ADP195 Data Sheet
Rev. C | Page 4 of 12
ABSOLUTE MAXIMUM RATINGS
Table 2.
Parameter Rating
VIN, VIN1, VIN2 to GND −0.3 V to +4.0 V
VOUT, VOUT1, VOUT2 to GND −0.3 V to +4.0 V
EN to GND −0.3 V to +4.0 V
Continuous Drain Current
T
A
= 25°C ±2 A
T
A
= 85°C ±1.1 A
Continuous Diode Current −50 mA
Storage Temperature Range −65°C to +150°C
Operating Junction Temperature Range −40°C to +125°C
Operating Ambient Temperature Range −40°C to +85°C
Soldering Conditions JEDEC J-STD-020
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
THERMAL DATA
Absolute maximum ratings apply individually only, not in
combination. The ADP195 can be damaged when the junction
temperature limits are exceeded. Monitoring ambient temperature
does not guarantee that T
J
is within the specified temperature
limits. In applications with high power dissipation and poor
PCB thermal resistance, the maximum ambient temperature
may need to be derated.
In applications with moderate power dissipation and low PCB
thermal resistance, the maximum ambient temperature can
exceed the maximum limit as long as the junction temperature
is within specification limits. The junction temperature (T
J
) of
the device is dependent on the ambient temperature (T
A
), the
power dissipation of the device (P
D
), and the junction-to-ambient
thermal resistance of the package (θ
JA
).
Maximum junction temperature (T
J
) is calculated from the
ambient temperature (T
A
) and power dissipation (P
D
) using the
formula
T
J
= T
A
+ (P
D
× θ
JA
)
Junction-to-ambient thermal resistance (θ
JA
) of the package is
based on modeling and calculation using a 4-layer board. The
junction-to-ambient thermal resistance is highly dependent on
the application and board layout. In applications where high
maximum power dissipation exists, close attention to thermal
board design is required. The value of θ
JA
may vary, depending on
PCB material, layout, and environmental conditions. The speci-
fied values of θ
JA
are based on a 4-layer, 4 inch × 3 inch PCB.
See JESD51-7 and JESD51-9 for detailed information regarding
board construction. For additional information, see the AN-617
application note, MicroCSP
TM
Wafer Level Chip Scale Package.
Ψ
JB
is the junction-to-board thermal characterization parameter
with units of °C/W. Ψ
JB
of the package is based on modeling and
calculation using a 4-layer board. The JESD51-12 document,
Guidelines for Reporting and Using Electronic Package Thermal
Information, states that thermal characterization parameters are
not the same as thermal resistances. Ψ
JB
measures the component
power flowing through multiple thermal paths rather than through
a single path, as in thermal resistance (θ
JB
). Therefore, Ψ
JB
thermal
paths include convection from the top of the package as well as
radiation from the package, factors that make Ψ
JB
more useful
in real-world applications. Maximum junction temperature (T
J
)
is calculated from the board temperature (T
B
) and the power
dissipation (P
D
) using the formula
T
J
= T
B
+ (P
D
× Ψ
JB
)
See JESD51-8, JESD51-9, and JESD51-12 for more detailed
information about Ψ
JB
.
THERMAL RESISTANCE
θ
JA
and Ψ
JB
are specified for the worst-case conditions, that is, a
device soldered in a circuit board for surface-mount packages.
Table 3. Thermal Resistance
Package Type θ
JA
Ψ
JB
Unit
4-Ball, 0.5 mm Pitch WLCSP 260 58.4 °C/W
6-Lead, 2 mm × 2 mm LFCSP 72.1 24.0 °C/W
ESD CAUTION
