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IXTT96N20P

P1-P3P4-P5
© 2006 IXYS All rights reserved
Symbol Test Conditions Maximum Ratings
V
DSS
T
J
= 25° C to 150° C 200 V
V
DGR
T
J
= 25° C to 150° C; R
GS
= 1 MΩ 200 V
V
GSS
Continous ±20 V
V
GSM
Transient ±30 V
I
D25
T
C
= 25° C96A
I
D(RMS)
External lead current limit 75 A
I
DM
T
C
= 25° C, pulse width limited by T
JM
225 A
I
AR
T
C
= 25° C60A
E
AR
T
C
= 25° C50mJ
E
AS
T
C
= 25° C 1.5 J
dv/dt I
S
≤ I
DM
, di/dt ≤ 100 A/µs, V
DD
≤ V
DSS
, 10 V/ns
T
J
≤ 150° C, R
G
= 4 Ω
P
D
T
C
= 25° C 600 W
T
J
-55 ... +175 °C
T
JM
175 °C
T
stg
-55 ... +150 °C
T
L
1.6 mm (0.062 in.) from case for 10 s 300 °C
T
SOLD
Plastic body for 10 s 260 °C
M
d
Mounting torque (TO-3P, TO-247) 1.13/10 Nm/lb.in.
Weight TO-3P 5.5 g
TO-247 6.0 g
TO-268 5.0 g
G = Gate D = Drain
S = Source TAB = Drain
DS99117E(10/05)
Symbol Test Conditions Characteristic Values
(T
J
= 25° C, unless otherwise specified) Min. Typ. Max.
BV
DSS
V
GS
= 0 V, I
D
= 250 µA 200 V
V
GS(th)
V
DS
= V
GS
, I
D
= 250µA 2.5 5.0 V
I
GSS
V
GS
= ±20 V
DC
, V
DS
= 0 ±100 nA
I
DSS
V
DS
= V
DSS
25 µA
V
GS
= 0 V T
J
= 150° C 250 µA
R
DS(on)
V
GS
= 10 V, I
D
= 0.5 I
D25
24 m Ω
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
PolarHT
TM
Power MOSFET
IXTH 96N20P V
DSS
= 200 V
IXTQ 96N20P I
D25
= 96 A
IXTT 96N20P R
DS(on)
≤ ≤
≤ ≤
≤ 24 m
ΩΩ
ΩΩ
Ω
N-Channel Enhancement Mode
Avalanche Rated
Features
l
International standard packages
l
Unclamped Inductive Switching (UIS)
rated
l
Low package inductance
- easy to drive and to protect
Advantages
l
Easy to mount
l
Space savings
l
High power density
TO-3P (IXTQ)
G
D
S
TO-268 (IXTT)
G
S
D (TAB)
G
D
S
TO-247 (IXTH)
(TAB)
(TAB)
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTH 96N20P IXTQ 96N20P
IXTT 96N20P
Symbol Test Conditions Characteristic Values
(T
J
= 25° C, unless otherwise specified)
Min. Typ. Max.
g
fs
V
DS
= 10 V; I
D
= 0.5 I
D25
, pulse test 40 52 S
C
iss
4800 pF
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz 1020 pF
C
rss
270 pF
t
d(on)
28 ns
t
r
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= I
D25
30 ns
t
d(off)
R
G
= 4 Ω (External) 75 ns
t
f
30 ns
Q
g(on)
145 nC
Q
gs
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
30 nC
Q
gd
80 nC
R
thJC
0.25° C/W
R
thCS
(TO-3P, TO-247) 0.21 ° C/W
Source-Drain Diode Characteristic Values
(T
J
= 25° C, unless otherwise specified)
Symbol Test Conditions Min. Typ. Max.
I
S
V
GS
= 0 V 96 A
I
SM
Repetitive 240 A
V
SD
I
F
= I
S
, V
GS
= 0 V, 1.5 V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
t
rr
I
F
= 25 A, -di/dt = 100 A/µs 160 ns
Q
RM
V
R
= 100 V, V
GS
= 0 V 3.0 µC
TO-268 (IXTT) Outline
TO-3P (IXTQ) Outline
TO-247 (IXTH) Outline
Terminals: 1 - Gate 2 - Drain
3 - Source Tab - Drain
1 2 3
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A
1
2.2 2.54 .087 .102
A
2
2.2 2.6 .059 .098
b 1.0 1.4 .040 .055
b
1
1.65 2.13 .065 .084
b
2
2.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585
one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6771478 B2
© 2006 IXYS All rights reserved
IXTH 96N20P IXTQ 96N20P
IXTT 96N20P
Fig. 2. Extende d Output Characteristics
@ 25
º
C
0
25
50
75
100
125
150
175
200
225
250
0 2 4 6 8 101214161820
V
D S
- Volts
I
D
- Amperes
V
GS
= 10V
7V
6V
8V
9V
Fig. 3. Output Characteristics
@ 150
º
C
0
10
20
30
40
50
60
70
80
90
100
01234567
V
D S
- Volts
I
D
- Amperes
V
GS
= 10V
9V
5V
6V
7V
8V
Fig. 1. Output Characteristics
@ 25
º
C
0
10
20
30
40
50
60
70
80
90
100
0 0.5 1 1.5 2 2.5 3
V
D S
- Volts
I
D
- Amperes
V
GS
= 10V
9V
7V
6V
8V
Fig. 4. R
DS(on
)
Norm alize d to 0.5 I
D25
Value vs. Junction Tem perature
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
2.8
3
-50 -25 0 25 50 75 100 125 150 175
T
J
- Degrees Centigrade
R
D S ( o n )
- Normalized
I
D
= 96A
I
D
= 48A
V
GS
= 10V
Fig. 6. Drain Curre nt vs. Case
Tem perature
0
10
20
30
40
50
60
70
80
90
-50 -25 0 25 50 75 100 125 150 175
T
C
- Degrees Centigrade
I
D
- Amperes
External Lead Current Limit
Fig. 5. R
DS(on)
Norm alized to
0.5 I
D25
Value vs. I
D
0.7
1
1.3
1.6
1.9
2.2
2.5
2.8
3.1
3.4
3.7
4
4.3
0 25 50 75 100 125 150 175 200 225 250
I
D
- Amperes
R
D S ( o n )
- Normalized
T
J
= 125ºC
T
J
= 25ºC
V
GS
= 10V
T
J
= 175ºC
P1-P3P4-P5

IXTT96N20P

Mfr. #:
Buy IXTT96N20P
Manufacturer:
Littelfuse
Description:
MOSFET 96 Amps 200V 0.024 Rds
Lifecycle:
New from this manufacturer.
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