IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
MMIX1T600N04T2
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
Symbol Test Conditions Characteristic Values
(T
J
= 25°C, Unless Otherwise Specified) Min. Typ. Max.
g
fs
V
DS
= 10V, I
D
= 60A, Note 1 90 150 S
C
iss
40 nF
C
oss
V
GS
= 0V, V
DS
= 25V, f = 1MHz 6400 pF
C
rss
1470 pF
R
GI
Gate Input Resistance 1.46 Ω
t
d(on)
40 ns
t
r
20 ns
t
d(off)
90 ns
t
f
250 ns
Q
g(on)
590 nC
Q
gs
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
DSS
127 nC
Q
gd
163 nC
R
thJC
0.18 °C/W
R
thCS
0.05 °C/W
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(T
J
= 25°C, Unless Otherwise Specified) Min. Typ. Max.
I
S
V
GS
= 0V 600 A
I
SM
Repetitive, Pulse Width Limited by T
JM
1800 A
V
SD
I
F
= 100A, V
GS
= 0V, Note 1 1.2 V
t
rr
100 ns
I
RM
3.3 A
Q
RM
165 nC
Resistive Switching Times
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 200A
R
G
= 1Ω (External)
I
F
= 150A, V
GS
= 0V
-di/dt = 100A/μs
V
R
= 20V
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
