APT2X61DQ60J Datasheet APT2X61DQ60J | P1-P3

PRODUCT BENEFITS

• Low Losses

• Low Noise Switching

• Cooler Operation

• Higher Reliability Systems

• Increased System Power

Density

PRODUCT FEATURES

• Ultrafast Recovery Times

• Soft Recovery Characteristics

• Popular SOT-227 Package

• Low Forward Voltage

• High Blocking Voltage

• Low Leakage Current

• Avalanche Energy Rated

PRODUCT APPLICATIONS

• Anti-Parallel Diode

-Switchmode Power Supply

-Inverters

• Free Wheeling Diode

-Motor Controllers

-Converters

• Snubber Diode

• Uninterruptible Power Supply (UPS)

• Induction Heating

• High Speed Rectiﬁers

ULTRAFAST SOFT RECOVERY RECTIFIER DIODE

APT2x61DQ60J 600V 60A

APT2x60DQ60J 600V 60A

053-4207 Rev E 7-2006

New Diode Data Sheet By Darel Bidwell

Anti-Parallel Parallel

2

1

32 3

41 4

APT2x60DQ60J APT2x61DQ60J

STATIC ELECTRICAL CHARACTERISTICS

Symbol

V

F

I

RM

C

T

UNIT

Volts

µA

pF

MIN TYP MAX

1.7 2.3

2.0

1.4

25

500

145

Characteristic / Test Conditions

Forward Voltage

Maximum Reverse Leakage Current

Junction Capacitance, V

R

= 200V

I

F

= 60A

I

F

= 120A

I

F

= 60A, T

J

= 125°C

V

R

= 600V

V

R

= 600V, T

J

= 125°C

DUAL DIE ISOTOP

®

PACKAGE

MAXIMUM RATINGS All Ratings: T

C

= 25°C unless otherwise speciﬁed.

Characteristic / Test Conditions

Maximum D.C. Reverse Voltage

Maximum Peak Repetitive Reverse Voltage

Maximum Working Peak Reverse Voltage

Maximum Average Forward Current (T

C

= 92°C, Duty Cycle = 0.5)

RMS Forward Current (Square wave, 50% duty)

Non-Repetitive Forward Surge Current (T

J

= 45°C, 8.3ms)

Avalanche Energy (1A, 40mH)

Operating and StorageTemperature Range

Symbol

V

R

V

RRM

V

RWM

I

F(AV)

I

F(RMS)

I

FSM

E

AVL

T

J

,T

STG

UNIT

Volts

Amps

mJ

°C

APT2x61_60DQ60J

600

60

79

600

20

-55 to 175

Microsemi Website - http://www.microsemi.com

S

O

T

-

2

7

ISOTOP

®

1

2

3

4

file # E145592

"UL Recognized"

APT2x61_60DQ60J

DYNAMIC CHARACTERISTICS

053-4207 Rev E 7-2006

New Diode Data Sheet By Darel Bidwell

Z

θ

JC

, THERMAL IMPEDANCE (°C/W)

10

-5

10

-4

10

-3

10

-2

10

-1

1.0

RECTANGULAR PULSE DURATION (seconds)

FIGURE 1a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION

0.70

0.60

0.50

0.40

0.30

0.20

0.10

0

0.5

SINGLE PULSE

0.1

0.3

0.7

0.05

FIGURE 1b, TRANSIENT THERMAL IMPEDANCE MODEL

Peak T

J

= P

DM

x Z

θJC

+

T

C

Duty Factor D =

t

1

/

t

2

t

2

t

1

P

DM

Note:

MIN TYP MAX

- 160

- 70

- 100

- 4 -

-

140

- 690

-

9 -

- 80

- 1540

- 31

UNIT

ns

nC

Amps

ns

nC

Amps

ns

nC

Amps

Characteristic

Reverse Recovery Time

Reverse Recovery Charge

Maximum Reverse Recovery Current

Reverse Recovery Time

Reverse Recovery Charge

Maximum Reverse Recovery Current

Reverse Recovery Time

Reverse Recovery Charge

Maximum Reverse Recovery Current

Symbol

t

rr

t

rr

Q

rr

I

RRM

t

rr

Q

rr

I

RRM

t

rr

Q

rr

I

RRM

Test Conditions

I

F

= 60A, di

F

/dt = -200A/µs

V

R

= 400V, T

C

= 25°C

I

F

= 60A, di

F

/dt = -200A/µs

V

R

= 400V, T

C

= 125°C

I

F

= 60A, di

F

/dt = -1000A/µs

V

R

= 400V, T

C

= 125°C

I

F

= 1A, di

F

/dt = -100A/µs, V

R

= 30V, T

J

= 25°C

THERMAL AND MECHANICAL CHARACTERISTICS

Characteristic / Test Conditions

Junction-to-Case Thermal Resistance

RMS Voltage (50-60hHz Sinusoidal Wavefomr Ffrom Terminals to Mounting Base for 1 Min.)

Package Weight

Maximum Mounting Torque

Symbol

R

θJC

V

Isolation

W

T

Torque

MIN TYP MAX

.60

2500

1.03

29.2

10

1.1

UNIT

°C/W

Volts

oz

g

lb•in

N•m

D = 0.9

Microsemi reserves the right to change, without notice, the speciﬁcations and information contained herein.

0.159 0.255 0.186

0.0056 0.0849 0.489

Dissipated Powe

r

(Watts)

T

J

(°C) T

C

(°C)

Z

EXT

are the external thermal

impedances: Case to sink,

sink to ambient, etc. Set to

zero when modeling onl

y

the case to junction.

Z

EXT

053-4207 Rev E 7-2006

APT2x61_60DQ60J

TYPICAL PERFORMANCE CURVES

T

J

= 125°C

V

R

= 400V

30A

60A

120A

160

140

120

100

80

60

40

20

0

60

50

40

30

20

10

0

Duty cycle = 0.5

T

J

= 175°C

100

80

60

40

20

0

1.2

1.0

0.8

0.6

0.4

0.2

0.0

600

500

400

300

200

100

0

C

J

, JUNCTION CAPACITANCE K

f

, DYNAMIC PARAMETERS

(pF) (Normalized to 1000A/

µs)

I

F(AV)

(A)

T

J

, JUNCTION TEMPERATURE (°C) Case Temperature (°C)

Figure 6. Dynamic Parameters vs. Junction Temperature Figure 7. Maximum Average Forward Current vs. CaseTemperature

V

R

, REVERSE VOLTAGE (V)

Figure 8. Junction Capacitance vs. Reverse Voltage

200

180

160

140

120

100

80

60

40

20

0

2500

2000

1500

1000

500

0

V

F

, ANODE-TO-CATHODE VOLTAGE (V) -di

F

/dt, CURRENT RATE OF CHANGE(A/µs)

Figure 2. Forward Current vs. Forward Voltage Figure 3. Reverse Recovery Time vs. Current Rate of Change

-di

F

/dt, CURRENT RATE OF CHANGE (A/µs) -di

F

/dt, CURRENT RATE OF CHANGE (A/µs)

Figure 4. Reverse Recovery Charge vs. Current Rate of Change Figure 5. Reverse Recovery Current vs. Current Rate of Change

Q

rr

, REVERSE RECOVERY CHARGE I

F

, FORWARD CURRENT

(nC) (A)

I

RRM

, REVERSE RECOVERY CURRENT t

rr

, REVERSE RECOVERY TIME

(A) (ns)

T

J

= 175°C

T

J

= -55°C

T

J

= 25°C

T

J

= 125°C

T

J

= 125°C

V

R

= 400V

60A

30A

120A

0 0.5 1.0 1.5 2.0 2.5 0 200 400 600 800 1000 1200 1400 1600

0 200 400 600 800 1000 1200 1400 1600 0 200 400 600 800 1000 1200 1400 1600

T

J

= 125°C

V

R

= 400V

120A

60A

30A

t

rr

Q

rr

Q

rr

t

rr

I

RRM

0 25 50 75 100 125 150 25 50 75 100 125 150 175

1 10 100 200

APT2X61DQ60J

APT2X61DQ60J

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