SIDC32D170HX1SA3

SIDC32D170H
Edited by INFINEON Technologies AI DP PSD CLS, L 4461A, Edition 2, 02.11.2004
Fast switching diode chip in EMCON 3 -Technology
This chip is used for:
EUPEC power modules
FEATURES:
1700V EMCON 3 technology 200 µm chip
soft, fast switching
low reverse recovery charge
small temperature coefficient
Applications:
resonant applications, drives
A
C
Chip Type V
R
I
F
Die Size Package Ordering Code
SIDC32D170H
1700V
50A 5.7 x 5.7 mm
2
sawn on foil
Q67050-A4174-
A001
MECHANICAL PARAMETER:
Raster size 5.7 x 5.7
Area total / active 32.49 / 22.41
Anode pad size 3.68 x 3.68
mm
2
Thickness 200 µm
Wafer size 150 mm
Flat position 180 deg
Max. possible chips per wafer 442 pcs
Passivation frontside Photoimide
Anode metallization 3200 nm Al Si Cu
Cathode metallization
Ni Ag system
suitable for epoxy and soft solder die bonding
Die bond electrically conductive glue or solder
Wire bond Al, 500µm
Reject Ink Dot Size 0.65mm; max 1.2mm
Recommended Storage Environment
store in original container, in dry nitrogen,
< 6 month at an ambient temperature of 23°C
SIDC32D170H
Edited by INFINEON Technologies AI DP PSD CLS, L 4461A, Edition 2, 02.11.2004
Maximum Ratings
Parameter Symbol Condition Value Unit
Repetitive peak reverse voltage V
RRM
1700 V
Continuous forward current limited by
T
jmax
I
F
50
Single pulse forward current
(depending on wire bond configuration)
I
FSM
t
P
= 10 ms sinusoidal 310
Maximum repetitive forward current
limited by T
jmax
I
FRM
100
A
Operating junction and storage
temperature
T
j
, T
stg
-55...+150
°C
Static Electrical Characteristics (tested on chip), T
j
=25 °C, unless otherwise specified
Value
Parameter Symbol
Conditions
min. Typ. max.
Unit
Reverse leakage current I
R
V
R
=1700V
T
j
=25°C
27 µA
Cathode-Anode
breakdown Voltage
V
Br
I
R
=0.25mA T
j
=25°C 1700
V
Forward voltage drop
V
F
I
F
=50A
T
j
=25°C
1.8
V
Dynamic Electrical Characteristics, at T
j
= 25 °C, unless otherwise specified, tested at component
Value
Parameter Symbol
Conditions
min. Typ. max.
Unit
I
RRM1
T
j
= 25 °C
62
Peak recovery current
I
RRM2
I
F
=50A
di/dt=730A/µs
V
R
=900V
T
j
= 125 °C
67
A
Q
rr1
T
j
=25°C
13.3
Reverse recovery charge
Q
rr2
I
F
=50A
di/dt=730A/µs
V
R
=900V
T
j
=125°C
21.7
µC
E
rec1
T
j
=25°C
6.7 Reverse recovery energy
E
rec2
I
F
=50A
di/dt=730A/µs
V
R
=900V
T
j
=125°C
11.7
mJ
SIDC32D170H
Edited by INFINEON Technologies AI DP PSD CLS, L 4461A, Edition 2, 02.11.2004
CHIP DRAWING:

SIDC32D170HX1SA3

Mfr. #:
Manufacturer:
Infineon Technologies
Description:
DIODE GEN PURP 1.7KV 50A WAFER
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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