PRELIMINARY
I
NTEGRATED
C
IRCUITS
D
IVISION
PRELIMINARY
DS-CPC3720-R00G
1
CPC3720
N-Channel Depletion-Mode FET
e
3
Pb
V
(BR)DSX
/
V
(BR)DGX
R
DS(on)
(max)
I
DSS
(min) Package
350V
P
22 130mA SOT-89
Applications
Features
Description
Ordering Information
Package Pinout
• Ignition Modules
• Normally-On Switches
• Solid State Relays
• Converters
• Telecommunications
• Power Supply
• Offers Low R
DS(on)
at Cold Temperatures
• R
DS(on)
22 max. at 25ºC
• High Input Impedance
• High Breakdown Voltage: 350V
P
• Low V
GS(off)
Voltage: -1.6 to -3.9V
• Small Package Size SOT-89
The CPC3720 is an N-channel, depletion mode, field
effect transistor (FET) that utilizes IXYS Integrated
Circuits Division’s proprietary third-generation vertical
DMOS process. The third-generation process realizes
world class, high voltage MOSFET performance
in an economical silicon gate process. Our vertical
DMOS process yields a robust device, with high input
impedance, for use in high power applications. The
CPC3720 is a highly reliable FET device that has
been used extensively in our solid state relays for
industrial and telecommunications applications.
This device excels in power applications requiring
low drain-source resistance, particularly in cold
environments such as automotive ignition modules.
The CPC3720 offers a low, 22 maximum, on-state
resistance at 25ºC.
The CPC3720 has a minimum breakdown voltage
of 350V
P
, and is available in an SOT-89 package.
As with all MOS devices, the FET structure prevents
thermal runaway and thermal-induced secondary
breakdown.
Circuit Symbol
S
G
D
(SOT-89)
G
D
S
D
Part # Description
CPC3720C N-Channel Depletion Mode FET, SOT-89 Pkg.
Cut-Tape, Available in Quantities of 200, 400,
600, and 800 Only (see Note 1)
CPC3720CTR N-Channel Depletion Mode FET, SOT-89 Pkg.
Tape and Reel (1000/Reel)
Note 1: Orders for 1000 or greater must be for the "CTR" part option
and in increments of 1000.