LTM2894
4
2894f
For more information www.linear.com/LTM2894
swiTching characTerisTics
isolaTion characTerisTics
Note 1: Stresses beyond those listed under Absolute Maximum Ratings
may cause permanent damage to the device. Exposure to any Absolute
Maximum Rating condition for extended periods may affect device
reliability and lifetime.
Note 2: Guaranteed by design and not subject to test.
Note 3: This µModule transceiver includes overtemperature protection that
is intended to protect the device during momentary overload conditions.
Junction temperature will exceed 125°C when overtemperature protection
is active. Continuous operation above specified maximum operating
junction temperature may result in device degradation or failure.
Note 4: Maximum data rate is guaranteed by other measured parameters
and is not directly tested.
Note 5: Device considered a 2-terminal device. Measurement between
groups of pins A1 through B6 shorted together and pins W1 through X6
shorted together.
Note 6: The rated dielectric insulation voltage should not be interpreted as
a continuous voltage rating.
Note 7: In accordance with UL1577, each device is proof tested at the
7500V
RMS
rating by applying an acceleration factor of 1.2, 9000V
RMS
, for
one second.
Note 8: Evaluated by design, not production tested.
SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
t
LPRR
,t
LPFF
Propagation Delay Figure 2, C
L
= 50pF to 600pF
l
200 300 ns
Differential Jitter To Next Transition (Note 8) ±45 ns
Differential Jitter To Paired Transitions (Note 8) ±15 ns
Full Speed USB
t
FDR
Full Speed Data Rate C
L
= 50pF (Note 4) 12 Mbps
t
FR
Rise Time Figure 3, C
L
= 50pF
l
4 20 ns
t
FF
Fall Time Figure 3, C
L
= 50pF
l
4 20 ns
t
FPRR
, t
FPFF
Propagation Delay Figure 3, C
L
= 50pF
l
60 80 115 ns
Differential Jitter To Next Transition (Note 8) 2 ns
Differential Jitter To Paired Transitions (Note 8) 1 ns
Suspend
Wake Up from Suspend Mode Resume Signal
l
0.25 10 µs
ESD HBM (Note 8)
Isolation Barrier GND to GND2 ±20 kV
D1
+
, D1
–
, D2
+
, D2
–
D1
+
/D1
–
to GND, V
BUS,
or V
LO
D2
+
/D2
–
to GND2, V
BUS2
, or V
LO2
±20
±20
kV
kV
ON or ON2 ±4 kV
SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
Isolation Barrier: GND to GND2
V
ISO
Rated Dielectric Insulation Voltage (Notes 6, 7) 1 Minute (Derived from 1 Second Test) 7500 V
RMS
1 Second (Note 5) 9000 V
RMS
Common Mode Transient Immunity (Note 2) 50 75 kV/µs
V
IORM
Maximum Working Insulation Voltage (Note 2) 1414 V
PEAK
, V
DC
1000 V
RMS
Partial Discharge V
PR
= 2650 V
PEAK
(Note 5) 5 pC
CTI Comparative Tracking Index IEC 60112 (Note 2) 600 V
RMS
Depth of Erosion IEC 60112 (Note 2) 0.017 mm
DTI Distance Through Insulation (Note 2) 0.2 mm
Input to Output Resistance (Notes 2, 5) 1 5 TΩ
Input to Output Capacitance (Notes 2, 5) 2 pF
Creepage Distance (Notes 2, 5) 17.4 mm
The l denotes the specifications which apply over the full operating
temperature range, otherwise specifications are at T
A
= 25°C. V
BUS
= 5V, V
BUS2
= 5V, GND = GND2 = 0V, ON = 3.3V, ON2 = 3.3V.
Specifications are at T
A
= 25°C.
