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MBR5H150VPA-G1

P1-P3P4-P6P7-P8
MBR5H150
Document number: DS36967 Rev. 4 - 2
4 of 8
www.diodes.com
October 2015
© Diodes Incorporated
MBR5H150
Maximum Ratings (Per Diode Leg) (Note 4)
Characteristic
Symbol
Rating
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
150
V
Average Rectified Forward Current (Rated V
R
, T
C
=
+150C)
I
F(AV)
5
A
Non Repetitive Peak Surge Current (Surge Applied at
Rated Load Conditions Half Wave, Single Phase, 60Hz)
I
FSM
125
A
Operating Junction Temperature Range (Note 5)
T
J
+175
C
Storage Temperature Range
T
STG
-55 to +175
C
Voltage Rate of Change (Rated V
R
)
dv/dt
10000
V/µs
ESD (Machine Model = C)
–
>400
V
ESD (Human Body Model = 3B)
–
>8000
V
Notes: 4. Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “Recommended Operating Conditions” is not implied.
Exposure to “Absolute Maximum Ratings” for extended periods may affect device reliability.
5. The heat generated must be less than the thermal conductivity from Junction to Ambient: dP
D
/dT
J
< 1/θ
JA
.
Thermal Characteristics
Characteristic
Symbol
Rating
Unit
Maximum Thermal Resistance (Junction to Case)
(Note 6)
Rθ
JC
10
o
C/W
Maximum Thermal Resistance (Junction to Ambient)
(Note 6)
Rθ
JA
40
Note 6: Device mounted on heat sink, with minimum recommended pad layout per http://www.diodes.com
Electrical Characteristics
Characteristic
Symbol
Rating
Unit
Test Condition
Maximum Instantaneous Forward Voltage Drop (Note 7)
V
F
0.92
V
I
F
= 5A, T
C
= +25C
Maximum Instantaneous Reverse Current (Note 7)
I
R
8.0
µA
Rated DC Voltage, T
C
= +25C
50.0
mA
Rated DC Voltage, T
C
= +150C
Note 7: Short duration pulse test used to minimize self-heating effect, Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%.
MBR5H150
Document number: DS36967 Rev. 4 - 2
5 of 8
www.diodes.com
October 2015
© Diodes Incorporated
MBR5H150
Figure 1. Typical Forward Characteristics Figure 2. Typical Reverse Characteristics
Figure 3. Average Rectified Forward Current vs. Figure 4. Average Rectified Forward Current vs.
Case Temperature Ambient Temperature
0.01
0.1
1
10
100
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
V
F
, Instantaneous Forward Voltage (V)
I
F
, Instantaneous Forward Current (A)
25
o
C
125
o
C
150
o
C
175
o
C
0 20 40 60 80 100 120 140 160
10000
1000
100
10
1
0.1
I
R
, Reverse Current (
A)
V
R
, Reverse Voltage (V)
25
o
C
125
o
C
150
o
C
175
o
C
0.001
0.01
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
120 125 130 135 140 145 150 155 160 165 170 175 180
Note 6
T
C
, Case Temperature (
o
C)
I
F(AV)
, Average Rectified Forword Current (A)
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
50 60 70 80 90 100 110 120 130 140 150 160 170 180
Note 6
T
A
, Ambient Temperature (
o
C)
I
F(AV)
, Average Rectified Forword Current (A)
MBR5H150
Document number: DS36967 Rev. 4 - 2
6 of 8
www.diodes.com
October 2015
© Diodes Incorporated
MBR5H150
Package Outline Dimensions (All dimensions in mm(inch).)
(1) Package Type: DO-27
25.400(1.000) MIN
25.400(1.000) MIN
1.300(0.051)
1.200(0.047)
8.500(0.335)
9.500(0.374)
5.000(0.197)
5.600(0.220)
DIA.
DIA.
Cathode line
by marking
P1-P3P4-P6P7-P8

MBR5H150VPA-G1

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Description:
Schottky Diodes & Rectifiers Schottky Rectifie
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