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VS-43CTQ100-N3

P1-P3P4-P6P7-P7
VS-43CTQ100PbF, VS-43CTQ100-N3
www.vishay.com
Vishay Semiconductors
Revision: 11-Oct-11
1
Document Number: 94223
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Schottky Rectifier, 2 x 20 A
FEATURES
• 175 °C T
J
operation
• Low forward voltage drop
• High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
• High frequency operation
• Guard ring for enhanced ruggedness and long
term reliability
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified according to JEDEC-JESD47
• Halogen-free according to IEC 61249-2-21 definition
(-N3 only)
DESCRIPTION
This center tap Schottky rectifier series has been optimized
for low reverse leakage at high temperature. The proprietary
barrier technology allows for reliable operation up to 175 °C
junction temperature. Typical applications are in switching
power supplies, converters, freewheeling diodes, and
reverse battery protection.
PRODUCT SUMMARY
Package TO-220AB
I
F(AV)
2 x 20 A
V
R
100 V
V
F
at I
F
0.67 V
I
RM
max. 11 mA at 125 °C
T
J
175 °C
Diode variation Common cathode
E
AS
7.50 mJ
Anode
13
2
Base
common
cathode
2
Common
cathode
Anode
TO-220AB
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
Rectangular waveform 40 A
V
RRM
100 V
I
FSM
t
p
= 5 μs sine 850 A
V
F
20 A
pk
, T
J
= 125 °C (per leg) 0.67 V
T
J
Range - 55 to 175 °C
VOLTAGE RATINGS
PARAMETER SYMBOL VS-43CTQ100PbF VS-43CTQ100-N3 UNITS
Maximum DC reverse voltage V
R
100 100 V
Maximum working peak reverse voltage V
RWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average
forward current
See fig. 5
per leg
I
F(AV)
50 % duty cycle at T
C
= 135 °C, rectangular waveform
20
A
per device 40
Maximum peak one cycle
non-repetitive surge current per leg
See fig. 7
I
FSM
5 μs sine or 3 μs rect. pulse
Following any rated
load condition and
with rated V
RRM
applied
850
10 ms sine or 6 ms rect. pulse 275
Non-repetitive avalanche energy per leg E
AS
T
J
= 25 °C, I
AS
= 0.50 A, L = 60 mH 7.50 mJ
Repetitive avalanche current per leg I
AR
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
0.50 A
VS-43CTQ100PbF, VS-43CTQ100-N3
www.vishay.com
Vishay Semiconductors
Revision: 11-Oct-11
2
Document Number: 94223
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop per leg
See fig. 1
V
FM
(1)
20 A
T
J
= 25 °C
0.81
V
40 A 0.98
20 A
T
J
= 125 °C
0.67
40 A 0.81
Maximum reverse leakage current per leg
See fig. 2
I
RM
(1)
T
J
= 25 °C
V
R
= Rated V
R
1
mA
T
J
= 125 °C 11
Threshold voltage V
F(TO)
T
J
= T
J
maximum
0.71 V
Forward slope resistance r
t
0.43 m:
Maximum junction capacitance per leg C
T
V
R
= 5 V
DC
(test signal range 100 kHz to 1 MHz) 25 °C 1480 pF
Typical series inductance per leg L
S
Measured lead to lead 5 mm from package body 8.0 nH
Maximum voltage rate of change dV/dt Rated V
R
10 000 V/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
temperature range
T
J
, T
Stg
- 55 to 175 °C
Maximum thermal resistance,
junction to case per leg
R
thJC
DC operation
2.0
°C/W
Maximum thermal resistance,
junction to case per package
1.0
Typical thermal resistance,
case to heatsink
R
thCS
Mounting surface, smooth and greased 0.50
Approximate weight
2g
0.07 oz.
Mounting torque
minimum 6 (5)
kgf · cm
(lbf · in)
maximum 12 (10)
Marking device Case style TO-220AB 43CTQ100
VS-43CTQ100PbF, VS-43CTQ100-N3
www.vishay.com
Vishay Semiconductors
Revision: 11-Oct-11
3
Document Number: 94223
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Maximum Forward Voltage Drop Characteristics
(Per Leg)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage (Per Leg)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics (Per Leg)
1
10
0.8
1.2
V
FM
- Forward Voltage Drop (V)
I
F
- Instantaneous Forward Current (A)
100
0.40.2 0.6 1.0 1.4 1.8
1000
1.6
T
J
= 175 °C
T
J
= 125 °C
T
J
= 25 °C
0.1
1
10
100
0.001
0.01
0
V
R
- Reverse Voltage (V)
I
R
- Reverse Current (mA)
80
100
1000
4020 60
T
J
= 150 °C
T
J
= 175 °C
T
J
= 50 °C
T
J
= 100 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 75 °C
10 000
100
V
R
- Reverse Voltage (V)
C
T
- Junction Capacitance (pF)
1000
T
J
= 25 °C
080
100
4020 60
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1
t
1
- Rectangular Pulse Duration (s)
Z
thJC
- Thermal Impedance (°C/W)
1 100
0.01
10
Single pulse
(thermal resistance)
Notes:
1. Duty factor D = t
1
/t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
P
DM
t
1
t
2
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
P1-P3P4-P6P7-P7

VS-43CTQ100-N3

Mfr. #:
Buy VS-43CTQ100-N3
Manufacturer:
Vishay
Description:
Schottky Diodes & Rectifiers 2X20A 100V Common Cathode
Lifecycle:
New from this manufacturer.
Delivery:
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