodes Incorporated
DMN2050L
NEW PRODUCT
N-CHANNEL ENHANCEMENT MODE MOSFET
Features
Low On-Resistance
29m @V
GS
= 4.5V
50m @V
GS
= 2.5V
100m @V
GS
= 2.0V
Very Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SOT23
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminal Connections: See Diagram
Terminals: Finish Matte Tin annealed over Copper
leadframe. Solderable per MIL-STD-202, Method 208
Weight: 0.008 grams (approximate)
Ordering Information (Note 4)
Part Number Case Packaging
DMN2050L-7 SOT23 3000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Date Code Key
Year 2008 2009 2010 2011 2012 2013 2014 2015
Code V W X Y Z A B C
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
SOT23
Top View
E
q
uivalent Circuit
Top View
D
G
S
Source
Gate
Drain
MN3 = Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
= Date Code Marking for CAT (Chengdu Assembly/ Test site)
Y or = Year (ex: A = 2013)
M = Month (ex: 9 = September)
MN3
YM
Chengdu A/T Site
Shanghai A/T Site
e3
MN3
YM
Y
YM
DMN2050L
Document number: DS31502 Rev. 4 - 2
2 of 6
www.diodes.com
October 2013
© Diodes Incorporated
DMN2050L
NEW PRODUCT
Maximum Ratings (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage
V
DSS
20 V
Gate-Source Voltage
V
GSS
±12 V
Drain Current (Note 5)
I
D
5.9 A
Pulsed Drain Current (Note 6)
I
DM
21 A
Thermal Characteristics
Characteristic Symbol Value Units
Total Power Dissipation (Note 5)
P
D
1.4 W
Thermal Resistance, Junction to Ambient (Note 5)
R
θJA
90 °C/W
Operating and Storage Temperature Range
T
J
, T
STG
-55 to +150 °C
Electrical Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV
DSS
20
V
V
GS
= 0V, I
D
= 250µA
Zero Gate Voltage Drain Current
I
DSS
1 µA
V
DS
= 20V, V
GS
= 0V
Gate-Source Leakage
I
GSS
100
nA
V
GS
= 12V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS(th)
0.45
1.4 V
V
DS
= V
GS
, I
D
= 250µA
Static Drain-Source On-Resistance
R
DS(ON)
24
42
68
29
50
100
m
V
GS
= 4.5V, I
D
= 5.0A
V
GS
= 2.5V, I
D
= 3.1A
V
GS
= 2.0V, I
D
= 1.5A
Forward Transfer Admittance
|Y
fs
|
8
S
V
DS
=5V, I
D
= 2.1A
Diode Forward Voltage (Note 7)
V
SD
0.9 1.4 V
V
GS
= 0V, I
S
= 2.0A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
C
iss
532
pF
V
DS
= 10V, V
GS
= 0V
f = 1.0MHz
Output Capacitance
C
oss
144
pF
Reverse Transfer Capacitance
C
rss
117
pF
Gate Resistance
R
G

1.3

V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
SWITCHING CHARACTERISTICS (Note 8)
Total Gate Charge
Q
g

6.7

nC
V
DS
= 10V, V
GS
= 4.5V, I
D
= 5.0A
Gate-Source Charge
Q
gs

0.8

V
DS
= 10V, V
GS
= 4.5V, I
D
= 5.0A
Gate-Drain Charge
Q
gd

3.0

V
DS
= 10V, V
GS
= 4.5V, I
D
= 5.0A
Notes: 5. Device mounted on FR-4 PCB, on 2oz Copper pad layout with R
θJA
= 90°C/W.
6. Repetitive rating, pulse width limited by junction temperature.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
DMN2050L
Document number: DS31502 Rev. 4 - 2
3 of 6
www.diodes.com
October 2013
© Diodes Incorporated
DMN2050L
NEW PRODUCT
0
4
8
12
16
20
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
Fig. 1 Typical Output Characteristic
V , DRAIN-SOURCE VOLTAGE (V)
DS
I, D
R
AIN
C
U
R
R
EN
T
(A)
D
V = 1.5V
GS
V = 2.0V
GS
V = 3.0V
GS
V = 4.5V
GS
V = 10V
GS
V = 2.5V
GS
0
4
8
12
16
20
0 0.5 1 1.5 2 2.5 3
Fig. 2 Typical Transfer Characteristic
V , GATE-SOURCE VOLTAGE (V)
GS
I, D
R
AI
N
C
U
R
R
E
N
T
(A)
D
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
V = 5V
DS
0
0.01
0.02
0.03
0.04
0.05
0.06
0.07
0.08
04 8121620
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
I , DRAIN-SOURCE CURRENT (A)
D
R , DRAIN-SOURCE ON-RESISTANCE (m )
DS(ON)
V = 4.5V
GS
V = 10V
GS
V = 2.5V
GS
0
0.02
0.04
0.06
048121620
I , DRAIN CURRENT (A)
D
Fig. 4 Typical On-Resistance
vs. Drain Current and Temperature
R
, D
R
AI
N
-S
O
U
R
C
E
O
N
-
R
ESIS
T
A
N
C
E ( )
DS(ON)
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
V = 4.5V
GS
Fig. 5 On-Resistance Variation with Temperature
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
A
0.6
0.8
1.0
1.2
1.4
1.6
R
, D
R
AI
N
-S
O
U
R
C
E
ON-RESISTANCE (NORMALIZED)
DSON
V = 4.5V
I = 5A
GS
D
V = 10V
I = 10A
GS
D
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
Fig. 6 Gate Threshold Variation vs. Ambient Temperature
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
A
V , GATE THRESHOLD VOLTAGE (V)
GS(TH)
I = 250µA
D
I = 1mA
D
P1-P3P4-P6

DMN2050L-7

Mfr. #:
Buy DMN2050L-7
Manufacturer:
Diodes Incorporated
Description:
MOSFET 1.4W 20V
Lifecycle:
New from this manufacturer.
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