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IS64WV6416BLL-15BLA3-TR

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18
4
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. C
10/10/06
ISSI
®
IS64WV6416BLL
IS61WV6416BLL
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
VDD = 2.5V-3.6V
Symbol Parameter Test Conditions Min. Max. Unit
VOH Output HIGH Voltage VDD = Min., IOH = –1.0 mA 2.3 — V
VOL Output LOW Voltage VDD = Min., IOL = 1.0 mA — 0.4 V
VIH Input HIGH Voltage 2.0 VDD + 0.3 V
VIL Input LOW Voltage
(1)
–0.3 0.8 V
ILI Input Leakage GND ≤ VIN ≤ VDD –2 2 µA
ILO Output Leakage GND ≤ VOUT ≤ VDD, Outputs Disabled –2 2 µA
Note:
1. VIL (min.) = –0.3V DC; VIL (min.) = –2.0V AC (pulse width - 2.0 ns). Not 100% tested.
VIH (max.) = VDD + 0.3V DC; VIH (max.) = VDD + 2.0V AC (pulse width - 2.0 ns). Not 100% tested.
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
VDD = 3.3V + 10%
Symbol Parameter Test Conditions Min. Max. Unit
VOH Output HIGH Voltage VDD = Min., IOH = –4.0 mA 2.4 — V
VOL Output LOW Voltage VDD = Min., IOL = 8.0 mA — 0.4 V
VIH Input HIGH Voltage 2 VDD + 0.3 V
VIL Input LOW Voltage
(1)
–0.3 0.8 V
ILI Input Leakage GND ≤ VIN ≤ VDD –2 2 µA
ILO Output Leakage GND ≤ VOUT ≤ VDD, Outputs Disabled –2 2 µA
Note:
1. VIL (min.) = –0.3V DC; VIL (min.) = –2.0V AC (pulse width - 2.0 ns). Not 100% tested.
V
IH (max.) = VDD + 0.3V DC; VIH (max.) = VDD + 2.0V AC (pulse width - 2.0 ns). Not 100% tested.
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
5
Rev. C
10/10/06
ISSI
®
IS64WV6416BLL
IS61WV6416BLL
CAPACITANCE
(1)
Symbol Parameter Conditions Max. Unit
CIN Input Capacitance VIN = 0V 6 pF
COUT Input/Output Capacitance VOUT = 0V 8 pF
Note:
1. Tested initially and after any design or process changes that may affect these parameters.
POWER SUPPLY CHARACTERISTICS
(1)
(Over Operating Range)
-12 ns -15 ns
Symbol Parameter Test Conditions Options Min. Max. Min. Max. Unit
ICC VDD Dynamic Operating VDD = Max.,
COM.
—35 —30 mA
Supply Current IOUT = 0 mA, f = fMAX
IND.
—45 —40
AUTO —60 —50
typ.
(2)
—20 —20
ICC1 Operating Supply VDD = Max.,
COM.
—5 —5 mA
Current Iout = 0mA, f = 0
IND.
—5 —5
AUTO —5 —5
I
SB2 CMOS Standby VDD = Max.,
COM.
—20 —20 uA
Current (CMOS Inputs) CE ≥ VDD – 0.2V,
IND.
—50 —50
V
IN ≥ VDD – 0.2V, or
AUTO
—75 —75
VIN ≤ 0.2V, f = 0 typ.
(2)
—6 —6
Note:
1. At f = f
MAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
2. Typical values are measured at V
DD=2.5V, TA=25
o
C. Not 100% tested.
6
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. C
10/10/06
ISSI
®
IS64WV6416BLL
IS61WV6416BLL
AC TEST CONDITIONS
Parameter Unit Unit
(2.5V-3.6V) (3.3V + 10%)
Input Pulse Level 0V to VDD V 0V to VDD V
Input Rise and Fall Times 1.5ns 1.5ns
Input and Output Timing VDD/2 VDD/2 + 0.05
and Reference Level (VRef)
Output Load See Figures 1a and 1b See Figures 1a and 1b
AC TEST LOADS
Figure 1a. Figure 1b.
30 pF
Including
jig and
scope
Zo=50Ω
OUTPUT
V
Ref
50Ω
319 Ω
5 pF
Including
jig and
scope
353 Ω
OUTPUT
2.5V
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18

IS64WV6416BLL-15BLA3-TR

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Buy IS64WV6416BLL-15BLA3-TR
Manufacturer:
ISSI
Description:
SRAM 1Mb 15ns 64Kx16 Async SRAM
Lifecycle:
New from this manufacturer.
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