WeEn Semiconductors
PHE13003C
NPN power transistor
PHE13003C All information provided in this document is subject to legal disclaimers.
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WeEn Semiconductors Co., Ltd. 2016. All rights reserved
Product data sheet 13 October 2016 3 / 11
7. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
CESM
collector-emitter peak
voltage
V
BE
= 0 V - 700 V
V
CBO
collector-base voltage I
E
= 0 A - 700 V
V
CEO
collector-emitter voltage I
B
= 0 A - 400 V
V
EBO
emitter-base voltage I
C
= 0 A; I(Emitter) = 10 mA - 9 V
I
C
collector current DC - 1.5 A
I
CM
peak collector current - 3 A
I
B
base current DC - 0.75 A
I
BM
peak base current - 1.5 A
P
tot
total power dissipation T
lead
≤ 25 °C; Fig. 1 - 2.1 W
T
stg
storage temperature -65 150 °C
T
j
junction temperature - 150 °C
T
lead
(°C)
0 20015050 100
003aae644
40
80
120
P
der
(%)
0
Fig. 1. Normalized total power dissipation as a function of lead temperature
