NTD32N06L-001

© Semiconductor Components Industries, LLC, 2007
June, 2007 - Rev. 5
1 Publication Order Number:
NTD32N06L/D
NTD32N06L
Power MOSFET
32 Amps, 60 Volts
Logic Level, N-Channel DPAK
Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits.
Features
Smaller Package than MTB30N06VL
Lower R
DS(on)
, V
DS(on)
, and Total Gate Charge
Lower and Tighter V
SD
Lower Diode Reverse Recovery Time
Lower Reverse Recovery Stored Charge
Pb-Free Packages are Available
Typical Applications
Power Supplies
Converters
Power Motor Controls
Bridge Circuits
MAXIMUM RATINGS (T
J
= 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain-to-Source Voltage V
DSS
60 Vdc
Drain-to-Gate Voltage (R
GS
= 10 MW)
V
DGR
60 Vdc
Gate-to-Source Voltage - Continuous
- Non-Repetitive (t
p
v10 ms)
V
GS
V
GS
"20
"30
Vdc
Drain Current - Continuous @ T
A
= 25°C
- Continuous @ T
A
= 100°C
- Single Pulse (t
p
v10 ms)
I
D
I
D
I
DM
32
22
90
Adc
Apk
Total Power Dissipation @ T
A
= 25°C
Derate above 25°C
Total Power Dissipation @ T
A
= 25°C (Note 1)
Total Power Dissipation @ T
A
= 25°C (Note 2)
P
D
93.75
0.625
2.88
1.5
W
W/°C
W
W
Operating and Storage Temperature Range T
J
, T
stg
-55 to
+175
°C
Single Pulse Drain-to-Source Avalanche
Energy - Starting T
J
= 25°C (Note 3)
(V
DD
= 50 Vdc, V
GS
= 5 Vdc, L = 1.0 mH,
I
L(pk)
= 25 A, V
DS
= 60 Vdc, R
G
= 25 W)
E
AS
313 mJ
Thermal Resistance
- Junction-to-Case
- Junction-to-Ambient (Note 1)
- Junction-to-Ambient (Note 2)
R
q
JC
R
q
JA
R
q
JA
1.6
52
100
°C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8 in from case for 10 seconds
T
L
260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. When surface mounted to FR4 board using 0.5 in pad size.
2. When surface mounted to FR4 board using minimum recommended pad size.
3. Repetitive rating; pulse width limited by maximum junction temperature.
http://onsemi.com
MARKING DIAGRAMS
& PIN ASSIGNMENTS
Y = Year
WW = Work Week
32N06L = Device Code
G = Pb-Free Package
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
1
Gate
3
Source
2
Drain
4
Drain
DPAK
CASE 369C
(Surface Mount)
STYLE 2
YWW
32N
N06LG
1
2
3
4
YWW
32N
N06LG
1
Gate
3
Source
2
Drain
4
Drain
DPAK
CASE 369D
(Straight Lead)
STYLE 2
1
2
3
4
N-Channel
D
S
G
V
DSS
R
DS(ON)
TYP I
D
MAX
60 V
23.7 mW
32 A
NTD32N06L
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage (Note 4)
(V
GS
= 0 Vdc, I
D
= 250 mAdc)
Temperature Coefficient (Positive)
V
(BR)DSS
60
-
70
62
-
-
Vdc
mV/°C
Zero Gate Voltage Drain Current
(V
DS
= 60 Vdc, V
GS
= 0 Vdc)
(V
DS
= 60 Vdc, V
GS
= 0 Vdc, T
J
= 150°C)
I
DSS
-
-
-
-
1.0
10
mAdc
Gate-Body Leakage Current (V
GS
= ±20 Vdc, V
DS
= 0 Vdc) I
GSS
- - ±100 nAdc
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage (Note 4)
(V
DS
= V
GS
, I
D
= 250 mAdc)
Threshold Temperature Coefficient (Negative)
V
GS(th)
1.0
-
1.7
4.8
2.0
-
Vdc
mV/°C
Static Drain-to-Source On-Resistance (Note 4)
(V
GS
= 5 Vdc, I
D
= 16 Adc)
R
DS(on)
- 23.7 28
mW
Static Drain-to-Source On-Resistance (Note 4)
(V
GS
= 5 Vdc, I
D
= 20 Adc)
(V
GS
= 5 Vdc, I
D
= 32 Adc)
(V
GS
= 5 Vdc, I
D
= 16 Adc, T
J
= 150°C)
V
DS(on)
-
-
-
0.48
0.78
0.61
0.67
-
-
Vdc
Forward Transconductance (Note 4) (V
DS
= 6 Vdc, I
D
= 16 Adc) g
FS
- 27 - mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
DS
= 25 Vdc, V
GS
= 0 Vdc,
f = 1.0 MHz)
C
iss
- 1214 1700
pF
Output Capacitance C
oss
- 343 480
Transfer Capacitance C
rss
- 87 180
SWITCHING CHARACTERISTICS (Note 5)
Turn-On Delay Time
(V
DD
= 30 Vdc, I
D
= 32 Adc,
V
GS
= 5 Vdc,
R
G
= 9.1 W) (Note 4)
t
d(on)
- 12.8 30
ns
Rise Time t
r
- 221 450
Turn-Of f Delay Time t
d(off)
- 37 80
Fall Time t
f
- 128 260
Gate Charge
(V
DS
= 48 Vdc, I
D
= 32 Adc,
V
GS
= 5 Vdc) (Note 4)
Q
T
- 23 50
nC
Q
1
- 4.5 -
Q
2
- 14 -
SOURCE-DRAIN DIODE CHARACTERISTICS
Forward On-Voltage
(I
S
= 20 Adc, V
GS
= 0 Vdc) (Note 4)
(I
S
= 32 Adc, V
GS
= 0 Vdc) (Note 4)
(I
S
= 20 Adc, V
GS
= 0 Vdc, T
J
= 150°C)
V
SD
-
-
-
0.89
0.95
0.74
1.0
-
-
Vdc
Reverse Recovery Time
(I
S
= 32 Adc, V
GS
= 0 Vdc,
dI
S
/dt = 100 A/ms) (Note 4)
t
rr
- 56 -
ns
t
a
- 31 -
t
b
- 25 -
Reverse Recovery Stored Charge Q
RR
- 0.093 -
mC
4. Pulse Test: Pulse Width 300 ms, Duty Cycle 2%.
5. Switching characteristics are independent of operating junction temperatures.
ORDERING INFORMATION
Device Package Shipping
NTD32N06L DPAK 75 Units / Rail
NTD32N06LG DPAK
(Pb-Free)
75 Units / Rail
NTD32N06L-1 DPAK (Straight Lead) 75 Units / Rail
NTD32N06L-1G DPAK (Straight Lead)
(Pb-Free)
75 Units / Rail
NTD32N06LT4 DPAK 2500 Units / Tape & Reel
NTD32N06LT4G DPAK
(Pb-Free)
2500 Units / Tape & Reel
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
NTD32N06L
http://onsemi.com
3
1.8
1.6
1.2
1.4
1
0.8
0.6
100
10
1000
10000
40
20
50
10
30
0
60
0.026
0
50
4
20
21
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
I
D
, DRAIN CURRENT (AMPS)
0
V
GS
, GATE-T O-SOURCE VOLTAGE (VOLTS)
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics
I
D
, DRAIN CURRENT (AMPS)
0
0.042
0.038
0.026
403020
0.03
0.022
0.018
0.014
0.01
10 50 60
Figure 3. On-Resistance vs. Drain Current
I
D
, DRAIN CURRENT (AMPS)
Figure 4. On-Resistance vs. Drain Current
I
D
, DRAIN CURRENT (AMPS)
R
DS(on)
, DRAIN-TO-SOURCE RESISTANCE (W)
R
DS(on)
, DRAIN-TO-SOURCE RESISTANCE (W)
Figure 5. On-Resistance Variation with
Temperature
T
J
, JUNCTION TEMPERATURE (°C)
Figure 6. Drain-to-Source Leakage Current
vs. Voltage
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
R
DS(on)
, DRAIN-TO-SOURCE RESISTANCE
(NORMALIZED)
I
DSS
, LEAKAGE (nA)
60
-50 50250-25 75 125100
1.8 3.4 3.832.6 4.22.2 5
0304020 5010 60
0.01
0.03
0.022
0.018
0.034
0.042
040503020 6010
V
GS
= 10 V
3
10
30
40
V
GS
= 8 V
V
GS
= 6 V
V
GS
= 5 V
V
GS
= 4.5 V
V
GS
= 4 V
V
GS
= 3.5 V
V
GS
= 3 V
V
DS
> = 10 V
T
J
= 25°C
T
J
= -55°C
T
J
= 100°C
4.6
T
J
= 25°C
T
J
= -55°C
T
J
= 100°C
V
GS
= 5 V
V
GS
= 10 V
150 175
V
GS
= 0 V
T
J
= 150°C
T
J
= 100°C
T
J
= 125°C
I
D
= 16 A
V
GS
= 5 V
0.014
0.038
0.034
T
J
= 25°C
T
J
= -55°C
T
J
= 100°C

NTD32N06L-001

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
MOSFET N-CH 60V 32A IPAK
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union