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PMEG10020AELPX

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16
NXP Semiconductors
PMEG10020AELP
100 V, 2 A low leakage current Schottky barrier rectifier
PMEG10020AELP All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet 7 May 2015 6 / 15
10. Characteristics
Table 7. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
V
(BR)R
reverse breakdown
voltage
I
R
= 1 mA; T
j
= 25 °C; t
p
= 300 µs;
δ = 0.02
100 - - V
I
F
= 0.1 A; t
p
≤ 300 µs; δ ≤ 0.02;
T
j
= 25 °C
- 470 520 mV
I
F
= 0.5 A; t
p
≤ 300 µs; δ ≤ 0.02;
T
j
= 25 °C
- 580 630 mV
I
F
= 0.7 A; t
p
≤ 300 µs; δ ≤ 0.02;
T
j
= 25 °C
- 610 670 mV
I
F
= 1 A; t
p
≤ 300 µs; δ ≤ 0.02;
T
j
= 25 °C
- 650 710 mV
I
F
= 1.6 A; t
p
≤ 300 µs; δ ≤ 0.02;
T
j
= 25 °C
- 690 750 mV
I
F
= 2 A; t
p
≤ 300 µs; δ ≤ 0.02;
T
j
= 25 °C
- 710 770 mV
V
F
forward voltage
I
F
= 2 A; t
p
≤ 300 µs; δ ≤ 0.02;
T
j
= 125 °C
- 575 650 mV
V
R
= 10 V; t
p
≤ 300 µs; δ ≤ 0.02;
T
j
= 25 °C
- 10 - nA
V
R
= 60 V; t
p
≤ 300 µs; δ ≤ 0.02;
T
j
= 25 °C
- 25 - nA
V
R
= 100 V; t
p
≤ 300 µs; δ ≤ 0.02;
T
j
= 25 °C
- 70 300 nA
I
R
reverse current
V
R
= 100 V; t
p
≤ 300 µs; δ ≤ 0.02;
T
j
= 125 °C
- 120 1000 µA
V
R
= 1 V; f = 1 MHz; T
j
= 25 °C - 135 - pF
V
R
= 4 V; f = 1 MHz; T
j
= 25 °C - 80 - pF
C
d
diode capacitance
V
R
= 10 V; f = 1 MHz; T
j
= 25 °C - 50 - pF
t
rr
reverse recovery time I
F
= 0.5 A; I
R
= 0.5 A; I
R(meas)
= 0.1 A;
T
j
= 25 °C
- 5 - ns
V
FRM
peak forward recovery
voltage
I
F
= 0.5 A; dI
F
/dt = 20 A/µs; T
j
= 25 °C - 610 - mV
NXP Semiconductors
PMEG10020AELP
100 V, 2 A low leakage current Schottky barrier rectifier
PMEG10020AELP All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet 7 May 2015 7 / 15
aaa-015232
10
-2
10
-3
1
10
-1
10
I
F
(A)
10
-4
V
F
(V)
0.0 1.00.80.4 0.60.2
(1)
(2)
(3)
(5)(4) (6)
(1) T
j
= 175 °C
(2) T
j
= 150 °C
(3) T
j
= 125 °C
(4) T
j
= 85 °C
(5) T
j
= 25 °C
(6) T
j
= −40 °C
Fig. 4. Forward current as a function of forward
voltage; typical values
aaa-015233
10
-2
10
-3
10
-4
10
-5
10
-6
10
-7
10
-8
10
-9
10
-10
I
R
(A)
10
-11
V
R
(V)
0 1008040 6020
(1)
(2)
(3)
(5)
(4)
(6)
(1) T
j
= 175 °C
(2) T
j
= 150 °C
(3) T
j
= 125 °C
(4) T
j
= 85 °C
(5) T
j
= 25 °C
(6) T
j
= −40 °C
Fig. 5. Reverse current as a function of reverse
voltage; typical values
V
R
(V)
0 1008040 6020
aaa-015234
100
150
50
200
250
C
d
(pF)
0
f = 1 MHz; T
amb
= 25 °C
Fig. 6. Diode capacitance as a function of reverse
voltage; typical values
aaa-015236
I
F(AV)
(A)
0 321
0.8
0.4
1.2
1.6
P
F(AV)
(W)
0.0
(1)
(2)
(3)
(4)
T
j
= 175 °C
(1) δ = 0.1
(2) δ = 0.2
(3) δ = 0.5
(4) δ = 1
Fig. 7. Average forward power dissipation as a
function of average forward current; typical
values
NXP Semiconductors
PMEG10020AELP
100 V, 2 A low leakage current Schottky barrier rectifier
PMEG10020AELP All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet 7 May 2015 8 / 15
V
R
(V)
0 1008040 6020
aaa-016493
40
20
60
80
P
R(AV)
(mW)
0
(1)
(2)
(3)
(4)
T
j
= 150 °C
(1) δ = 1 (DC)
(2) δ = 0.5; f = 20 kHz
(3) δ = 0.2; f = 20 kHz
(4) δ = 0.1; f = 20 kHz
Fig. 8. Average reverse power dissipation as a
function of reverse voltage; typical values
T
amb
(°C)
0 20015050 100
aaa-016494
1
2
3
I
F(AV)
(A)
0
(1)
(3)
(4)
(2)
FR4 PCB, standard footprint
T
j
= 175 °C
(1) δ = 1; DC
(2) δ = 0.5; f = 20 kHz
(3) δ = 0.2; f = 20 kHz
(4) δ = 0.1; f = 20 kHz
Fig. 9. Average forward current as a function of
ambient temperature; typical values
T
amb
(°C)
0 20015050 100
aaa-016495
1
2
3
I
F(AV)
(A)
0
(1)
(3)
(4)
(2)
FR4 PCB, mounting pad for cathode 1 cm
2
T
j
= 175 °C
(1) δ = 1; DC
(2) δ = 0.5; f = 20 kHz
(3) δ = 0.2; f = 20 kHz
(4) δ = 0.1; f = 20 kHz
Fig. 10. Average forward current as a function of
ambient temperature; typical values
T
amb
(°C)
0 20015050 100
aaa-016496
1
2
3
I
F(AV)
(A)
0
(1)
(3)
(4)
(2)
Ceramic PCB, Al
2
O
3
, standard footprint
T
j
= 175 °C
(1) δ = 1; DC
(2) δ = 0.5; f = 20 kHz
(3) δ = 0.2; f = 20 kHz
(4) δ = 0.1; f = 20 kHz
Fig. 11. Average forward current as a function of
ambient temperature; typical values
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PMEG10020AELPX

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Manufacturer:
Nexperia
Description:
Schottky Diodes & Rectifiers 2A Schottky Barrier Rectifier
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