MBR3035PT, MBR3045PT, MBR3050PT, MBR3060PT
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Vishay General Semiconductor
Revision: 17-Aug-15
1
Document Number: 88676
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Dual Common Cathode Schottky Rectifier
FEATURES
• Power pack
• Guardring for overvoltage protection
• Lower power losses, high efficiency
• Low forward voltage drop
• High forward surge capability
• High frequency operation
• Solder dip 275 °C max., 10 s, per JESD 22-B106
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in low voltage, high frequency rectifier of switching
mode power supplies, freewheeling diodes, DC/DC
converters, or polarity protection application.
MECHANICAL DATA
Case: TO-247AD (TO-3P)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
Note
(1)
2.0 μs pulse width, f = 1.0 kHz
PRIMARY CHARACTERISTICS
I
F(AV)
30 A
V
RRM
35 V, 45 V, 50 V, 60 V
I
FSM
200 A
V
F
0.60 V, 0.65 V
T
J
max. 150 °C
Package TO-247AD (TO-3P)
Diode variations Common cathode
PIN 1
PIN 3
CASE
PIN 2
TO-247AD (TO-3P)
1
2
3
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL MBR3035PT MBR3045PT MBR3050PT MBR3060PT UNIT
Maximum repetitive peak reverse voltage V
RRM
35 45 50 60 V
Maximum working peak reverse voltage V
RWM
35 45 50 60 V
Maximum DC blocking voltage V
DC
35 45 50 60 V
Maximum average forward rectified current (fig. 1) I
F(AV)
30 A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
I
FSM
200 A
Peak repetitive reverse surge current at t
p
= 2 μs, 1 kHz
per diode
I
RRM
(1)
2.0 1.0 A
Voltage rate of change (rated V
R
) dV/dt 10 000 V/μs
Operating junction temperature range T
J
-65 to +150 °C
Storage temperature range T
STG
-65 to +175 °C
