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NTD95N02RT4

P1-P3P4-P6
© Semiconductor Components Industries, LLC, 2006
July, 2006 − Rev. 3
1 Publication Order Number:
NTD95N02R/D
NTD95N02R
Power MOSFET
95 Amps, 24 Volts
N−Channel DPAK
Features
• High Power and Current Handling Capability
• Fast Switching Performance
• Low R
DS(on)
to Minimize Conduction Loss
• Low Gate Charge to Minimize Switching Losses
• Pb−Free Packages are Available
Applications
• CPU Motherboard Vcore Applications
• High Frequency DC−DC Converters
• Motor Drives
• Bridge Circuits
MAXIMUM RATINGS (T
J
= 25°C unless otherwise specified)
Parameter Symbol Value Unit
Drain−to−Source Voltage V
DSS
24 V
Gate−to−Source Voltage V
GS
±20 V
Thermal Resistance, Junction−to−Case
Total Power Dissipation @ T
A
= 25°C
Drain Current –
− Continuous @ T
A
= 25°C, Limited by Package
− Continuous @ T
A
= 25°C, Limited by Wires
R
q
JC
P
D
I
D
I
D
1.45
86
95
32
°C/W
W
A
A
Thermal Resistance, Junction−to− Ambient
(Note 1)
− Total Power Dissipation @ T
A
= 25°C
− Drain Current − Continuous @ T
A
= 25°C
R
q
JA
P
D
I
D
52
2.4
15.8
°C/W
W
A
Thermal Resistance, Junction−to−Ambient
(Note 2)
− Total Power Dissipation @ T
A
= 25°C
− Drain Current − Continuous @ T
A
= 25°C
R
q
JA
P
D
I
D
100
1.25
12
°C/W
W
A
Operating Junction and Storage Temperature T
J
,
T
STG
−55 to
150
°C
Continuous Source Current (Body Diode) I
S
45 A
Single Pulse Drain−to−Source Avalanche
Energy – (V
DD
= 25 V, V
G
= 10, I
PK
= 13 A,
L = 1 mH, R
G
= 25 W)
E
AS
84 mJ
Lead Temperature for Soldering Purposes
(1/8 in from case for 10 seconds)
T
L
260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq
[1 oz] including traces).
2. Surface mounted on FR4 board using the minimum recommended pad size
(Cu area = 0.412 in sq).
http://onsemi.com
D
S
G
V
(BR)DSS
R
DS(ON)
TYP I
D
MAX*
24 V
4.5 mW @ 10 V
95 A
5.9 mW @ 4.5 V
*I
D
MAX in the product summary table is continuou
s
and steady at 25°C.
MARKING DIAGRAMS
& PIN ASSIGNMENTS
Y = Year
WW = Work Week
T95N02R = Device Code
G = Pb−Free Package
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
ORDERING INFORMATION
1
Gate
3
Source
2
Drain
4
Drain
DPAK
CASE 369AA
(Surface Mount)
STYLE 2
YWW
T95
N02RG
1
2
3
4
1
Gate
3
Source
2
Drain
4
Drain
DPAK
CASE 369D
(Straight Lead)
STYLE 2
1
2
3
4
YWW
T95
N02RG
NTD95N02R
http://onsemi.com
2
THERMAL RESISTANCE RATINGS
Parameter Symbol Value Unit
Junction−to−Case (Drain)
R
q
JC
1.45
°C/W
Junction−to−Ambient – Steady State (Note 3)
R
q
JA
52
Junction−to−Ambient – Steady State (Note 4)
R
q
JA
100
3. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces).
4. Surface mounted on FR4 board using the minimum recommended pad size (Cu area = 0.412 in sq).
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise noted)
Parameter Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage V
(BR)DSS
V
GS
= 0 V, I
D
= 250 mA
24 29 V
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
(BR)DSS
/T
J
15 mV/°C
Zero Gate Voltage Drain Current I
DSS
V
GS
= 0 V, V
DS
= 20 V
T
J
= 25°C 1.5
mA
T
J
= 125°C 10
Gate−to−Source Leakage I
GSS
V
DS
= 0 V, V
GS
= ±20 V ±100 nA
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage V
GS(TH)
V
GS
= V
DS
, I
D
= 250 mA
1.0 2.0 V
Negative Threshold Temperature
Coefficient
V
GS(TH)
/T
J
5.0 mV/°C
Drain−to−Source On−Resistance R
DS(on)
V
GS
= 4.5 V, I
D
= 10 A
5.9 8.0
mW
V
GS
= 10 V, I
D
= 20 A
4.5 5.0
Forward Transconductance gFS V
GS
= 10 V, I
D
= 10 A 30
S
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance C
ISS
V
GS
= 0 V, f = 1.0 MHz, V
DS
= 20 V
2400
pF
Output Capacitance C
OSS
1020
Reverse Transfer Capacitance C
RSS
390
Total Gate Charge
Q
T
V
GS
= 4.5 V, V
DS
= 10 V; I
D
= 10 A
21
nC
Q
GS
4.4
Q
GD
9.1
SWITCHING CHARACTERISTICS
Turn−on Delay Time t
d(on)
V
GS
= 10 V, V
DD
= 10 V,
I
D
= 30 A, R
G
= 3 W
10
ns
Rise Time t
r
82
Turn−off Time t
d(off)
26
Fall Time t
f
70
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage V
SD
V
GS
= 0 V, I
S
= 20 A T
J
= 25°C 0.83 1.2 V
Reverse Recovery Time t
RR
V
GS
= 0 V, d
ISD
/dt = 100 A/ms,
I
S
= 20 A
45
ns
Charge Time T
a
20
Discharge Time T
b
30
Reverse Recovery Charge Q
RR
50 nC
5. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
NTD95N02R
http://onsemi.com
3
TYPICAL CHARACTERISTICS
100
1000
10000
2 8 12 16 20
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
T
J
= 100°C
T
J
= 150°C
V
GS
= 0 V
100000
0
20
40
60
80
140
180
0246810
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
V
GS
= 10 V
200
5.0 V
4.0 V
3.6 V
3.4 V
3.2 V
3.0 V
2.8 V
4.2 V
2.4 V
7.0 V
2.6 V
T
J
= 25°C
Figure 1. On−Region Characteristics
0.009
34 6 8 10
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
Figure 2. Transfer Characteristics
Figure 3. On−Resistance versus
Gate−to−Source Voltage
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I
D
= 95 A
T
J
= 25°C
0.002
0.004
0.006
0.008
0.010
0.012
10 30 50 70 90 150
T
J
= 25°C
V
GS
= 4.5 V
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
I
D
, DRAIN CURRENT (A)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
0.6
0.8
1.0
1.2
1.4
1.6
−50 −25 0 25 50 75 100 125 150
Figure 5. On−Resistance Variation with
Temperature
T
J
, JUNCTION TEMPERATURE (°C)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE
(NORMALIZED)
Figure 6. Drain−to−Source Leakage Current
versus Voltage
I
DSS
, LEAKAGE (nA)
0
20
40
60
80
100
120
0123 6
T
J
= −55°C
T
J
= 25°C
T
J
= 100°C
V
DS
w 10 V
I
D
= 95 A
V
GS
= 10 V
0.007
0.006
0.005
0.004
0.003
I
D
, DRAIN CURRENT (A)
V
GS
= 10 V
170
0.008
579
110 130
0.014
0.016
1.8
61014184
100
120
160
13579 45
140
160
180
200
220
P1-P3P4-P6

NTD95N02RT4

Mfr. #:
Buy NTD95N02RT4
Manufacturer:
ON Semiconductor
Description:
MOSFET 24V 95A N-Channel
Lifecycle:
New from this manufacturer.
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