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DMG1016VQ-13

P1-P3P4-P6P7-P9
DMG1016VQ
Document number: DS37972 Rev. 2 - 2
4 of 9
www.diodes.com
September 2015
© Diodes Incorporated
DMG1016VQ
NEW PROD UCT
ADVA N C ED I N F ORM ATI O N
Typical Characteristics (Q1 N-Channel)
0
0.2
0.4
0.6
0.8
1.0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
Fig. 1 Typical Output Characteristic
V , DRAIN-SOURCE VOLTAGE (V)
DS
I , DRAIN CURRENT (A)
D
V = 1.5V
GS
V = 2.0V
GS
V = 2.5V
GS
V = 3.0V
GS
V = 1.2V
GS
V = 4.5V
GS
V = 8.0V
GS
0
0.2
0.4
0.6
0.8
1.0
0 0.5 1 1.5 2
Fig. 2 Typical Transfer Characteristic
V , GATE-SOURCE VOLTAGE (V)
GS
I , DRAIN CURRENT (A)
D
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0 0.2 0.4 0.6 0.8 1.0
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
I , DRAIN-SOURCE CURRENT (A)
D
R , DRAIN-SOURCE ON-RESISTANCE ( )
DS(ON)
V = 4.5V
GS
V = 2.5V
GS
V = 1.8V
GS
0
0.1
0.2
0.3
0.4
0.5
0 0.2 0.4 0.6 0.8 1.0
I , DRAIN CURRENT (A)
D
Fig. 4 Typical On-Resistance
vs. Drain Current and Temperature
R , DRAIN-SOURCE ON-RESISTANCE ( )
DS(ON)
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
0.5
0.7
0.9
1.1
1.3
1.5
1.7
Fig. 5 On-Resistance Variation with Temperature
-50 -25 0
V = 2.5V
I = 250mA
GS
D
25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
A
R , DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
DSON
V = 4.5V
I = 500mA
GS
D
0
0.2
0.4
0.6
0.8
Fig. 6 On-Resistance Variation with Temperature
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
A
R , DRAIN-SOURCE
ON-RESISTANCE ( )
DSON
V = 4.5V
I = 500mA
GS
D
V = 2.5V
I = 250mA
GS
D
DMG1016VQ
Document number: DS37972 Rev. 2 - 2
5 of 9
www.diodes.com
September 2015
© Diodes Incorporated
DMG1016VQ
NEW PROD UCT
ADVA N C ED I N F ORM ATI O N
Typical Characteristics (Q1 N-Channel) (Continued)
0
0.4
0.8
1.2
1.6
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
A
V , GATE THRESHOLD VOLTAGE (V)
GS(TH)
I = 1mA
D
I = 250µA
D
0
0.2
0.4
0.6
0.8
1.0
0.2 0.4 0.6 0.8 1.0 1.2
Fig. 8 Diode Forward Voltage vs. Current
V , SOURCE-DRAIN VOLTAGE (V)
SD
I , SOURCE CURRENT (A)
S
T = 25°C
A
1
10
100
0 20
Fig. 9 Typical Total Capacitance
V , DRAIN-SOURCE VOLTAGE (V)
DS
5 1510
C, CAPACITANCE (pF)
C
iss
C
rss
C
oss
1
10
100
1,000
0 4 8 12 16 20
Fig. 10 Typical Leakage Current vs. Drain-Source Voltage
V , DRAIN-SOURCE VOLTAGE (V)
DS
I , LEAKAGE CURRENT (nA)
DSS
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000
Fig. 11 Transient Thermal Response
t , PULSE DURATION TIME (s)
1
0.001
0.01
0.1
1
r(t), TRANSIENT THERMAL RESISTANCE
T - T = P * R (t)
Duty Cycle, D = t /t
J A JA
12
R (t) = r(t) *
JA
R
R = 260°C/W
JA
JA
P(pk)
t
1
t
2
D = 0.7
D = 0.3
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
D = Single Pulse
D = 0.9
D = 0.5
DMG1016VQ
Document number: DS37972 Rev. 2 - 2
6 of 9
www.diodes.com
September 2015
© Diodes Incorporated
DMG1016VQ
NEW PROD UCT
ADVA N C ED I N F ORM ATI O N
Typical Characteristics (Q2 P-Channel)
0
0.2
0.4
0.6
0.8
1.0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5
Fig. 12 Typical Output Characteristic
-V , DRAIN-SOURCE VOLTAGE (V)
DS
V = -2.0V
GS
V = -4.5V
GS
V = -3.0V
GS
V = -1.5V
GS
V = -8.0V
GS
V = -2.5V
GS
0
0.2
0.4
0.6
0.8
1.0
0 0.5 1.0 1.5 2.0 2.5 3.0
Fig. 13 Typical Transfer Characteristic
-V , GATE-SOURCE VOLTAGE (V)
GS
-I , DRAIN CURRENT (A)
D
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
V = -5V
DS
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0 0.2 0.4 0.6 0.8 1.0
Fig. 14 Typical On-Resistance
vs. Drain Current and Gate Voltage
-I , DRAIN-SOURCE CURRENT (A)
D
R , DRAIN-SOURCE ON-RESISTANCE ( )
DS(ON)
V = -4.5V
GS
V = -2.5V
GS
V = -1.8V
GS
0
0.2
0.4
0.6
0.8
1.0
0 0.2 0.4 0.6 0.8 1.0
-I , DRAIN CURRENT (A)
D
Fig. 15 Typical On-Resistance
vs. Drain Current and Temperature
R , DRAIN-SOURCE ON-RESISTANCE ( )
DS(ON)
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
V = -4.5V
GS
0.5
0.7
0.9
1.1
1.3
1.5
1.7
Fig. 16 On-Resistance Variation with Temperature
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
A
R , DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
DSON
V = -4.5V
I = -500mA
GS
D
V = -2.5V
I = -250mA
GS
D
0
0.2
0.4
0.6
0.8
1.0
Fig. 17 On-Resistance Variation with Temperature
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
A
R , DRAIN-SOURCE ON-RESISTANCE ( )
DSON
V = -4.5V
I = -500mA
GS
D
V = -2.5V
I = -250mA
GS
D
P1-P3P4-P6P7-P9

DMG1016VQ-13

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Manufacturer:
Diodes Incorporated
Description:
MOSFET Comp Pair Enh FET 20Vdss 6Vgss
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