RSS070N05FU6TB Datasheet RSS070N05FU6TB | P1-P3

RSS070N05

Transistor

Rev.A 1/4

4V Drive

Nch

MOS FET

RSS070N05

zStructure

Silicon N-channel

MOS FET

zFeatures

1) Built-in G-S Protection Diode.

2) Small Surface Mount Package (SOP8).

zApplications

Power switching , DC / DC converter , Inverter

zExternal dimensions (Unit : mm)

zPackaging dimensions zEquivalent circuit

zAbsolute maximum ratings (Ta=25°C)

∗

A protection diode is included between the gate

and the source terminals to protect the diode

against static electricity when the product is in

use.Use a protection circuit when the fixed

voltage are exceeded.

(1) Source

(2) Source

(3) Source

(4) Gate

(5) Drain

(6) Drain

(7) Drain

(8) Drain

(1) (2) (3)

(8) (7) (6) (5)

(1) (2) (3) (4)

(4)

∗

2

∗2 Body Diode.

(8) (7) (6) (5)

∗

1

∗1 ESD Protection Diode.

Each lead has same dimensions

SOP8

3.9

6.0

0.4Min.

5.0

1.27

0.2

1.75

(

1

)

(

4

)

(

8

)

(

5

)

0.4

1pin mark

Package

Code

Taping

Basic ordering unit (pieces)

RSS070N05

TB

2500

Type

Symbol Limits Unit

V

DSS

45 V

V

GSS

20 V

Continuous

I

D

±7.0 A

Pulsed

I

DP

*1

±28 A

zThermal resistance

Continuous

I

S

Pulsed

I

SP

P

D

T

ch

T

stg

1.6 A

*1

28 A

*2

2W

150

o

C

-55 to +150

o

C

2 Mounted on a ceramic board

PW

≤

10

µｓ

, Duty cycle

≤

1

%

Parameter

rain-source voltage

al power dissipation

ate-source voltage

rain current

ource current

Body diode)

hanel temperature

ange of Storage temperature

*

*1

D

Tot

G

D

S

(

C

R

Mounted on a ceramic board

Parameter

hanel to ambient

Symbol Limits Unit

R

th(ch-a)

*

62.5

o

C/W

*

C

RSS070N05

Transistor

Rev.A 2/4

zElectrical characteristics (Ta=25°C)

Parameter Symbol

I

GSS

Y

fs

Min.

−

Typ. Max.

Unit

Conditions

V

(BR) DSS

I

DSS

V

GS (th)

R

DS (on)

C

iss

C

oss

C

rss

t

d (on)

t

r

t

d (off)

t

f

Q

g

Q

gs

Q

gd

∗

Gate-source leakage

Drain-source breakdown voltage

Zero gate voltage drain current

Gate threshold voltage

Static drain-source on-state

resistance

Forward transfer admittance

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Total gate charge

Gate-source charge

Gate-drain charge

∗Pulsed

− 10 µAV

GS

=20V, V

DS

=0V

V

DD

25V

45 −−VI

D

= 1mA, V

GS

=0V

−−1 µAV

DS

= 45V, V

GS

=0V

1.0 − 2.5 V V

DS

= 10V, I

D

= 1mA

− 18 25 I

D

=7A, V

GS

= 10V

− 23 32 mΩ

mΩ

I

D

= 7A, V

GS

= 4.5V

− 25 35 I

D

= 7A, V

GS

= 4.0V

6.0 −−SV

DS

= 10V, I

D

= 7A

− 1000 − pF V

DS

= 10V

− 230

125

− pF V

GS

=0V

−

16

− pF f=1MHz

−

27

− ns

−

57

− ns

−

21

− ns

−

12.0

− ns

−

3.0

16.8 nC

−

4.6

− nC

V

GS

= 5V

−−nC

I

D

= 7A

VDD 25V

I

D

= 3.5A

V

GS

= 10V

R

L

=7.1Ω

R

G

=10Ω

R

L

=3.6Ω R

G

=10Ω

zBody diode characteristics (Source-Drain) (Ta=25°C)

Symbol Min. Typ. Max. Unit

V

SD

*

－－

1.2 V

Fo

*

pulsed

Parameter Condition

rward voltage

I

S

=1.6A/V

GS

=0V

RSS070N05

Transistor

Rev.A 3/4

zElectrical characteristic curves

1

10

100

1000

0.01 0.1 1 10

Drain Current : I

D

[A]

Static Drain-Source On-State

Resistance R

DS(on)

[m

Ω

]

V

GS

=4V

pulsed

Ta=125

o

C

75

o

C

25

o

C

-25

o

C

0.01

0.1

1

10

0.0 0.5 1.0 1.5

Source-Drain Voltage : V

SD

[V]

Source Current : Is [A]

V

GS

=0V

pulsed

Ta=125

o

C

75

o

C

25

o

C

-25

o

C

0.01

0.1

1

10

1.0 1.5 2.0 2.5 3.0 3.5

Gate-Source Voltage : V

GS

[V]

Drain Current : I [A]

V

DS

=10V

pulsed

Ta=125

o

C

75

o

C

25

o

C

-25

o

C

1

10

100

1000

0.01 0.1 1 10

Drain Current : I

D

[A]

Static Drain-Source On-State

Resistance R

DS(on)

[m

Ω

]

V

GS

=10V

pulsed

Ta=125

o

C

75

o

C

25

o

C

-25

o

C

Fig.2 Static Drain-Source On-State

Resistance vs. Drain Current (1)

1

10

100

1000

0.01 0.1 1 10

Drain Current : I

D

[A]

Static Drain-Source On-State

Resistance R

DS(on)

[m

Ω

]

V

GS

=4.5V

pulsed

Ta=125

o

C

75

o

C

25

o

C

-25

o

C

0

20

40

60

80

100

0 5 10 15 20

Gate-Source Voltage : V

GS

[V]

Static Drain-Source On-State

Resistance R

DS(on)

[m

Ω

]

I

D

=3.5A

I

D

=7.0A

Ta=25

o

C

pulsed

10

100

1000

10000

0.01 0.1 1 10 100

Drain-Source Voltage : V

DS

[V]

D

Capacitance : C [pF]

Ta=25

o

C

f=1MHz

V

GS

=0V

C

iss

C

oss

C

rss

1

10

100

1000

10000

0.01 0.1 1 10

Drain Current : I

D

[A]

Switching Time : t [ns]

Ta=25

o

C

V

DD

=25V

V

GS

=10V

R

G

=10

Ω

Pulsed

t

d(on)

t

r

t

d(off)

t

f

0

1

2

3

4

5

6

7

8

9

10

0 5 10 15 20

Total Gate Charge : Qg [nC]

Gate-Source Voltage : V

GS

[V]

Ta=25

o

C

V

DD

=25V

I

D

=7A

R

G

=10

Ω

Pulsed

Fig.1 Typical Transfer Characteristics Fig.3 Static Drain-Source On-State

Resistance vs. Drain Current (2)

Fig.4 Static Drain-Source On-State

Resistance vs. Drain Current (3)

Fig.5 Static Drain-Source

On-State Resistance vs.

Gate-Source Voltage

Fig.6 Source-Current vs.

Source-Drain Voltage

Fig.7 Typical capacitance vs.

Source-Drain Voltage

Fig.8 Switching Characteristics

Fig.9 Dynamic Input Characteristics

RSS070N05FU6TB

RSS070N05FU6TB

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