OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

SQP60N06-15_GE3

P1-P3P4-P6P7-P8
SQP60N06-15
www.vishay.com
Vishay Siliconix
S13-0840-Rev. A, 22-Apr-13
1
Document Number: 63554
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Automotive N-Channel 60 V (D-S) 175 °C MOSFET
FEATURES
•TrenchFET
®
Power MOSFET
• Package with Low Thermal Resistance
• AEC-Q101 Qualified
d
•100 % R
g
and UIS Tested
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
Notes
a. Package limited.
b. Pulse test; pulse width 300 μs, duty cycle 2 %.
c. When mounted on 1" square PCB (FR-4 material).
d. Parametric verification ongoing.
PRODUCT SUMMARY
V
DS
(V) 60
R
DS(on)
() at V
GS
= 10 V 0.015
I
D
(A) 56
Configuration Single
D
G
S
N-Channel MOSFET
Top View
TO-220AB
GD S
ORDERING INFORMATION
Package TO-220
Lead (Pb)-free and Halogen-free SQP60N06-15-GE3
ABSOLUTE MAXIMUM RATINGS (T
C
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
DS
60
V
Gate-Source Voltage V
GS
± 20
Continuous Drain Current
T
C
= 25 °C
I
D
56
A
T
C
= 125 °C 32
Continuous Source Current (Diode Conduction)
a
I
S
60
Pulsed Drain Current
b
I
DM
190
Single Pulse Avalanche Current
L = 0.1 mH
I
AS
29
Single Pulse Avalanche Energy E
AS
42 mJ
Maximum Power Dissipation
b
T
C
= 25 °C
P
D
107
W
T
C
= 125 °C 35
Operating Junction and Storage Temperature Range T
J
, T
stg
- 55 to + 175 °C
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL LIMIT UNIT
Junction-to-Ambient PCB Mount
c
R
thJA
40
°C/W
Junction-to-Case (Drain) R
thJC
1.4
SQP60N06-15
www.vishay.com
Vishay Siliconix
S13-0840-Rev. A, 22-Apr-13
2
Document Number: 63554
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (T
C
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage V
DS
V
GS
= 0, I
D
= 250 μA 60 - -
V
Gate-Source Threshold Voltage V
GS(th)
V
DS
= V
GS
, I
D
= 250 μA 2.5 - 3.5
Gate-Source Leakage I
GSS
V
DS
= 0 V, V
GS
= ± 20 V - - ± 100 nA
Zero Gate Voltage Drain Current I
DSS
V
GS
= 0 V V
DS
= 60 V - - 1
μA V
GS
= 0 V V
DS
= 60 V, T
J
= 125 °C - - 50
V
GS
= 0 V V
DS
= 60 V, T
J
= 175 °C - - 250
On-State Drain Current
a
I
D(on)
V
GS
= 10 V V
DS
5 V 75 - - A
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= 10 V I
D
= 30 A - 0.012 0.015
V
GS
= 10 V I
D
= 30 A, T
J
= 125 °C - - 0.027
V
GS
= 10 V I
D
= 30 A, T
J
= 175 °C - - 0.033
Forward Transconductance
b
g
fs
V
DS
= 15 V, I
D
= 30 A - 61 - S
Dynamic
b
Input Capacitance C
iss
V
GS
= 0 V V
DS
= 25 V, f = 1 MHz
- 1983 2480
pF Output Capacitance C
oss
- 314 395
Reverse Transfer Capacitance C
rss
- 125 160
Total Gate Charge
c
Q
g
V
GS
= 10 V V
DS
= 30 V, I
D
= 60 A
-3350
nC Gate-Source Charge
c
Q
gs
- 10.7 -
Gate-Drain Charge
c
Q
gd
-8.8-
Gate Resistance R
g
f = 1 MHz 0.8 1.6 2.4
Turn-On Delay Time
c
t
d(on)
V
DD
= 30 V, R
L
= 0.5
I
D
60 A, V
GEN
= 10 V, R
g
= 1
-1117
ns
Rise Time
c
t
r
-1218
Turn-Off Delay Time
c
t
d(off)
-2132
Fall Time
c
t
f
-711
Source-Drain Diode Ratings and Characteristics
b
Pulsed Current
a
I
SM
- - 190 A
Forward Voltage V
SD
I
F
= 30 A, V
GS
= 0 - 0.9 1.5 V
SQP60N06-15
www.vishay.com
Vishay Siliconix
S13-0840-Rev. A, 22-Apr-13
3
Document Number: 63554
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (T
A
= 25 °C, unless otherwise noted)
Output Characteristics
Transconductance
Capacitance
Transfer Characteristics
On-Resistance vs. Drain Current
Gate Charge
0
20
40
60
80
100
0 3 6 9 12 15
V
GS
= 10 V thru 7 V
V
GS
=5V
V
GS
=4V
V
GS
=6V
V
DS
- Drain-to-Source Voltage (V)
I
D
- Drain Current (A)
0
20
40
60
80
100
0 12 24 36 48 60
g
fs
- Transconductance (S)
I
D
- Drain Current (A)
T
C
= 125 °C
T
C
= - 55 °C
T
C
= 25 °C
C
rss
0
500
1000
1500
2000
2500
3000
0 102030405060
C
iss
C
oss
V
DS
- Drain-to-Source Voltage (V)
C - Capacitance (pF)
0
20
40
60
80
100
0 2 4 6 8 10
I
D
- Drain Current (A)
V
GS
- Gate-to-Source Voltage (V)
T
C
= - 55 °C
T
C
= 125 °C
T
C
= 25 °C
0.000
0.005
0.010
0.015
0.020
0.025
0.030
0 20 40 60 80 100
R
DS(on)
- On-Resistance (Ω)
I
D
- Drain Current (A)
V
GS
= 10 V
0
2
4
6
8
10
0 7 14 21 28 35
V
GS
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
V
DS
= 30 V
I
D
= 60 A
P1-P3P4-P6P7-P8

SQP60N06-15_GE3

Mfr. #:
Buy SQP60N06-15_GE3
Manufacturer:
Vishay
Description:
MOSFET N-CH 60V 56A TO220AB
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet