050-8161 Rev D 8-2011
Static Characteristics T
J
= 25°C unless otherwise specifi ed
Source-Drain Diode Characteristics
Dynamic Characteristics T
J
= 25°C unless otherwise specifi ed
1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature.
2 Starting at T
J
= 25°C, L = 6.9mH, R
G
= 25, I
AS
= 24A.
3 Pulse test: Pulse Width < 380s, duty cycle < 2%.
4 C
o(cr)
is defi ned as a fi xed capacitance with the same stored charge as C
OSS
with V
DS
= 67% of V
(BR)DSS
.
5 C
o(er)
is defi ned as a fi xed capacitance with the same stored energy as C
OSS
with V
DS
= 67% of V
(BR)DSS
. To calculate C
o(er)
for any value of
V
DS
less than V
(BR)DSS,
use this equation: C
o(er)
= -8.32E-8/V
DS
^2 + 3.49E-8/V
DS
+ 1.30E-10.
6 R
G
is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452)
Microsemi reserves the right to change, without notice, the specifi cations and information contained herein.
APT44F80B2_L
Symbol Parameter Test Conditions Min Typ Max Unit
V
BR(DSS)
Drain-Source Breakdown Voltage
V
GS
= 0V, I
D
= 250A 800 V
V
BR(DSS)
/T
J
Breakdown Voltage Temperature Coeffi cient
Reference to 25°C, I
D
= 250A
0.87 V/°C
R
DS(on)
Drain-Source On Resistance
3
V
GS
= 10V, I
D
= 24A 0.17 0.21
V
GS(th)
Gate-Source Threshold Voltage
V
GS
= V
DS
, I
D
= 2.5mA
2.5 4 5 V
V
GS(th)
/T
J
Threshold Voltage Temperature Coeffi cient
-10 mV/°C
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 800V
V
GS
= 0V
T
J
= 25°C 250
A
T
J
= 125°C 1000
I
GSS
Gate-Source Leakage Current
V
GS
= ±30V ±100
nA
Symbol Parameter Test Conditions Min Typ Max Unit
g
fs
Forward Transconductance V
DS
= 50V, I
D
= 24A
43
S
C
iss
Input Capacitance
V
GS
= 0V, V
DS
= 25V
f = 1MHz
9330
pF
C
rss
Reverse Transfer Capacitance 160
C
oss
Output Capacitance 930
C
o(cr)
4
Effective Output Capacitance, Charge Related
V
GS
= 0V, V
DS
= 0V to 533V
440
C
o(er)
5
Effective Output Capacitance, Energy Related 220
Q
g
Total Gate Charge
V
GS
= 0 to 10V, I
D
= 24A,
V
DS
= 400V
305
nC
Q
gs
Gate-Source Charge 51
Q
gd
Gate-Drain Charge 155
t
d(on)
Turn-On Delay Time
Resistive Switching
V
DD
= 400V, I
D
= 24A
R
G
= 4.7
6
, V
GG
= 15V
55
ns
t
r
Current Rise Time 75
t
d(off)
Turn-Off Delay Time 230
t
f
Current Fall Time 70
Symbol Parameter Min Typ Max Unit
I
S
Continuous Source Current (Body Diode) 47
A
I
SM
Pulsed Source Current (Body Diode)
1
173
V
SD
Diode Forward Voltage
I
SD
= 24A, T
J
= 25°C, V
GS
= 0V 1.2 V
t
rr
Reverse Recovery Time
I
SD
= 24A
3
di
SD
/dt = 100A/s
V
DD
= 100V
T
J
= 25°C 320 370
nS
T
J
= 125°C 590 710
Q
rr
Reverse Recovery Charge
T
J
= 25°C 1.91
C
T
J
= 125°C 5.18
I
rrm
Reverse Recovery Current
T
J
= 25°C 12.1
A
T
J
= 125°C 18.1
dv/dt Peak Recovery dv/dt
I
SD
24A, di/dt 1000A/s, V
DD
= 400V,
T
J
= 125°C
25 V/ns
Test Conditions
MOSFET symbol
showing the integral
reverse p-n junction
diode (body diode)
