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MMBT5089LT1G

P1-P3P4-P5
© Semiconductor Components Industries, LLC, 1994
October, 2016 − Rev. 6
1 Publication Order Number:
MMBT5088LT1/D
MMBT5088L, MMBT5089L
Low Noise Transistors
NPN Silicon
Features
• S and NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage
MMBT5088L
MMBT5089L
V
CEO
30
25
Vdc
Collector−Base Voltage
MMBT5088L
MMBT5089L
V
CBO
35
30
Vdc
Emitter−Base Voltage V
EBO
4.5 Vdc
Collector Current − Continuous I
C
50 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR−5 Board,
(Note 1) T
A
= 25°C
Derate above 25°C
P
D
225
1.8
mW
mW/°C
Thermal Resistance, Junction−to−Ambient
R
q
JA
556 °C/W
Total Device Dissipation Alumina
Substrate, (Note 2) T
A
= 25°C
Derate above 25°C
P
D
300
2.4
mW
mW/°C
Thermal Resistance, Junction−to−Ambient
R
q
JA
417 °C/W
Junction and Storage Temperature T
J
, T
stg
−55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
SOT−23 (TO−236)
CASE 318
STYLE 6
COLLECTOR
3
1
BASE
2
EMITTER
Device Package Shipping
†
ORDERING INFORMATION
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
MMBT5088LT1G,
SMMBT5088LT1G
SOT−23
(Pb−Free)
3,000 / Tape &
Reel
MMBT5089LT1G,
SMMBT5089LT1G
SOT−23
(Pb−Free)
3,000 / Tape &
Reel
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
1
1x M G
G
1x = Device Code
x = Q for MMBT5088L
SMMBT5088L
x = R for MMBT5089L
SMMBT5089L
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
MARKING DIAGRAM
NSVMMBT5088LT3G SOT−23
(Pb−Free)
10,000 / Tape &
Reel
www.onsemi.com
MMBT5088L, MMBT5089L
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage
(I
C
= 1.0 mAdc, I
B
= 0) MMBT5088L
MMBT5089L
V
(BR)CEO
30
25
−
−
Vdc
Collector−Base Breakdown Voltage
(I
C
= 100 mAdc, I
E
= 0) MMBT5088L
MMBT5089L
V
(BR)CBO
35
30
−
−
Vdc
Collector Cutoff Current
(V
CB
= 20 Vdc, I
E
= 0) MMBT5088L
(V
CB
= 15 Vdc, I
E
= 0) MMBT5089L
I
CBO
−
−
50
50
nAdc
Emitter Cutoff Current
(V
EB(off)
= 3.0 Vdc, I
C
= 0) MMBT5088L
(V
EB(off)
= 4.5 Vdc, I
C
= 0) MMBT5089L
I
EBO
−
−
50
100
nAdc
ON CHARACTERISTICS
DC Current Gain
(I
C
= 100 mAdc, V
CE
= 5.0 Vdc) MMBT5088L
MMBT5089L
(I
C
= 1.0 mAdc, V
CE
= 5.0 Vdc) MMBT5088L
MMBT5089L
(I
C
= 10 mAdc, V
CE
= 5.0 Vdc) MMBT5088L
MMBT5089L
h
FE
300
400
350
450
300
400
900
1200
−
−
−
−
−
Collector−Emitter Saturation Voltage
(I
C
= 10 mAdc, I
B
= 1.0 mAdc)
V
CE(sat)
− 0.5
Vdc
Base−Emitter Saturation Voltage
(I
C
= 10 mAdc, I
B
= 1.0 mAdc)
V
BE(sat)
− 0.8
Vdc
SMALL−SIGNAL CHARACTERISTICS
Current−Gain — Bandwidth Product
(I
C
= 500 mAdc, V
CE
= 5.0 Vdc, f = 20 MHz)
f
T
50 −
MHz
Collector−Base Capacitance
(V
CB
= 5.0 Vdc, I
E
= 0, f = 1.0 MHz emitter guarded)
C
cb
− 4.0
pF
Emitter−Base Capacitance
(V
EB
= 0.5 Vdc, I
C
= 0, f = 1.0 MHz collector guarded)
C
eb
− 10
pF
Small Signal Current Gain
(I
C
= 1.0 mAdc, V
CE
= 5.0 Vdc, f = 1.0 kHz) MMBT5088L
MMBT5089L
h
fe
350
450
1400
1800
−
Noise Figure
(I
C
= 100 mAdc, V
CE
= 5.0 Vdc, R
S
= 10 kW, f = 1.0 kHz) MMBT5088L
MMBT5089L
NF
−
−
3.0
2.0
dB
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
R
S
i
n
e
n
IDEAL
TRANSISTOR
Figure 1. Transistor Noise Model
MMBT5088L, MMBT5089L
www.onsemi.com
3
Figure 2. Effects of Frequency
f, FREQUENCY (Hz)
7.0
10
20
30
5.0
Figure 3. Effects of Collector Current
I
C
, COLLECTOR CURRENT (mA)
Figure 4. Noise Current
f, FREQUENCY (Hz)
Figure 5. Wideband Noise Figure
R
S
, SOURCE RESISTANCE (OHMS)
3.0
10
NOISE CHARACTERISTICS
(V
CE
= 5.0 Vdc, T
A
= 25°C)
NOISE VOLTAGE
e
n
, NOISE VOLTAGE (nV)
e
n
, NOISE VOLTAGE (nV)
I
n
, NOISE CURRENT (pA)
NF, NOISE FIGURE (dB)
20 50 100 200 500 1k 2k 5k 10k 20k 50k 100k
BANDWIDTH = 1.0 Hz
BANDWIDTH = 1.0 Hz
BANDWIDTH = 1.0 Hz
I
C
= 10 mA
300 mA
30 mA
R
S
≈ 0
3.0 mA
1.0 mA
7.0
10
20
30
5.0
3.0
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10
R
S
≈ 0
f = 10 Hz
100 Hz
1.0 kHz
10 kHz
100 kHz
I
C
= 10 mA
3.0 mA
1.0 mA
300 mA
100 mA
10 mA
R
S
≈ 0
10
10 20 50 100 200 500 1k 2k 5k 10k 20k 50k 100k
0.1
0.2
0.3
1.0
0.7
2.0
3.0
5.0
7.0
10 20 50 100 200 500 1k 2k 5k 10k 20k 50k 100k
0
4.0
8.0
12
16
20
BANDWIDTH = 10 Hz to 15.7 kHz
I
C
= 1.0 mA
500 mA
100 mA
10 mA
100 Hz NOISE DATA
300
200
100
3.0
5.0
7.0
10
20
30
50
70
R
S
, SOURCE RESISTANCE (OHMS)
10 20 50 100 200 500 1k 2k 5k 10k 20k 50k 100k
V
T
, TOTAL NOISE VOLTAGE (nV)
NF, NOISE FIGURE (dB)
0
4.0
8.0
12
16
20
Figure 6. Total Noise Voltage
BANDWIDTH = 1.0 Hz I
C
= 10 mA
3.0 mA
1.0 mA
300 mA
100 mA
30 mA
10 mA
10 20 50 100 200 500 1k 2k 5k 10k 20k 50k 100k
I
C
= 10 mA
300 mA
100 mA
30 mA
3.0 mA
1.0 mA
10 mA
BANDWIDTH = 1.0 Hz
R
S
, SOURCE RESISTANCE (OHMS)
Figure 7. Noise Figure
0.5
P1-P3P4-P5

MMBT5089LT1G

Mfr. #:
Buy MMBT5089LT1G
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - BJT 50mA 30V NPN
Lifecycle:
New from this manufacturer.
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