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VS-MBRB1535CTR-M3

P1-P3P4-P6P7-P9P10-P12P13-P13
VS-MBRB15..CT-M3, VS-MBR15..CT-1-M3
www.vishay.com
Vishay Semiconductors
Revision: 03-Nov-17
1
Document Number: 96403
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
High Performance Schottky Rectifier, 2 x 7.5 A
FEATURES
• 150 °C T
J
operation
• Center tap TO-220 package
• Low forward voltage drop
• High frequency operation
• High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
• Guard ring for enhanced ruggedness and long term
reliability
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 245 °C
• Designed and qualified according to JEDEC
®
-JESD 47
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
The VS-MBR(B)15... center tap Schottky rectifier has been
optimized for low reverse leakage at high temperature. The
proprietary barrier technology allows for reliable operation
up to 150 °C junction temperature. Typical applications are
in switching power supplies, converters, freewheeling
diodes, and reverse battery protection.
PRIMARY CHARACTERISTICS
I
F(AV)
2 x 7.5 A
V
R
35 V, 45 V
V
F
at I
F
0.57 V
I
RM
max. 15 mA at 125 °C
T
J
max. 150 °C
E
AS
7 mJ
Package D
2
PAK (TO-263AB), TO-262AA
Circuit configuration Common cathode
D
2
PAK (TO-263AB)
TO-262AA
1
3
2
1
3
2
VS-MBRB15..CT-M3
VS-MBR15..CT-1-M3
Base
common
cathode
A
node Anode
Common
cathode
1
3
2
2
Base
common
cathode
Anode Anode
Common
cathode
1
3
2
2
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
Rectangular waveform 15 A
V
RRM
35/45 V
I
FSM
t
p
= 5 μs sine 690 A
V
F
7.5 A
pk
, T
J
= 125 °C 0.57 V
T
J
-65 to +150 °C
VOLTAGE RATINGS
PARAMETER SYMBOL
VS-MBRB1535CT-M3
VS-MBR1535CT-1-M3
VS-MBRB1545CT-M3
VS-MBR1545CT-1-M3
UNITS
Maximum DC reverse voltage V
R
35 45 V
Maximum working peak reverse voltage V
RWM
VS-MBRB15..CT-M3, VS-MBR15..CT-1-M3
www.vishay.com
Vishay Semiconductors
Revision: 03-Nov-17
2
Document Number: 96403
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average
forward current
per leg
I
F(AV)
T
C
= 131 °C, rated V
R
7.5
A
per device 15
Maximum peak one cycle
non-repetitive surge
I
FSM
5 μs sine or 3 μs
rect. pulse
Following any rated load condition
and with rated V
RRM
applied
690
Surge applied at rated load conditions halfwave,
single phase, 60 Hz
150
Non-repetitive avalanche energy per leg E
AS
T
J
= 25 °C, I
AS
= 2 A, L = 3.5 mH 7 mJ
Repetitive avalanche current per leg I
AR
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
2A
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop V
FM
(1)
15 A T
J
= 25 °C 0.84
V7.5 A
T
J
= 125 °C
0.57
15 A 0.72
Maximum instantaneous reverse current I
RM
(1)
T
J
= 25 °C
Rated DC voltage
0.1
mA
T
J
= 125 °C 15
Maximum junction capacitance C
T
V
R
= 5 V
DC
(test signal range 100 kHz to 1 MHz), 25 °C 400 pF
Typical series inductance L
S
Measured from top of terminal to mounting plane 8.0 nH
Maximum voltage rate of change dV/dt Rated V
R
10 000 V/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction temperature range T
J
-65 to +150
°C
Maximum storage temperature range T
Stg
-65 to +175
Maximum thermal resistance,
junction to case per leg
R
thJC
DC operation 3.0
°C/W
Typical thermal resistance,
case to heatsink
R
thCS
Mounting surface, smooth and greased 0.50
Maximum thermal resistance,
junction to ambient
R
thJA
DC operation 60
Approximate weight
2g
0.07 oz.
Mounting torque
minimum 6 (5)
kgf · cm
(lbf · in)
maximum 12 (10)
Marking device
Case style D
2
PAK (TO-263AB) MBRB1545CT
Case style TO-262AA MBR1545CT-1
VS-MBRB15..CT-M3, VS-MBR15..CT-1-M3
www.vishay.com
Vishay Semiconductors
Revision: 03-Nov-17
3
Document Number: 96403
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Maximum Forward Voltage Drop Characteristics
(Per Leg)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage (Per Leg)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics (Per Leg)
1
10
1
100
I
F
- Instantaneous
Forward Current (A)
V
FM
- Forward Voltage Drop (V)
0.2 0.4 0.6 0.8 1.0
1.2 1.4 1.6 1.8 2.0
0
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
0.0001
0.1
1
10
0.01
0.001
100
I
R
- Reverse Current (mA)
V
R
- Reverse Voltage (V)
1051520
40
45
25 30 35
0
T
J
= 150 °C
T
J
= 125 °C
T
J
= 100 °C
T
J
= 75 °C
T
J
= 50 °C
T
J
= 25 °C
100
1000
C
T
- Junction Capacitance (pF)
V
R
- Reverse Voltage (V)
10
20
40
50
30
0
T
J
= 25 °C
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1
t
1
- Rectangular Pulse Duration (s)
Z
thJC
- Thermal Impedance (°C/W)
10
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
Single pulse
(thermal resistance)
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1
/t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.001
P1-P3P4-P6P7-P9P10-P12P13-P13

VS-MBRB1535CTR-M3

Mfr. #:
Buy VS-MBRB1535CTR-M3
Manufacturer:
Vishay Semiconductors
Description:
Schottky Diodes & Rectifiers Schottky - D2PAK-e3
Lifecycle:
New from this manufacturer.
Delivery:
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