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MMBFJ177LT1G

P1-P3
© Semiconductor Components Industries, LLC, 1994
October, 2016 − Rev. 8
1 Publication Order Number:
MMBFJ177LT1/D
MMBFJ177LT1G,
SMMBFJ177LT1G
JFET Chopper
P−Channel − Depletion
Features
• S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating Symbol Value Unit
Drain−Gate Voltage V
DG
−25 Vdc
Gate−Source Voltage V
GS
25 Vdc
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Total Device Dissipation FR−5 Board
(Note 1)
T
A
= 25°C
Derate above 25°C
P
D
225
1.8
mW
mW/°C
Thermal Resistance,
Junction−to−Ambient
R
q
JA
556 °C/W
Junction and Storage Temperature T
J
, T
stg
−55 to +150 °C
1. FR−5 = 1.0 0.75 0.062 in.
MARKING DIAGRAM
SOT−23 (TO−236)
CASE 318−08
STYLE 10
2 SOURCE
3
GATE
1 DRAIN
1
2
3
Device Package Shipping
†
ORDERING INFORMATION
MMBFJ177LT1G SOT−23
(Pb−Free)
3000 / Tape &
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
1
6Y MG
G
6Y = Specific Device Code
M = Date Code*
G = Pb−Free Package
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
(Note: Microdot may be in either location)
SMMBFJ177LT1G SOT−23
(Pb−Free)
3000 / Tape &
Reel
www.onsemi.com
MMBFJ177LT1G, SMMBFJ177LT1G
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Max Unit
OFF CHARACTERISTICS
Gate−Source Breakdown Voltage (V
DS
= 0, I
D
= 1.0 mAdc)
V
(BR)GSS
30 − Vdc
Gate Reverse Current (V
DS
= 0 Vdc, V
GS
= 20 Vdc) I
GSS
− 1.0 nAdc
Gate Source Cutoff Voltage (V
DS
= −15 Vdc, I
D
= −10 nAdc) V
GS(off)
0.8 2.5 Vdc
ON CHARACTERISTICS
Zero−Gate−Voltage Drain Current (V
GS
= 0, V
DS
= −15 Vdc) (Note 2) I
DSS
−1.5 −20 mAdc
Drain Cutoff Current (V
DS
= −15 Vdc, V
GS
= 10 Vdc) I
D(off)
− −1.0 nAdc
Drain Source On Resistance (I
D
= −500 mAdc)
r
DS(on)
− 300
W
Input Capacitance
V
DS
= 0, V
GS
= 10 Vdc
f = 1.0 MHz
C
iss
− 11
pF
Reverse Transfer Capacitance C
rss
− 5.5
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width < 300 ms, Duty Cycle ≤ 2%.
TYPICAL CHARACTERISTICS
Figure 1. Drain Current vs. Drain−Source
Voltage
Figure 2. Reverse Transfer Capacitance
V
DS
, DRAIN−SOURCE VOLTAGE (V) V
DS
, DRAIN−SOURCE VOLTAGE (V)
−12−10−8−6−4−20
0
−1
−2
−3
−4
−6
−7
−8
−25−20−15−10−50
0
4
6
10
12
14
Figure 3. Input Capacitance
V
DS
, DRAIN−SOURCE VOLTAGE (V)
−25−20−15−10−50
0
8
12
20
24
32
I
D
, DRAIN CURRENT (mA)
C
rss
, REVERSE TRANSFER
CAPACITANCE (pF)
C
iss
, INPUT CAPACITANCE (pF)
−5
VGS = 0 V
VGS = 0.9 V
VGS = 0.7 V
VGS = 0.5 V
VGS = 0.3 V
VGS = 0.1 V
2
8
4
16
28
V
GS
= 0 V
f = 1 MHz
V
GS
= 0 V
f = 1 MHz
MMBFJ177LT1G, SMMBFJ177LT1G
www.onsemi.com
3
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AR
D
A1
3
1
2
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
SOLDERING FOOTPRINT*
VIEW C
L
0.25
L1
e
E
E
b
A
SEE VIEW C
DIM
A
MIN NOM MAX MIN
MILLIMETERS
0.89 1.00 1.11 0.035
INCHES
A1 0.01 0.06 0.10 0.000
b 0.37 0.44 0.50 0.015
c 0.08 0.14 0.20 0.003
D 2.80 2.90 3.04 0.110
E 1.20 1.30 1.40 0.047
e 1.78 1.90 2.04 0.070
L 0.30 0.43 0.55 0.012
0.039 0.044
0.002 0.004
0.017 0.020
0.006 0.008
0.114 0.120
0.051 0.055
0.075 0.080
0.017 0.022
NOM MAX
L1
H
2.10 2.40 2.64 0.083 0.094 0.104
H
E
0.35 0.54 0.69 0.014 0.021 0.027
c
0 −−− 10 0 −−− 10
T
°°°°
T
3X
TOP VIEW
SIDE VIEW
END VIEW
2.90
0.80
DIMENSIONS: MILLIMETERS
0.90
PITCH
3X
3X
0.95
RECOMMENDED
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
STYLE 10:
PIN 1. DRAIN
2. SOURCE
3. GATE
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
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may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf
. ON Semiconductor reserves the right to make changes without further notice to any products herein.
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is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of
any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and
do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
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P
UBLICATION ORDERING INFORMATION
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USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
MMBFJ177LT1/D
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◊
P1-P3

MMBFJ177LT1G

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JFET 25V 10mA
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