© 2006 IXYS CORPORATION All rights reserved
Fig. 14. Resistive Turn-on
Rise Time vs. Drain Current
25
30
35
40
45
50
55
60
65
70
75
25 30 35 40 45 50
I
D
- Amperes
t
r
- Nanosecond
R
G
= 5
Ω
V
GS
= 10V
V
DS
= 30V
T
J
= 125ºC
T
J
= 25ºC
Fig. 15. Resistive Turn-on
Switching Times vs. Gate Resistance
20
40
60
80
100
120
140
160
4 6 8 101214161820
R
G
- Ohms
t
r
- Nanoseconds
30
35
40
45
50
55
60
65
t
d ( o n )
- Nanoseconds
t
r
t
d(on)
- - - -
T
J
= 125ºC, V
GS
= 10V
V
DS
= 30V
I
D
= 50A, 25A
Fig. 16. Resistive Turn-off
Switching Times vs. Junction Temperature
45
47
49
51
53
55
57
59
61
63
65
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
f
- Nanosecond
50
54
58
62
66
70
74
78
82
86
90
t
d ( o f f )
- Nanosecond
t
f
t
d(off)
- - - -
R
G
= 5
Ω
, V
GS
= 10V
V
DS
= 30V
I
D
= 25A, 50A
I
D
= 50A, 25A
Fig. 17. Resistive Turn-off
Switching Times vs. Drain Current
46
48
50
52
54
56
58
60
62
64
24 28 32 36 40 44 48
I
D
- Amperes
t
f
- Nanoseconds
48
52
56
60
64
68
72
76
80
84
t
d ( o f f )
- Nanoseconds
t
f
t
d(off)
- - - -
R
G
= 5
Ω
, V
GS
= 10V
V
DS
= 30V
T
J
= 125ºC
T
J
= 25ºC
Fig. 13. Resistive Turn-on
Rise Time vs. Junction Temperature
20
25
30
35
40
45
50
55
60
65
70
75
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
r
- Nanosecond
R
G
= 5
Ω
V
GS
= 10V
V
DS
= 30V
I
D
= 50A
I
D
= 25A
Fig. 18. Resistive Turn-off
Switching Times vs. Gate Resistance
50
70
90
110
130
150
170
190
4 6 8 101214161820
R
G
- Ohms
t
f
- Nanoseconds
50
80
110
140
170
200
230
260
t
d ( o f f )
- Nanoseconds
t
f
t
d(off)
- - - -
T
J
= 125ºC, V
GS
= 10V
V
DS
= 30V
I
D
= 50A
I
D
= 25A
IXYS REF: T_220N055T (5V) 6-16-06.xls
IXTA 220N055T
IXTP 220N055T
