PESD5V0V1USF All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 1 — 16 July 2012 3 of 12
NXP Semiconductors
PESD5V0V1USF
Very low capacitance unidirectional ESD protection diode
5. Limiting values
[1] Device stressed with ten non-repetitive ESD pulses.
[2] Measured from pin 1 to pin 2.
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
T
j
junction temperature - 150 C
T
amb
ambient temperature 55 +150 C
T
stg
storage temperature 65 +150 C
Table 6. ESD maximum ratings
T
amb
=25
C unless otherwise specified.
Symbol Parameter Conditions Min Max Unit
V
ESD
electrostatic
discharge voltage
IEC 61000-4-2 (contact discharge)
[1][2]
-12kV
IEC 61000-4-2 (air discharge)
[1][2]
-12kV
machine model
[2]
- 400 V
MIL-STD-883 (human body model) - 10 kV
Table 7. ESD standards compliance
Standard Conditions
IEC 61000-4-2; level 4 (ESD) > 8 kV (contact)
MIL-STD-883; class 3B (human body model) > 8 kV
Fig 1. ESD pulse waveform according to IEC 61000-4-2
001aaa631
I
PP
100 %
90 %
t
30 ns
60 ns
10 %
t
r
= 0.7 ns to 1 ns
