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Document Number: 74297
S-62449-Rev. A, 27-Nov-06
Vishay Siliconix
SUM52N20-39P
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS T
J
= 25 °C, unless otherwise noted
Parameter Symbol Test Conditions Min
Typ
Max Unit
Static
Drain-Source Breakdown Voltage
V
(BR)DSS
V
DS
= 0 V, I
D
= 250 µA
200
V
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250 µA
2.5 4.5
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
= ± 20 V
± 100
nA
V
DS
= 0 V, V
GS
= ± 25 V
± 300
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 200 V, V
GS
= 0 V
1
µA
V
DS
= 200 V, V
GS
= 0 V, T
J
= 100 °C
25
V
DS
= 200 V, V
GS
= 0 V, T
J
= 150 °C
250
On-State Drain Current
a
I
D(on)
V
DS
≥ 10 V, V
GS
= 10 V
50 A
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= 10 V, I
D
= 20 A
0.031 0.039
Ω
V
GS
= 15 V, I
D
= 20 A
0.0305 0.038
V
GS
= 10 V, I
D
= 20 A, T
J
= 100 °C
0.071
V
GS
= 10 V, I
D
= 20 A, T
J
= 150 °C
0.094
Forward Transconductance
a
g
fs
V
DS
= 15 V, I
D
= 20 A
25 S
Dynamic
b
Input Capacitance
C
iss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
4220
pFOutput Capacitance
C
oss
400
Reverse Transfer Capacitance
C
rss
185
Total Gate Charge
c
Q
g
V
DS
= 100 V, V
GS
= 15 V, I
D
= 50 A
123 185
nC
V
DS
= 100 V, V
GS
= 10 V, I
D
= 50 A
81 122
Gate-Source Charge
c
Q
gs
21
Gate-Drain Charge
c
Q
gd
27
Gate Resistance
R
g
f = 1 MHz 1.2 1.8 Ω
Tur n - O n D e l ay Time
c
t
d(on)
V
DD
= 100 V, R
L
= 2 Ω
I
D
≅ 50 A, V
GEN
= 10 V, R
g
= 1 Ω
18 30
ns
Rise Time
c
t
r
170 260
Turn-Off Delay Time
c
t
d(off)
34 51
Fall Time
c
t
f
918
Source-Drain Diode Ratings and Characteristics (T
C
= 25 °C)
b
Continuous Current
I
S
52
A
Pulsed Current
I
SM
100
Forward Voltage
a
V
SD
I
F
= 20 A, V
GS
= 0 V
0.86 1.5 V
Reverse Recovery Time
t
rr
I
F
= 40 A, di/dt = 100 A/µs
133 200 ns
Peak Reverse Recovery Current
I
RM(REC)
812A
Reverse Recovery Charge
Q
rr
0.54 0.81 µC
Reverse Recovery Fall Time
t
a
94
nS
Reverse Recovery Rise Time
t
b
39
