©2002 Fairchild Semiconductor Corporation Rev. A2, November 2002
KST5088/5089
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25°C unless otherwise noted
Electrical Characteristics
T
a
=25°C unless otherwise noted
Symbol Parameter Value Units
V
CBO
Collector-Base Voltage
: KST5088
: KST5089
35
30
V
V
V
CEO
Collector-Emitter Voltage
: KST5088
: KST5089
30
25
V
V
V
EBO
Emitter-Base Voltage 4.5 V
I
C
Collector Current 50 mA
P
C
Collector Power Dissipation 350 mW
T
STG
Storage Temperature 150 °C
Symbol Parameter Test Condition Min. Max. Units
BV
CBO
Collector-Base Breakdown Voltage
: KST5088
: KST5089
I
C
=100µA, I
E
=0
35
30
V
V
BV
CEO
Collector-Emitter Breakdown Voltage
: KST5088
: KST5089
I
C
=1mA, I
B
=0
30
25
V
V
I
CBO
Collector Cut-off Current
: KST5088
: KST5089
V
CB
=20V, I
E
=0
V
CB
=15V, I
E
=0
50
50
nA
nA
I
EBO
Emitter Cut-off Current V
EB
=3V, I
C
=0 50 nA
h
FE
DC Current Gain
: KST5088
: K S T 5 0 8 9
: KST5088
: KST5089
: KST5088
: KST5089
V
CE
=5V, I
C
=100µA
V
CE
=5V, I
C
=1mA
V
CE
=5V, I
C
=10mA
300
400
350
450
300
400
900
1,200
V
CE
(sat) Collector-Emitter Saturation Voltage I
C
=10mA, I
B
=1mA 0.5 V
V
BE
(sat) Base-Emitter Saturation Voltage I
C
=10mA, I
B
=1mA 0.8 V
f
T
Current Gain-Bandwidth Product V
CE
=5V, I
C
=500µA, f=20MHz 50 MHz
C
ob
Output Capacitance V
CB
=5V, I
E
=0, f=100KHz 4 pF
NF Noise Figure
: KST5088
: KST5089
I
C
=100µA, V
CE
=5V
R
S
=10KΩ, f=10Hz to 15.7KHz
3
2
dB
dB
KST5088/5089
Low Noise Transistor
1. Base 2. Emitter 3. Collector
SOT-23
1
2
3
