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BF545C,215
P1-P3
P4-P6
P7-P9
P10-P12
P13-P15
P16-P16
BF545A_BF545B_
BF545C
All information pr
ovided in this d
ocument is subje
ct to legal discl
aimers.
© NXP B.V
. 201
1. All rights rese
r
ved.
Product data sheet
Rev
. 4 — 15 September 201
1
10 of 16
NXP Semiconductors
BF545A; BF545B; BF545C
N-channel silicon junct
ion field-effect trans
istors)
V
DS
= 0 V
; V
GS
=
20 V
.
V
DS
= 15 V
; T
j
= 25
C.
Fig 16.
Ga
te current as a fu
nction of ju
nction
temperature; typical
values.
Fig 17.
Reverse transfer
cap
acitance as a function of
gate-source voltage; typical values.
V
DS
= 15 V
; T
j
= 25
C.
V
DS
= 10 V
; I
D
= 1 mA; T
amb
= 25
C.
(1)
b
is
.
(2)
g
is
.
Fig 18.
T
ypica
l input capacit
ance.
Fig 19.
Common-source input admittance; typical
values.
mbb453
−
1
−
10
−
10
2
−
10
3
I
GSS
(pA)
10
−
1
T
j
(
°
C)
−
50
150
100
05
0
V
GS
(V)
−
10
0
−
2
−
6
−
4
−
8
mbb452
0.4
0.6
0.2
0.8
1
C
rss
(pF)
0
V
GS
(V)
−
10
0
−
2
−
6
−
4
−
8
mbb451
1
2
3
C
iss
(pF)
0
mbb468
f (MHz)
10
10
3
10
2
10
−
1
1
10
10
2
y
is
(mS)
10
−
2
(1)
(2)
BF545A_BF545B_
BF545C
All information pr
ovided in this d
ocument is subje
ct to legal discl
aimers.
© NXP B.V
. 201
1. All rights rese
r
ved.
Product data sheet
Rev
. 4 — 15 September 201
1
1
1 of 16
NXP Semiconductors
BF545A; BF545B; BF545C
N-channel silicon junct
ion field-effect trans
istors)
V
DS
= 10 V
; I
D
= 1 mA; T
amb
= 25
C.
(1)
g
fs
.
(2)
b
fs
.
V
DS
= 10 V
; I
D
= 1 mA; T
amb
= 25
C.
(1)
b
rs
.
(2)
g
rs
.
Fig 20.
Common-source for
ward transfer admittance;
typical valu
es.
Fig 21.
Common-source revers
e transfer admittance;
typical values.
V
DS
= 10 V
; I
D
= 1 mA; T
amb
= 25
C.
(1)
b
os
.
(2)
g
os
.
Fig 22.
Common-s
ource output
admitt
ance; typical values.
mbb469
10
1
10
2
Y
fs
(mS)
10
−
1
f (MHz)
10
10
3
10
2
(2)
(1)
mbb470
f (MHz)
10
10
3
10
2
10
−
2
10
−
1
1
10
y
rs
(mS)
10
−
3
(1)
(2)
mbb471
1
10
−
1
10
y
os
(mS)
10
−
2
f (MHz)
10
10
3
10
2
(1)
(2)
BF545A_BF545B_
BF545C
All information pr
ovided in this d
ocument is subje
ct to legal discl
aimers.
© NXP B.V
. 201
1. All rights rese
r
ved.
Product data sheet
Rev
. 4 — 15 September 201
1
12 of 16
NXP Semiconductors
BF545A; BF545B; BF545C
N-channel silicon junct
ion field-effect trans
istors)
9. Package
outline
Fig 23.
Package
outline.
UNIT
A
1
max.
b
p
cD
E
e
1
H
E
L
p
Qw
v
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
04-11-04
06-03-16
IEC
JEDEC
JEITA
mm
0.1
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
0.95
e
1.9
2.5
2.1
0.55
0.45
0.1
0.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15
SOT23
TO-236AB
b
p
D
e
1
e
A
A
1
L
p
Q
detail X
H
E
E
w
M
v
M
A
B
A
B
0
1
2 mm
scale
A
1.1
0.9
c
X
12
3
Plastic surface-mounted package; 3 leads
SOT23
P1-P3
P4-P6
P7-P9
P10-P12
P13-P15
P16-P16
BF545C,215
Mfr. #:
Buy BF545C,215
Manufacturer:
NXP Semiconductors
Description:
RF JFET Transistors JFET N-CH 30V 10MA
Lifecycle:
New from this manufacturer.
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BF545C,215