VESD05A1B-02V
www.vishay.com
Vishay Semiconductors
Rev. 1.2, 15-Jul-15
2
Document Number: 83368
For technical questions, contact: ESDprotection@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BiAs-MODE (bidirectional asymmetrical protection mode)
With the VESD05A1B-02V one signal- or data-lines (L1) can be protected against voltage transients. With pin 1 connected to
ground and pin 2 connected to a signal- or data-line which has to be protected. As long as the voltage level on the data- or
signal-line is between 0 V (ground level) and the specified maximum reverse working voltage (V
RWM
) the protection diode
between data line and ground offers a high isolation to the ground line. The protection device behaves like an open switch.
As soon as any positive transient voltage signal exceeds the break through voltage level of the protection diode, the diode
becomes conductive and shorts the transient current to ground. Now the protection device behaves like a closed switch. The
clamping voltage (V
C
) is defined by the breakthrough voltage (V
BR
) level plus the voltage drop at the series impedance
(resistance and inductance) of the protection device.
Any negative transient signal will be clamped accordingly. The negative transient current is flowing in the forward direction of
the protection diode. The low forward voltage (V
F
) clamps the negative transient close to the ground level.
Due to the different clamping levels in forward and reverse direction the VESD05A1B-02V clamping behaviour is bidirectional
and asymmetrical (BiAs).
ELECTRICAL CHARACTERISTICS VESD05A1B-02V
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT
Protection paths Number of lines which can be protected N
channel
- - 1 lines
Reverse stand off voltage Max. reverse working voltage V
RWM
--5V
Reverse voltage at I
R
= 0.1 μA V
R
5--V
Reverse current at V
R
= 5 V I
R
- 0.01 0.1 μA
Reverse breakdown voltage at I
R
= 1 mA V
BR
66.87.5V
Reverse clamping voltage
at I
PP
= 1 A V
C
-89.5V
at I
PP
= I
PPM
= 3 A V
C
-8.911V
Forward clamping voltage
at I
PP
= 0.2 A V
F
- 0.95 1.2 V
at I
PP
= 1 A V
F
-1.3- V
at I
PP
= I
PPM
= 3 A V
F
-1.9- V
Capacitance
at V
R
= 0 V; f = 1 MHz C
D
-1923pF
at V
R
= 2.5 V; f = 1 MHz C
D
-12-pF
L1
20280
1
2
Ground
BiAs
