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PMEG2010ET,215

P1-P3P4-P6P7-P9P10-P12
PMEG2010EH_EJ_ET_4 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 04 — 20 March 2007 3 of 11
NXP Semiconductors
PMEG2010EH/EJ/ET
1 A very low V
F
MEGA Schottky barrier rectifiers
5. Limiting values
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm
2
.
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
R
reverse voltage - 20 V
I
F
forward current T
sp
≤ 55 °C-1A
I
FRM
repetitive peak forward
current
t
p
≤ 1 ms; δ≤0.25
PMEG2010EH - 7 A
PMEG2010EJ - 7 A
PMEG2010ET - 5 A
I
FSM
non-repetitive peak forward
current
square wave;
t
p
=8ms
-9A
P
tot
total power dissipation T
amb
≤ 25 °C
PMEG2010EH
[1]
- 375 mW
[2]
- 830 mW
PMEG2010EJ
[1]
- 350 mW
[2]
- 830 mW
PMEG2010ET
[1]
- 280 mW
[2]
- 420 mW
T
j
junction temperature - 150 °C
T
amb
ambient temperature −65 +150 °C
T
stg
storage temperature −65 +150 °C
PMEG2010EH_EJ_ET_4 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 04 — 20 March 2007 4 of 11
NXP Semiconductors
PMEG2010EH/EJ/ET
1 A very low V
F
MEGA Schottky barrier rectifiers
6. Thermal characteristics
[1] For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse
power losses P
R
are a significant part of the total power losses.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm
2
.
[4] Soldering point of cathode tab.
7. Characteristics
[1] Pulse test: t
p
≤ 300 µs; δ≤0.02.
Table 7. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-a)
thermal resistance from
junction to ambient
in free air
[1]
PMEG2010EH
[2]
- - 330 K/W
[3]
- - 150 K/W
PMEG2010EJ
[2]
- - 350 K/W
[3]
- - 150 K/W
PMEG2010ET
[2]
- - 440 K/W
[3]
- - 300 K/W
R
th(j-sp)
thermal resistance from
junction to solder point
[4]
PMEG2010EH - - 60 K/W
PMEG2010EJ - - 55 K/W
PMEG2010ET - - 120 K/W
Table 8. Characteristics
T
amb
=25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
V
F
forward voltage
[1]
I
F
= 0.1 mA - 90 130 mV
I
F
= 1 mA - 150 190 mV
I
F
= 10 mA - 210 240 mV
I
F
= 100 mA - 280 330 mV
I
F
= 500 mA - 355 390 mV
I
F
= 1000 mA - 420 500 mV
I
R
reverse current V
R
=10V - 15 40 µA
V
R
= 20 V - 40 200 µA
C
d
diode capacitance V
R
=1V;
f=1MHz
- 6680pF
PMEG2010EH_EJ_ET_4 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 04 — 20 March 2007 5 of 11
NXP Semiconductors
PMEG2010EH/EJ/ET
1 A very low V
F
MEGA Schottky barrier rectifiers
(1) T
amb
= 150 °C
(2) T
amb
= 125 °C
(3) T
amb
=85°C
(4) T
amb
=25°C
(5) T
amb
= −40 °C
(1) T
amb
= 150 °C
(2) T
amb
= 125 °C
(3) T
amb
=85°C
(4) T
amb
=25°C
(5) T
amb
= −40 °C
Fig 1. Forward current as a function of forward
voltage; typical values
Fig 2. Reverse current as a function of reverse
voltage; typical values
f = 1 MHz; T
amb
=25°C
Fig 3. Diode capacitance as a function of reverse voltage; typical values
006aaa247
1
10
−1
10
2
10
10
3
I
F
(mA)
10
−2
V
F
(V)
0 0.50.40.2 0.30.1
(1) (2)
(3) (4) (5)
006aaa248
I
R
(µA)
1
10
−2
10
−1
10
4
10
3
10
2
10
10
5
10
−3
V
R
(V)
020168124
(1)
(2)
(3)
(4)
(5)
V
R
(V)
020168124
006aaa249
40
80
120
C
d
(pF)
0
P1-P3P4-P6P7-P9P10-P12

PMEG2010ET,215

Mfr. #:
Buy PMEG2010ET,215
Manufacturer:
Nexperia
Description:
Schottky Diodes & Rectifiers SCHOTTKY 20V 1A
Lifecycle:
New from this manufacturer.
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