OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

BYV25G-600,127

P1-P3P4-P6P7-P9P10-P12
BYV25G-600_1 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 01 — 4 February 2010 3 of 11
NXP Semiconductors
BYV25G-600
Ultrafast rectifier diode
Fig 1. Forward power dissipation as a function of
average forward current; square waveform;
maximum values
Fig 2. Forward power dissipation as a function of
average forward current; sinusoidal waveform;
maximum values
003aac347
0
2
4
6
8
10
02468
(W)
δ = 1
0.5
0.2
0.1
P
tot
I
F(AV)
(A)
003aac348
0
2
4
6
8
0246
(W)
a = 1.57
1.9
2.2
2.8
4.0
I
F(AV)
(A)
P
tot
BYV25G-600_1 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 01 — 4 February 2010 4 of 11
NXP Semiconductors
BYV25G-600
Ultrafast rectifier diode
5. Thermal characteristics
Table 5. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-mb)
thermal resistance from junction to
mounting base
with heatsink compound;
see Figure 3
--2.5K/W
R
th(j-a)
thermal resistance from junction to
ambient free air
-60-K/W
Fig 3. Transient thermal impedance from junction to mounting base as a function of pulse width
001aag913
1
10
−1
10
Z
th(j-mb)
(K/W)
10
−3
10
−2
t
p
(s)
10
−6
10110
−1
10
−5
10
−3
10
−2
10
−4
t
p
t
p
T
P
t
T
δ =
BYV25G-600_1 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 01 — 4 February 2010 5 of 11
NXP Semiconductors
BYV25G-600
Ultrafast rectifier diode
6. Characteristics
Table 6. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
V
F
forward voltage I
F
= 5 A; see Figure 4 - 1.12 1.3 V
I
F
=5A; T
mb
≤ 150 °C; see Figure 4 - 0.97 1.11 V
I
R
reverse current V
R
=600V; T
j
= 100 °C - 0.1 0.35 mA
V
R
=600V - 2 50 µA
Dynamic characteristics
Q
r
recovered charge I
F
=2A; V
R
≥ 30 V; dI
F
/dt = 20 A/µs;
see Figure 5
-4070nC
t
rr
reverse recovery time I
F
=1A; V
R
≥ 30 V; dI
F
/dt = 100 A/µs;
T
j
=25°C; see Figure 5
-5060ns
V
FR
forward recovery
voltage
I
F
=10A; dI
F
/dt = 10 A/µs; see Figure 6 -3.2-V
I
RM
peak reverse recovery
current
I
F
=10A; V
R
≤ 30 V; dI
F
/dt = 50 A/µs;
T
j
= 100 °C; see Figure 5
-35.5A
Fig 4. Forward current as a function of forward
voltage
Fig 5. Reverse recovery definitions; ramp recovery
003aac232
0
5
10
15
0 0.4 0.8 1.2 1.6
V
F
(V)
I
F
(A)
(1) (2) (3)
003aac562
t
rr
time
100 %
25 %
I
F
dl
F
dt
I
R
I
RM
Q
r
P1-P3P4-P6P7-P9P10-P12

BYV25G-600,127

Mfr. #:
Buy BYV25G-600,127
Manufacturer:
WeEn Semiconductors
Description:
Rectifiers 600V 5A 3-Pin(3+Tab) Diode Ultra Rectifie
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet