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NTTFS5820NLTAG

P1-P3P4-P6
© Semiconductor Components Industries, LLC, 2011
November, 2011 − Rev. 1
1 Publication Order Number:
NTTFS5820NL/D
NTTFS5820NL
Power MOSFET
60 V, 37 A, 11.5 mW
Features
• Low R
DS(on)
• Low Capacitance
• Optimized Gate Charge
• These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS (T
J
= 25°C unless otherwise stated)
Parameter
Symbol Value Unit
Drain−to−Source Voltage V
DSS
60 V
Gate−to−Source Voltage V
GS
±20 V
Continuous Drain
Current R
q
JA
(Note 1)
Steady
State
T
A
= 25°C
I
D
11
A
T
A
= 100°C 7
Power Dissipation R
q
JA
(Note 1)
T
A
= 25°C
P
D
2.7
W
T
A
= 100°C 1.1
Continuous Drain
Current R
q
JC
(Note 1)
T
C
= 25°C
I
D
37
A
T
C
= 100°C 24
Power Dissipation
R
q
JC
(Note 1)
T
C
= 25°C
P
D
33
W
T
C
= 100°C 13
Pulsed Drain Current
t
p
= 10 ms
I
DM
149 A
Operating Junction and Storage Temperature T
J
,
T
stg
−55 to
+150
°C
Source Current (Body Diode) I
S
37 A
Single Pulse Drain−to−Source Ava-
lanche Energy
L = 0.1 mH
E
AS
48 mJ
I
AS
31 A
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
T
L
260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter Symbol Value Unit
Junction−to−Case – Steady
State (Note 1)
R
q
JC
3.8
°C/W
Junction−to−Ambient – Steady
State (Note 1)
R
q
JA
46.7
1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq
[2 oz] including traces.
ORDERING INFORMATION
http://onsemi.com
Device Package Shipping
†
V
(BR)DSS
R
DS(on)
MAX I
D
MAX
60 V
11.5 mW @ 10 V
37 A
N−Channel MOSFET
D (5−8)
S (1,2,3)
G (4)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
WDFN8
(m8FL)
CASE 511AB
MARKING DIAGRAM
15 mW @ 4.5 V
NTTFS5820NLTAG WDFN8
(Pb−Free)
1500 / Tape & Reel
(Note: Microdot may be in either location)
1
5820 = Specific Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
1
NTTFS5820NLTWG WDFN8
(Pb−Free)
5000 / Tape & Reel
5820
AYWWG
G
D
D
D
D
S
S
S
G
NTTFS5820NL
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise specified)
Parameter
Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= 250 mA
60 V
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
(BR)DSS
/T
J
57 mV/°C
Zero Gate Voltage Drain Current I
DSS
V
GS
= 0 V,
V
DS
= 60 V
T
J
= 25°C 1.0 mA
T
J
= 125°C 10
Gate−to−Source Leakage Current I
GSS
V
DS
= 0 V, V
GS
= ±20 V ±100 nA
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250 mA
1.5 2.3 V
Negative Threshold Temperature
Coefficient
V
GS(TH)
/T
J
6.2 mV/°C
Drain−to−Source On Resistance R
DS(on)
V
GS
= 10 V I
D
= 8.7 A 10.1 11.5 mW
V
GS
= 4.5 V I
D
= 7.3 A 13.0 15
Forward Transconductance g
FS
V
DS
= 5 V, I
D
= 10 A 24.6 S
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
C
iss
V
GS
= 0 V, f = 1.0 MHz, V
DS
= 25 V
1462
pF
Output Capacitance C
oss
150
Reverse Transfer Capacitance C
rss
96
Total Gate Charge Q
G(TOT)
V
GS
= 10 V, V
DS
= 48 V, I
D
= 10 A 28 nC
V
GS
= 4.5 V, V
DS
= 48 V, I
D
= 10 A 15
Threshold Gate Charge Q
G(TH)
V
GS
= 4.5 V, V
DS
= 48 V, I
D
= 10 A
1
nC
Gate−to−Source Charge Q
GS
4
Gate−to−Drain Charge Q
GD
8
Plateau Voltage V
GP
3 V
Gate Resistance R
G
0.62
W
SWITCHING CHARACTERISTICS (Note 3)
Turn−On Delay Time
t
d(on)
V
GS
= 4.5 V, V
DS
= 48 V,
I
D
= 10 A, R
G
= 2.5 W
10
ns
Rise Time t
r
28
Turn−Off Delay Time t
d(off)
19
Fall Time t
f
22
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
V
GS
= 0 V,
I
S
= 10 A
T
J
= 25°C 0.79 1.2
V
T
J
= 125°C 0.65
Reverse Recovery Time t
RR
V
GS
= 0 V, d
IS
/d
t
= 100 A/ms,
I
S
= 10 A
19
ns
Charge Time t
a
13
Discharge Time t
b
6
Reverse Recovery Charge Q
RR
15 nC
2. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
3. Switching characteristics are independent of operating junction temperatures.
NTTFS5820NL
http://onsemi.com
3
TYPICAL CHARACTERISTICS
012345
Figure 1. On−Region Characteristics
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
10 V
3.4 V
V
GS
= 5 V
2.8 V
4.0 V
3.8 V
3.6 V
T
J
= 25°C
3.0 V
3.2 V
0
10
20
30
40
50
60
70
80
0
10
20
30
40
50
60
70
80
12345
V
DS
≥ 10 V
T
J
= 25°C
T
J
= −55°C
T
J
= 125°C
Figure 2. Transfer Characteristics
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
0.005
0.010
0.015
0.020
0.025
0.030
24681012
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
I
D
= 10 A
T
J
= 25°C
0.008
0.010
0.012
0.014
0.016
5 10152025303540
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
I
D
, DRAIN CURRENT (A)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
V
GS
= 4.5 V
T
J
= 25°C
V
GS
= 10 V
0.5
0.7
0.9
1.1
1.3
1.5
1.7
1.9
2.1
−50 −25 0 25 50 75 100 125 150
Figure 5. On−Resistance Variation with
Temperature
T
J
, JUNCTION TEMPERATURE (°C)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (NORMALIZED)
V
GS
= 10 V
I
D
= 10 A
100
1,000
10,000
100,000
10 20 30 40 50 60
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
I
DSS
, LEAKAGE (nA)
T
J
= 125°C
T
J
= 150°C
V
GS
= 0 V
P1-P3P4-P6

NTTFS5820NLTAG

Mfr. #:
Buy NTTFS5820NLTAG
Manufacturer:
ON Semiconductor
Description:
MOSFET Single N-CH 60V 11A, 37A
Lifecycle:
New from this manufacturer.
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