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RSS110N03TB

P1-P3P4-P4
RSS110N03
Transistor
1/3
Switching (30V, ±11A)
RSS110N03
zFeatures
1) Low on-resistance.
2) Built-in G-S Protection Diode.
3) Small and Surface Mount Package (SOP8).
zApplications
Power switching, DC/DC converter.
zExternal dimensions (Unit : mm)
Each lead has same dimensions
SOP8
(1)Source
(2)Source
(3)Source
(4)Gate
(5)Drain
(6)Drain
(7)Drain
(8)Drain
5.0±0.2
0.2±0.1
6.0±0.3
3.9±0.15
0.5±0.1
(
1
)
(
4
)
(
8
)
(
5
)
Max.1.75
1.27
0.15
0.4±0.1
1.5±0.1
0.1
zStructure
•Silicon N-channel MOS FET
zEquivalent circuit
∗A protection diode is included between the gate and
the source terminals to protect the diode against static
electricity when the product is in use. Use the protection
circuit when the fixed voltages are exceeded.
(1)Source
(2)Source
(3)Source
(4)Gate
(5)Drain
(6)Drain
(7)Drain
(8)Drain
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
∗2
∗1
(8) (7) (6) (5)
(1) (2) (3) (4)
(1) (2) (3) (4)
(8) (7) (6) (5)
zAbsolute maximum ratings (Ta=25°C)
Parameter
V
V
DSS
Symbol
30
V
V
GSS
20
A
I
D
±11
A
I
DP
±44
A
I
S
1.6
A
I
SP
6.4
W
P
D
2
°C
Tch 150
°C
Tstg
−55 to +150
Limits Unit
Drain-source voltage
Gate-source voltage
Drain current
Total power dissipatino
Channel temperature
Strage temperature
Continuous
Pulsed
Continuous
Source current
(Body diode)
Pulsed
∗1 Pw≤10µs, Duty cycle≤1%
∗
2 Mounted on a ceramic board.
∗1
∗1
∗2
RSS110N03
Transistor
2/3
zThermal resistance (Ta=25°C)
°C / W
Rth (ch-a)
62.5
Parameter Symbol
Limits
Unit
Channel to ambient
∗
Mounted on a ceramic board.
∗
zElectrical characteristics (Ta=25°C)
Parameter Symbol
I
GSS
Y
fs
Min.
−−10 µAV
GS
=20V, V
DS
=0V
V
DD
15V
Typ. Max.
Unit
Conditions
Gate-source leakage
V
(BR) DSS
30 −−VI
D
=1mA, V
GS
=0V
Drain-source breakdown voltage
I
DSS
−−10 µAV
DS
=30V, V
GS
=0V
Zero gate voltage drain current
V
GS (th)
1.0 − 2.5 V V
DS
=10V, I
D
=1mAGate threshold voltage
−
Static drain-source on-starte
resistance
R
DS (on)
− mΩ
Forward transfer admittance
−
Input capacitance
−−S
Output capacitance
C
iss
−−pF V
DS
=10V
Reverse transfer capacitance
C
oss
−−pF V
GS
=0V
Tum-on delay time
C
rss
−−pF f=1MHz
V
GS
=10V
R
GS
=10Ω
Rise time
t
d (on)
−−ns
Tum-off delay time
t
r
−−ns
Fall time
t
d (off)
−−ns
Total gate charge
t
f
−−ns
Gate-source charge
Q
g
−−nC
Gate-drain charge
Q
gs
−−nC V
GS
=5V
Q
gd
−−nC
∗Pulsed
∗
∗
∗
∗
∗
∗
∗
∗
∗
∗
∗
7.6 10.4 I
D
=±11A, V
GS
=10V
10.3 14.3 I
D
=±11A, V
GS
=4.5V
11.2 15.5 I
D
=±11A, V
GS
=4V
8.0 I
D
=±11A, V
DS
=10V
1300
410
250
9
R
L
=2.73Ω
17
60
30
17
3.3
7.1 I
D
=±11A
I
D
=5.5A, V
DD
15V
zBody diode characteristics (Source-Drain Characteristics) (Ta=25°C)
Forward voltage
V
SD
−−1.2 V I
S
=6.4A, V
GS
=0V
Parameter Symbol
Min. Typ. Max.
Unit
Conditions
∗Pulsed
∗
zElectrical characteristic curves
0.01 0.1 1 10 100
DRAIN-SOURCE VOLTAGE : V
DS
(V)
10
CAPACITANCE : C
(pF)
1000
10000
100
Ta=25°C
f=1MHz
V
GS
=0V
Fig.1 Typical Capacitance
vs. Drain-Source Voltage
C
iss
C
oss
C
rss
0.01 0.1 1 10 100
DRAIN CURRENT : I
D
(A)
1
10
SWITCHING TIME : t
(ns)
1000
10000
100
Ta=25°C
V
DD
=15V
V
GS
=10V
R
G
=10Ω
Pulsed
Fig.2 Switching Characteristics
t
r
t
f
t
d (off)
t
d (on)
024681012141618
TOTAL GATE CHARGE : Qg
(nC)
0
1
2
3
4
5
6
7
8
GATE-SOURCE VOLTAGE : V
GS
(V)
Ta=25°C
V
DD
=15V
I
D
=11A
R
G
=10Ω
Pulsed
Fig.3
Dynamic Input Characteristics
RSS110N03
Transistor
3/3
0.0 0.5 1.0 1.5 2.0 2.5 3.0
GATE-SOURCE VOLTAGE : V
GS
(V)
100
10
1
0.1
0.01
0.001
DRAIN CURRENT : I
D
(A)
Fig.4
Typical Transfer Characteristics
Ta= −25°C
Ta=25°C
Ta=75°C
Ta=125°C
V
DS
=10V
Pulsed
0246810121416
GATE-SOURCE VOLTAGE : V
GS
(V)
0
50
100
150
200
250
300
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE :
R
DS (on)
(mΩ)
Fig.5 Static Drain-Source
On-State Resistance vs.
Gate-Source Voltage
Ta=25°C
Pulsed
I
D
=11A
I
D
=5.5A
0.0 0.5 1.0 1.5
SOURCE-DRAIN VOLTAGE : V
SD
(V)
0.01
0.1
1
10
100
SOURCE CURRENT : I
s
(A)
Fig.6 Source Current vs.
Source-Drain Voltage
V
GS
=0V
Pulsed
Ta= −25°C
Ta=25°C
Ta=75°C
Ta=125°C
0.1 1 10 100
DRAIN CURRENT : I
D
(A)
1
10
100
1000
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE :
R
DS (on)
(mΩ)
Fig.7 Static Drain-Source
On-State Resistance
vs. Drain Current (Ι)
Ta= −25°C
Ta=25°C
Ta=75°C
Ta=125°C
V
GS
=10V
Pulsed
0.1 1 10 100
1
10
100
1000
Ta= −25°C
Ta=25°C
Ta=75°C
Ta=125°C
V
GS
=4.5V
Pulsed
DRAIN CURRENT : I
D
(A)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE :
R
DS (on)
(mΩ)
Fig.8 Static Drain-Source
On-State Resistance
vs. Drain Current (ΙΙ)
0.1 1 10 100
1
10
100
1000
Ta= −25°C
Ta=25°C
Ta=75°C
Ta=125°C
V
GS
=4V
Pulsed
DRAIN CURRENT : I
D
(A)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE :
R
DS (on)
(mΩ)
Fig.9 Static Drain-Source
On-State Resistance
vs. Drain Current (ΙΙΙ)
P1-P3P4-P4

RSS110N03TB

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Description:
MOSFET N-CH 30V 11A 8-SOIC
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