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VS-60EPS16-M3

P1-P3P4-P6P7-P8
VS-60EPS16PbF, VS-60EPS16-M3
www.vishay.com
Vishay Semiconductors
Revision: 12-Feb-16
1
Document Number: 94346
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
High Voltage Input Rectifier Diode, 60 A
FEATURES
• Very low forward voltage drop
• 150 °C max. operating junction temperature
• Glass passivated pellet chip junction
• Designed and qualified according to
JEDEC
®
-JESD 47
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• Input rectification
• Vishay Semiconductors switches and output rectifiers
which are available in identical package outlines
DESCRIPTION
High voltage rectifiers optimized for very low forward
voltage drop with moderate leakage.
These devices are intended for use in main rectification
(single or three phase bridge).
PRODUCT SUMMARY
Package TO-247AC modified (2 pins)
I
F(AV)
60 A
V
R
1600 V
V
F
at I
F
1.15 V
I
FSM
950 A
T
J
max. 150 °C
Diode variation Single die
Base
cathode
2
13
Anode
Cathode
1
2
3
TO-247AC modified
Available
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
Sinusoidal waveform 60 A
V
RRM
1600 V
I
FSM
950 A
V
F
60 A, T
J
= 25 °C 1.15 V
T
J
-40 to +150 °C
VOLTAGE RATINGS
PART NUMBER
V
RRM
, MAXIMUM
PEAK REVERSE VOLTAGE
V
V
RSM
, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
I
RRM
AT 150 °C
mA
VS-60EPS16PbF
1600 1700 1
VS-60EPS16-M3
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current I
F(AV)
T
C
= 118 °C, 180° conduction half sine wave 60
A
Maximum peak one cycle
non-repetitive surge current
I
FSM
10 ms sine pulse, rated V
RRM
applied 800
10 ms sine pulse, no voltage reapplied 950
Maximum I
2
t for fusing I
2
t
10 ms sine pulse, rated V
RRM
applied 3200
A
2
s
10 ms sine pulse, no voltage reapplied 4525
Maximum I
2
t for fusing I
2
t t = 0.1 ms to 10 ms, no voltage reapplied 45 250 A
2
s
VS-60EPS16PbF, VS-60EPS16-M3
www.vishay.com
Vishay Semiconductors
Revision: 12-Feb-16
2
Document Number: 94346
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop V
FM
30 A, T
J
= 25 °C 1.0
V
60 A, T
J
= 25 °C 1.15
Forward slope resistance r
t
T
J
= 150 °C
3.96 m
Threshold voltage V
F(TO)
0.74 V
Maximum reverse leakage current I
RM
T
J
= 25 °C
V
R
= Rated V
RRM
0.1
mA
T
J
= 150 °C 1.0
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage temperature range T
J
, T
Stg
-40 to +150 °C
Maximum thermal resistance,
junction to case
R
thJC
DC operation 0.35
°C/W
Maximum thermal resistance,
junction to ambient
R
thJA
40
Typical thermal resistance,
case to heatsink
R
thCS
Mounting surface, smooth and greased 0.2
Approximate weight
6g
0.21 oz.
Mounting torque
minimum 6.0 (5)
kgf · cm
(lbf · in)
maximum 12 (10)
Marking device Case style TO-247AC modified (JEDEC) 60EPS16
VS-60EPS16PbF, VS-60EPS16-M3
www.vishay.com
Vishay Semiconductors
Revision: 12-Feb-16
3
Document Number: 94346
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Current Rating Characteristics
Fig. 2 - Current Rating Characteristics
Fig. 3 - Forward Power Loss Characteristics
Fig. 4 - Forward Power Loss Characteristics
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
140
150
130
120
110
100
Maximum Allowable Case
Temperature (°C)
Average Forward Current (A)
10 20
60
70
30 40 50
0
30°
60°
90°
120°
180°
VS-60EPS.. Series
R
thJC
(DC) = 0.35 K/W
Conduction angle
Ø
110
120
130
140
150
Maximum Allowable Case
Temperature (°C)
Average Forward Current (A)
20 40 60
100
80
0
DC
30°
60°
90°
120°
180°
VS-60EPS.. Series
R
thJC
(DC) = 0.35 K/W
Ø
Conduction period
0
10
20
30
40
50
60
70
80
90
Maximum Average Forward
Power Loss (W)
Average Forward Current (A)
2010 30 40 50 60
70
0
RMS limit
180°
120°
90°
60°
30°
VS-60EPS.. Series
T
J
= 150 °C
Conduction angle
Ø
0
90
80
70
60
50
40
30
20
10
100
110
Maximum Average Forward
Power Loss (W)
Average Forward Current (A)
20
80
100
40 60
0
DC
180°
120°
90°
60°
30°
RMS limit
VS-60EPS.. Series
T
J
= 150 °C
Ø
Conduction period
Peak Half Sine Wave
Forward Current (A)
Number of Equal Amplitude
Half Cycle Current Pulse (N)
110100
200
300
400
500
600
700
800
900
VS-60EPS.. Series
At any rated load condition and with
rated V
rrm
applied following surge.
Initial T
J
= 150 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
Peak Half Sine Wave
Forward Current (A)
Pulse Train Duration (s)
0.01 0.1 1 10
100
200
300
400
500
600
700
800
900
1000
VS-60EPS.. Series
Maximum non-repetitive surge current
versus pulse train duration.
Initial T
J
= 150 °C
No voltage reapplied
Rated V
rrm
reapplied
P1-P3P4-P6P7-P8

VS-60EPS16-M3

Mfr. #:
Buy VS-60EPS16-M3
Manufacturer:
Vishay Semiconductors
Description:
Rectifiers New Input Diodes - TO-247-e3
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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