NUD3048
http://onsemi.com
2
MAXIMUM RATINGS
Symbol Rating Value Unit
V
DSS
Drain to Source Voltage – Continuous 100 V
V
G1SS
Gate to Source Voltage – Continuous @ 1.0 mA 15 V
I
D
Drain Current – Continuous (T
A
=25_C) (Note 1)
(Note 2)
0.7
1.2
A
P
D
Power Dissipation (T
A
=25_C) (Note 1)
(Note 2)
0.66
1.56
W
V
G2SS
Gate Resistor to Source Voltage – Continuous 100 V
T
Jmax
Maximum Junction Temperature 150 °C
R
q
JA
Thermal Impedance (Junction−to−Ambient) (Note 1)
Thermal Impedance (Junction−to−Ambient) (Note 2)
190
80
°C/W
ESD Human Body Model (HBM) Class 2
Machine Model Class A
According to EIA/JESD22/A114 Specification
2000
160
V
V
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
ELECTRICAL CHARACTERISTICS (T
J
=25_C unless otherwise noted.)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain to Source Leakage Current (V
DS
= 80 V, V
GS
= 0 V) I
DSS
− 20 100 mA
Gate Body Leakage Current
(V
GS
=10 V, V
DS
= 0 V)
(V
GS
= 10 V, V
DS
= 0 V, T
J
= 125°C)
I
GSS
I
GSS
−
−
3.0
6.0
10
20
mA
ON CHARACTERISTICS
Gate Threshold Voltage (I
D
= 1.0 mA) V
GS
1.3 1.7 2.0 V
Drain to Source Resistance (V
GS
= 4.5 V, I
D
= 100 mA) R
DS(on)
− 0.65 0.82 W
Drain to Source Resistance (V
GS
= 10 V, I
D
= 100 mA) R
DS(on)
− 0.6 0.72 W
DYNAMIC CHARACTERISTICS
Input Capacitance (V
DS
= 5.0 V, V
GS
= 0 V, f = 10 kHz) C
iss
− 135 − pF
Output Capacitance (V
DS
= 5.0 V, V
GS
= 0 V, f = 10 kHz) C
oss
− 75 − pF
Transfer Capacitance (V
DS
= 5.0 V, V
GS
= 0 V, f = 10 kHz) C
rss
− 26 − pF
GATE BIAS CHARACTERISTICS
Gate Resistor R
G
75 100 125 kW
Gate Zener Breakdown Voltage (I
Z
= 1.0 mA) (Note 3)
Gate Zener Breakdown Voltage (I
Z
= 3.0 mA) (Note 4)
V
Z
15
100
17
115
−
−
V
1. Min pad, 1 oz. Cu.
2. 1 inch pad, 1 oz Cu.
3. Measured from gate 1 to source.
4. Measured from gate 2 to source.
