OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

CM150DX-24S

P1-P3P4-P6P7-P9P10-P10
< IGBT MODULES >
CM150DX-24S
HIGH POWER SWITCHING USE
INSULATED TYPE
Publication Date : December 2013
7
PERFORMANCE CURVES
INVERTER PART
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
V
CC
=600 V, V
GE
=±15 V, R
G
=0 Ω, INDUCTIVE LOAD
---------------: T
j
=150 °C, - - - - -: T
j
=125 °C
V
CC
=600 V, I
C
=150 A, V
GE
=±15 V, INDUCTIVE LOAD
---------------: T
j
=150 °C, - - - - -: T
j
=125 °C
SWITCHING TIME (ns)
10
100
1000
10 100 1000
SWITCHING TIME (ns)
10
100
1000
1 10 100
t
d(off)
t
d(off)
t
d(on)
t
r
t
d(on)
t
f
t
f
t
r
COLLECTOR CURRENT I
C
(A) EXTERNAL GATE RESISTANCE R
G
(Ω)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
V
CC
=600 V, V
GE
=±15 V, R
G
=0 Ω,
INDUCTIVE LOAD, PER PULSE
---------------: T
j
=150 °C, - - - - -: T
j
=125 °C
V
CC
=600 V, V
GE
=±15 V, I
C
/I
E
=150 A,
INDUCTIVE LOAD, PER PULSE
---------------: T
j
=150 °C, - - - - -: T
j
=125 °C
SWITCHING ENERGY (mJ)
REVERSE RECOVERY ENERGY (mJ)
1
10
100
10 100 1000
SWITCHING ENERGY (mJ)
REVERSE RECOVERY ENERGY (mJ)
1
10
100
0.1 1 10 100
COLLECTOR CURRENT I
C
(A)
EMITTER CURRENT I
E
(A)
EXTERNAL GATE RESISTANCE R
G
(Ω)
E
on
E
off
E
rr
E
on
E
off
E
rr
< IGBT MODULES >
CM150DX-24S
HIGH POWER SWITCHING USE
INSULATED TYPE
Publication Date : December 2013
8
PERFORMANCE CURVES
INVERTER PART
CAPACITANCE CHARACTERISTICS
(TYPICAL)
FREE WHEELING DIODE
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
G-E short-circuited, T
j
=25 °C
V
CC
=600 V, V
GE
=±15 V, R
G
=0 Ω, INDUCTIVE LOAD
---------------: T
j
=150 °C, - - - - -: T
j
=125 °C
CAPACITANCE (nF)
t
rr
(ns), I
rr
(A)
10
100
1000
10 100 1000
0.01
0.1
1
10
100
0.1 1 10 100
C
ies
t
rr
I
rr
C
oes
C
res
COLLECTOR-EMITTER VOLTAGE V
CE
(V) EMITTER CURRENT I
E
(A)
GATE CHARGE CHARACTERISTICS
(TYPICAL)
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS
(MAXIMUM)
V
CC
=600 V, I
C
=150 A, T
j
=25 °C
Single pulse, T
C
=25 °C
R
th(j-c)Q
=0.13 K/W, R
th(j-c)D
=0.23 K/W
GATE-EMITTER VOLTAGE V
GE
(V)
NORMALIZED TRANSIENT THERMAL RESISTANCE
Z
th(j-c)
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10
0
5
10
15
20
0 100 200 3 00 400 500
GATE CHARGE Q
G
(nC) TIME (S)
< IGBT MODULES >
CM150DX-24S
HIGH POWER SWITCHING USE
INSULA
TED TYPE
Publication Date : December 2013
9
PERFORMANCE CURVES
NTC thermistor part
TEMPERATURE CHARACTERISTICS
(TYPICAL)
RESISTANCE R (kΩ)
0.1
1
10
100
-50 -25 0 25 50 75 100 125
TEMPERATURE T (°C)
P1-P3P4-P6P7-P9P10-P10

CM150DX-24S

Mfr. #:
Buy CM150DX-24S
Manufacturer:
Description:
IGBT MODULE DUAL 150A 1200V
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet