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IR2108STRPBF

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P23
Typical Connection
HALF-BRIDGE DRIVER
Features
•
Floating channel designed for bootstrap operation
Fully operational to +600V
Tolerant to negative transient voltage
dV/dt immune
•
Gate drive supply range from 10 to 20V
•
Undervoltage lockout for both channels
•
3.3V, 5V and 15V input logic compatible
•
Cross-conduction prevention logic
•
Matched propagation delay for both channels
•
High side output in phase with HIN input
•
Low side output out of phase with
LIN
input
•
Logic and power ground +/- 5V offset.
•
Internal 540ns dead-time, and
programmable up to 5us with one
external R
DT
resistor (IR21084)
•
Lower di/dt gate driver for better
noise immunity
•
Available in Lead-Free
IR21084
IR2108
V
CC
V
B
V
S
HO
LOCOM
HIN
LIN
LIN
HIN
up to 600V
TO
LOAD
V
CC
HIN
up to 600V
TO
LOAD
V
CC
V
B
V
S
HO
LO
COM
HIN
DT
V
SS
LIN
V
CC
LIN
V
SS
R
DT
Data Sheet No. PD60161-R
IR2108
(
4
)
(
S
) & (PbF)
www.irf.com 1
(Refer to Lead Assignments for correct pin
configuration). This/These diagram(s) show
electrical connections only. Please refer to our
Application Notes and DesignTips for proper
circuit board layout.
Packages
14-Lead PDIP
IR21084
8-Lead SOIC
IR2108S
8-Lead PDIP
IR2108
14-Lead SOIC
IR21084S
Description
The IR2108(4)(S) are high voltage, high speed
power MOSFET and IGBT drivers with depen-
dent high and low side referenced output
channels. Proprietary HVIC and latch immune
CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS
or LSTTL output, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for
minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or
IGBT in the high side configuration which operates up to 600 volts.
Part
Input
logic
Cross-
conduction
prevention
logic
Dead-Time Ground Pins
2106/2301
COM
21064
HIN/LIN no none
VSS/COM
2108 Internal 540ns COM
21084
HIN/LIN yes
Programmable 0.54~5 µs
VSS/COM
2109/2302 Internal 540ns COM
21094
IN/SD yes
Programmable 0.54~5 µs
VSS/COM
2106/2301//2108//2109/2302/2304 Feature Comparison
2304
HIN/LIN
yes
Internal 100ns
COM
2 www.irf.com
IR2108
(
4
)
(
S
) & (PbF)
Symbol Definition Min. Max. Units
V
B
High side floating absolute voltage -0.3 625
V
S
High side floating supply offset voltage V
B
- 25 V
B
+ 0.3
V
HO
High side floating output voltage V
S
- 0.3 V
B
+ 0.3
V
CC
Low side and logic fixed supply voltage -0.3 25
V
LO
Low side output voltage -0.3 V
CC
+ 0.3
DT Programmable dead-time pin voltage (IR21084 only) V
SS
- 0.3 V
CC
+ 0.3
V
IN
Logic input voltage (HIN & LIN)V
SS
- 0.3 V
CC
+ 0.3
V
SS
Logic ground (IR21084 only) V
CC
- 25 V
CC
+ 0.3
dV
S
/dt Allowable offset supply voltage transient — 50 V/ns
P
D
Package power dissipation @ T
A
≤ +25°C (8 lead PDIP) — 1.0
(8 lead SOIC) — 0.625
(14 lead PDIP) — 1.6
(14 lead SOIC) — 1.0
Rth
JA
Thermal resistance, junction to ambient (8 lead PDIP) — 125
(8 lead SOIC) — 200
(14 lead PDIP) — 75
(14 lead SOIC) — 120
T
J
Junction temperature — 150
T
S
Storage temperature -50 150
T
L
Lead temperature (soldering, 10 seconds) — 300
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage param-
eters are absolute voltages referenced to COM. The thermal resistance and power dissipation ratings are measured
under board mounted and still air conditions.
Note 1: Logic operational for V
S
of -5 to +600V. Logic state held for V
S
of -5V to -V
BS
. (Please refer to the Design Tip
DT97-3 for more details).
V
Recommended Operating Conditions
The Input/Output logic timing diagram is shown in figure 1. For proper operation the device should be used within the
recommended conditions. The V
S
and V
SS
offset rating are tested with all supplies biased at 15V differential.
°C
°C/W
W
VB High side floating supply absolute voltage V
S
+ 10 V
S
+ 20
V
S
High side floating supply offset voltage Note 1 600
V
HO
High side floating output voltage V
S
V
B
V
CC
Low side and logic fixed supply voltage 10 20
V
LO
Low side output voltage 0 V
CC
V
IN
Logic input voltage IR2108 COM V
CC
IR21084 V
SS
V
CC
DT Programmable dead-time pin voltage (IR21084 only) V
SS
V
CC
V
SS
Logic ground (IR21084 only) -5 5
T
A
Ambient temperature -40 125
V
Symbol Definition Min. Max. Units
°C
www.irf.com 3
IR2108
(
4
)
(
S
) & (PbF)
Dynamic Electrical Characteristics
V
BIAS
(V
CC
, V
BS
) = 15V, V
SS
= COM, C
L
= 1000 pF, T
A
= 25°C, DT = VSS unless otherwise specified.
Static Electrical Characteristics
V
BIAS
(V
CC
, V
BS
) = 15V, V
SS
= COM, DT= V
SS
and T
A
= 25°C unless otherwise specified. The V
IL
, V
IH
and I
IN
parameters are referenced to V
SS
/COM and are applicable to the respective input leads: HIN and LIN. The V
O
, I
O
and Ron
parameters are referenced to COM and are applicable to the respective output leads: HO and LO.
Symbol Definition Min. Typ. Max. Units Test Conditions
V
IH
Logic “1” input voltage for HIN & logic “0” for LIN 2.9 — — V
CC
= 10V to 20V
V
IL
Logic “0” input voltage for HIN & logic “1” for LIN — — 0.8 V
CC
= 10V to 20V
V
OH
High level output voltage, V
BIAS
- V
O
— 0.8 1.4 I
O
= 20 mA
V
OL
Low level output voltage, V
O
— 0.3 0.6 I
O
= 20 mA
I
LK
Offset supply leakage current — — 50 V
B
= V
S
= 600V
I
QBS
Quiescent V
BS
supply current 20 75 130 V
IN
= 0V or 5V
I
QCC
Quiescent V
CC
supply current 0.4 1.0 1.6 mA V
IN
= 0V or 5V
RDT=0
I
IN+
Logic “1” input bias current — 5 20 HIN = 5V, LIN = 0V
I
IN-
Logic “0” input bias current — — 2 HIN = 0V, LIN = 5V
V
CCUV+
V
CC
and V
BS
supply undervoltage positive going 8.0 8.9 9.8
V
BSUV+
threshold
V
CCUV-
V
CC
and V
BS
supply undervoltage negative going 7.4 8.2 9.0
V
BSUV-
threshold
V
CCUVH
Hysteresis 0.3 0.7 —
V
BSUVH
I
O+
Output high short circuit pulsed current 120 200 — V
O
= 0V,
PW ≤ 10 µs
I
O-
Output low short circuit pulsed current 250 350 — V
O
= 15V,
PW ≤ 10 µs
V
µA
µA
V
mA
Symbol Definition Min. Typ. Max. Units Test Conditions
t
on
Turn-on propagation delay — 220 300 V
S
= 0V
t
off
Turn-off propagation delay — 200 280 V
S
= 0V or 600V
MT Delay matching
|
t
on
- t
off
|
—0 30
t
r
Turn-on rise time — 150 220 V
S
= 0V
t
f
Turn-off fall time — 50 80 V
S
= 0V
DT Deadtime: LO turn-off to HO turn-on(DT
LO-HO) &
400 540 680 RDT= 0
HO turn-off to LO turn-on (DT
HO-LO)
4 5 6 usec RDT = 200k (IR21084)
MDT Deadtime matching =
|
DT
LO-HO
- DT
HO-LO
|
— 0 60 RDT=0
— 0 600 RDT = 200k (IR21084)
nsec
nsec
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P23

IR2108STRPBF

Mfr. #:
Buy IR2108STRPBF
Manufacturer:
Infineon / IR
Description:
Gate Drivers HALF BRDG DRVR 600V 10 to 20V
Lifecycle:
New from this manufacturer.
Delivery:
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