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APT30DQ60BHBG

P1-P3P4-P4
052-6321 Rev A 1-2009
PRODUCT BENEFITS
• Low Losses
• Low Noise Switching
• Cooler Operation
• Higher Reliability Systems
• Increased System Power
Density
PRODUCT FEATURES
• Ultrafast Recovery Times
• Soft Recovery Characteristics
• Popular TO-247 Package or
Surface Mount D
3
PAK Package
• Low Forward Voltage
• Low Leakage Current
• Avalanche Energy Rated
PRODUCT APPLICATIONS
• Anti-Parallel Diode
-Switchmode Power Supply
-Inverters
• Free Wheeling Diode
-Motor Controllers
-Converters
-Inverters
• Snubber Diode
• PFC
• RoHS Compliant
ULTRAFAST SOFT RECOVERY RECTIFIER DIODE
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
MAXIMUM RATINGS All Ratings per diode: T
C
= 25°C unless otherwise specifi ed.
STATIC ELECTRICAL CHARACTERISTICS
Symbol
V
F
I
RM
C
T
UNIT
Volts
A
pF
MIN TYP MAX
2.0 2.4
2.4
1.7
25
500
36
Characteristic / Test Conditions
Forward Voltage
Maximum Reverse Leakage Current
Junction Capacitance, V
R
= 200V
I
F
= 30A
I
F
= 60A
I
F
= 30A, T
J
= 125°C
V
R
= 600V
V
R
= 600V, T
J
= 125°C
Characteristic / Test Conditions
Maximum D.C. Reverse Voltage
Maximum Peak Repetitive Reverse Voltage
Maximum Working Peak Reverse Voltage
Maximum Average Forward Current (T
C
= 67°C, Duty Cycle = 0.5)
RMS Forward Current (Square wave, 50% duty)
Non-Repetitive Forward Surge Current (T
J
= 45°C, 8.3ms)
Avalanche Energy (1A, 40mH)
Operating and StorageTemperature Range
Lead Temperature for 10 Sec.
Symbol
V
R
V
RRM
V
RWM
I
F(AV)
I
F(RMS)
I
FSM
E
AVL
T
J
,T
STG
T
L
UNIT
Volts
Amps
mJ
°C
APT30DQ60BHB(G)
600
30
51
320
20
-55 to 175
300
APT30DQ60BHB
APT30DQ60BHB(G)
600V 2X30A
1 - Cathode 1
2 - Anode 1
Cathode 2
3 - Anode 2
2
3
1
T
O
-
2
4
7
1
2
3
APT30DQ60BHB(G)
DYNAMIC CHARACTERISTICS
052-6321 Rev A 1-2009
FIGURE 1b, TRANSIENT THERMAL IMPEDANCE MODEL
MIN TYP MAX
-
23
- 30
- 55
- 3 -
- 175
- 485
- 6 -
- 75
- 855
- 22
UNIT
ns
nC
Amps
ns
nC
Amps
ns
nC
Amps
Characteristic
Reverse Recovery Time
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
Symbol
t
rr
t
rr
Q
rr
I
RRM
t
rr
Q
rr
I
RRM
t
rr
Q
rr
I
RRM
Test Conditions
I
F
= 30A, di
F
/dt = -200A/s
V
R
= 400V, T
C
= 25°C
I
F
= 30A, di
F
/dt = -200A/s
V
R
= 400V, T
C
= 125°C
I
F
= 30A, di
F
/dt = -1000A/s
V
R
= 400V, T
C
= 125°C
I
F
= 1A, di
F
/dt = -100A/s, V
R
= 30V, T
J
= 25°C
THERMAL AND MECHANICAL CHARACTERISTICS
Characteristic / Test Conditions
Junction-to-Case Thermal Resistance
Package Weight
Maximum Mounting Torque
Symbol
R
JC
W
T
Torque
MIN TYP MAX
1.5
0.22
5.9
10
1.1
UNIT
°C/W
oz
g
lb•in
N•m
Microsemi reserves the right to change, without notice, the specifi cations and information contained herein.
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
10
-5
10
-4
10
-3
10
-2
0.1 1 10
RECTANGULAR PULSE DURATION (seconds)
FIGURE 1a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
Peak T
J
= P
DM
x Z
θJC
+
T
C
Duty Factor D =
t
1
/
t
2
t
2
t
1
P
DM
Note:
Z
JC
, THERMAL IMPEDANCE (°C/W)
Dissipated Power
(Watts)
T
J
(°C) T
C
(°C)
Z
EXT
are the external thermal
impedances: Case to sink,
sink to ambient, etc. Set to
zero when modeling only
the case to junction.
Z
EXT
0.481
1.019
0.0023
0.0531
052-6321 Rev A 1-2009
APT30DQ60BHB(G)
TYPICAL PERFORMANCE CURVES
0
20
40
60
80
100
120
140
160
0 200 400 600 800 1000
0
50
100
150
200
250
0 1 2 3 4 5 6 7 8
Case Temperature (°C)
FIGURE 7, Maximum Average Forward Current vs. Case Temperature
-di
F
/dt, CURRENT RATE OF CHANGE (A/s )
FIGURE 5, Reverse Recovery Current vs. Current Rate of Change
0
10
20
30
40
50
60
25 50 75 100 125 150 175
0
5
10
15
20
25
0 200 400 600 800 1000
0
0.2
0.3
0.4
0.5
1.0
1.2
1.3
0 25 50 75 100 125 150
0
200
400
600
800
1000
1200
1400
0 200 400 600 800 1000
Duty cycle = 0.5
T
J
= 45°C
I
RRM
Q
RR
t
RR
60A
30A
15A
30A
T
J
= 55°C
T
J
= 150°C
V
F
, ANODE-TO-CATHODE VOLTAGE (V)
FIGURE 2, Forward Current vs. Forward Voltage
I
F
, FORWARD CURRENT (A)
T
J
= 25°C
T
J
= 125°C
-di
F
/dt, CURRENT RATE OF CHANGE (A/s )
FIGURE 3, Reverse Recovery Time vs. Current Rate of Change
t
rr
, COLLECTOR CURRENT (A)
Q
rr
, REVERSE RECOVERY CHARGE
(nC)
T
J
, JUNCTION TEMPERATURE (°C)
FIGURE 6, Dynamic Parameters vs Junction Temperature
K
f
, DYNAMIC PARAMETERS
(Normalized to 1000A/s)
I
RRM
, REVERSE RECOVERY CURRENT
(A)
I
F(AV)
(A)
0
40
80
120
160
200
1 10 100 200
V
R
, REVERSE VOLTAGE (V)
FIGURE 8, Junction Capacitance vs. Reverse Voltage
C
J
, JUNCTION CAPACITANCE (pF)
T
J
= 125°C
V
R
= 400V
T
J
= 125°C
V
R
= 400V
-di
F
/dt, CURRENT RATE OF CHANGE (A/s )
FIGURE 4, Reverse Recovery Charge vs. Current Rate of Change
T
J
= 125°C
V
R
= 400V
15A
60A
60A
15A
30A
P1-P3P4-P4

APT30DQ60BHBG

Mfr. #:
Buy APT30DQ60BHBG
Manufacturer:
Microchip / Microsemi
Description:
Diodes - General Purpose, Power, Switching FG, FRED, 600V, 30A, TO-247, RoHS
Lifecycle:
New from this manufacturer.
Delivery:
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