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PMN70EPEX

P1-P3P4-P6P7-P9P10-P12P13-P15
Nexperia
PMN70EPE
30 V, P-channel Trench MOSFET
PMN70EPE All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet 23 May 2017 4 / 15
aaa-026718
V
DS
(V)
10
-1
10
2
101
10
2
I
D
(A)
10
-2
10
-1
1
10
DC; T
sp
= 25 °C
DC; T
amb
= 25 °C; 6 cm
2
t
p
= 10 µs
100 µs
1 ms
10 ms
100 ms
Fig. 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-
source voltage
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
[1] - 190 220 K/Win free air
[2] - 78 90 K/W
R
th(j-a)
thermal resistance
from junction to
ambient
in free air; t ≤ 5 s [2] - 47 54 K/W
R
th(j-sp)
thermal resistance
from junction to solder
point
- 15 20 K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm
2
.
Nexperia
PMN70EPE
30 V, P-channel Trench MOSFET
PMN70EPE All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet 23 May 2017 5 / 15
aaa-026719
t
p
(s)
10
-3
10
3
10
2
10110
-1
10
-2
10
3
Z
th(j-a)
(K/W)
1
10
10
2
duty cycle = 1
0.05
0.1
0.2
0.25
0.33
0.5
0.75
0.02
0.01
0
FR4 PCB, standard footprint
Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
aaa-026720
t
p
(s)
10
-3
10
3
10
2
10110
-1
10
-2
10
2
10
Z
th(j-a)
(K/W)
1
duty cycle = 1
0.02
0.01
0
0.75
0.5
0.33
0.25
0.1
0.05
0.2
FR4 PCB, mounting pad for drain 6 cm
2
Fig. 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
Nexperia
PMN70EPE
30 V, P-channel Trench MOSFET
PMN70EPE All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet 23 May 2017 6 / 15
10. Characteristics
Table 7. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
V
(BR)DSS
drain-source
breakdown voltage
I
D
= -250 µA; V
GS
= 0 V; T
j
= 25 °C -30 - - V
V
GSth
gate-source threshold
voltage
I
D
= -250 µA; V
DS
=V
GS
; T
j
= 25 °C -1 -2 -3 V
I
DSS
drain leakage current V
DS
= -30 V; V
GS
= 0 V; T
j
= 25 °C - - -1 µA
V
GS
= 20 V; V
DS
= 0 V; T
j
= 25 °C - - 10 µA
V
GS
= -20 V; V
DS
= 0 V; T
j
= 25 °C - - -10 µA
V
GS
= 10 V; V
DS
= 0 V; T
j
= 25 °C - - 1 µA
V
GS
= -10 V; V
DS
= 0 V; T
j
= 25 °C - - -1 µA
V
GS
= 4.5 V; V
DS
= 0 V; T
j
= 25 °C - - 100 nA
I
GSS
gate leakage current
V
GS
= -4.5 V; V
DS
= 0 V; T
j
= 25 °C - - -100 nA
V
GS
= -10 V; I
D
= -3.3 A; T
j
= 25 °C - 60 80 mΩ
V
GS
= -10 V; I
D
= -3.3 A; T
j
= 150 °C - 91 121 mΩ
R
DSon
drain-source on-state
resistance
V
GS
= -4.5 V; I
D
= -2.6 A; T
j
= 25 °C - 96 140 mΩ
g
fs
forward
transconductance
V
DS
= -10 V; I
D
= -2 A; T
j
= 25 °C - 12.6 - S
R
G
gate resistance f = 1 MHz; T
j
= 25 °C - 12 - Ω
Dynamic characteristics
Q
G(tot)
total gate charge - 6.5 11.5 nC
Q
GS
gate-source charge - 1.2 - nC
Q
GD
gate-drain charge
V
DS
= -15 V; I
D
= -3.3 A; V
GS
= -10 V;
T
j
= 25 °C
- 1.2 - nC
C
iss
input capacitance - 370 - pF
C
oss
output capacitance - 64 - pF
C
rss
reverse transfer
capacitance
V
DS
= -15 V; f = 1 MHz; V
GS
= 0 V;
T
j
= 25 °C
- 44 - pF
t
d(on)
turn-on delay time - 5 - ns
t
r
rise time - 8 - ns
t
d(off)
turn-off delay time - 19 - ns
t
f
fall time
V
DS
= -15 V; I
D
= -3.3 A; V
GS
= -10 V;
R
G(ext)
= 6 Ω; T
j
= 25 °C
- 7.5 - ns
Source-drain diode
V
SD
source-drain voltage I
S
= -1.4 A; V
GS
= 0 V; T
j
= 25 °C - -0.8 -1.2 V
P1-P3P4-P6P7-P9P10-P12P13-P15

PMN70EPEX

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Manufacturer:
Nexperia
Description:
MOSFET 30 V, P-channel Trench MOSFET
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New from this manufacturer.
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