Expand menu
Hello, Sign in
My Account
0
Cart
Home
Products
Sensors
Semiconductors
Passive Components
Connectors
Power
Electromechanical
Optoelectronics
Circuit Protection
Integrated Circuits - ICs
Main Products
Manufacturers
Blog
Services
About OMO
About Us
Contact Us
Check Stock
IKP10N60TXKSA1
P1-P3
P4-P6
P7-P9
P10-P12
P13-P13
IKP10N60T
TRENCHSTOP
™
Series
p
IFAG IPC TD VLS
7
Rev. 2
.6
11
.0
5.2015
E
,
SWITCHING ENERG
Y LOSSES
0A
5A
10A
15A
0
,
0
m
J
0
,
2
m
J
0
,
4
m
J
0
,
6
m
J
0
,
8
m
J
1
,
0
m
J
E
ts
*
E
o
f
f
*
)
E
on
a
n
d
E
ts
in
c
lu
d
e
lo
s
s
e
s
d
u
e
t
o
d
io
d
e
r
e
c
o
v
e
r
y
E
on
*
E
,
SWITCHING ENERG
Y LOSSES
0
,
0
m
J
0
,
2
m
J
0
,
4
m
J
0
,
6
m
J
0
,
8
m
J
E
ts
*
E
on
*
*
)
E
on
a
n
d
E
ts
i
n
c
l
u
d
e
l
o
s
s
e
s
d
u
e
t
o
d
i
o
d
e
r
e
c
o
v
e
r
y
E
o
f
f
I
C
,
COLLECTOR CU
RRENT
R
G
,
GATE RESISTOR
Figure
13
.
Typical switching
energy losses
as a function of collector
current
(inductive load,
T
J
= 175°C,
V
CE
= 400V, V
GE
= 0/15V,
r
G
=
23
Ω,
Dy
nam
ic test circuit in Figure
E)
Figure
14
. Typical switchi
ng energy losses
as a function of gate re
sistor
(inductive load,
T
J
= 175°C,
V
CE
= 400V, V
GE
= 0/15V,
I
C
=
10
A,
Dynamic test c
ircuit in Figure E)
E
,
SWITCHING ENERG
Y LOSSES
5
0
°
C
1
0
0
°
C
1
5
0
°
C
0
,
0
m
J
0
,
1
m
J
0
,
2
m
J
0
,
3
m
J
0
,
4
m
J
0
,
5
m
J
0
,
6
m
J
E
ts
*
E
on
*
*
)
E
on
a
n
d
E
ts
i
n
c
lu
d
e
l
o
s
s
e
s
d
u
e
t
o
d
i
o
d
e
r
e
c
o
v
e
r
y
E
o
f
f
E
,
SWITCHING ENERG
Y LOSSES
300V
350V
400V
450V
500V
550V
0
,
0
m
J
0
,
2
m
J
0
,
4
m
J
0
,
6
m
J
0
,
8
m
J
E
ts
*
E
on
*
*
)
E
on
a
n
d
E
ts
i
n
c
l
u
d
e
l
o
s
s
e
s
d
u
e
t
o
d
i
o
d
e
r
e
c
o
v
e
r
y
E
o
f
f
T
J
,
JUNCTION TEMPER
ATURE
V
CE
,
COLLECTOR
-
EMITTER VO
LTAGE
Figure
15
.
Typical switching
energy losses
as a function of junction
temperature
(inductive load,
V
CE
= 400V,
V
GE
= 0/15V,
I
C
= 10
A,
r
G
=
23
Ω,
Dynamic test c
ircuit in Figure E)
Figure
16
.
Typical switchin
g energy losses
as a function of collector
emitter
voltage
(inductive load,
T
J
= 175°C,
V
GE
= 0/15V,
I
C
=
10
A,
r
G
=
23
Ω,
Dynamic
test circuit in Figure E)
IKP10N60T
TRENCHSTOP
™
Series
p
IFAG IPC TD VLS
8
Rev. 2
.6
11
.0
5.2015
V
GE
,
GATE
-
EMITTER VOLTAG
E
0nC
20nC
40nC
60nC
0V
5V
10V
15V
480V
120V
c,
CAPACIT
ANCE
0V
10V
20V
10pF
100pF
1nF
C
rs
s
C
o
s
s
C
is
s
Q
GE
,
GATE CHARGE
V
CE
,
COLLECTOR
-
EMITTER VO
LTAGE
Figure
17
.
Typical gate charge
(
I
C
=10
A)
Figure
18
.
Typical capacitance as
a function
of collector-emit
ter voltage
(
V
GE
=0V,
f
= 1 MH
z)
I
C(sc)
, short circuit
COLLECTOR CURRENT
12V
14V
16V
18V
0A
25A
50A
75A
100A
125A
150A
t
SC
,
SHORT CIRCUIT WI
THSTAND TIME
10V
11V
12V
13V
14V
0
µ
s
2
µ
s
4
µ
s
6
µ
s
8
µ
s
1
0
µ
s
1
2
µ
s
V
GE
,
GATE
-
EMITTETR VOL
TAGE
V
GE
,
GATE
-
EMITETR VOLTAG
E
Figure
19
.
Typical short circuit col
lector
current as a function
of gate-
emitter voltage
(
V
CE
400V,
T
j
150
C)
Figure
20
.
Short circuit with
stand time as
a
function of gate
-emitter voltage
(
V
CE
=4
00V
,
start at
T
J
=
25°C,
T
Jmax
<150°C)
IKP10N60T
TRENCHSTOP
™
Series
p
IFAG IPC TD VLS
9
Rev. 2
.6
11
.0
5.2015
Z
thJC
,
TRANSIENT THERM
AL IMPEDANCE
1
0
µ
s
1
0
0
µ
s
1
m
s
1
0
m
s
1
0
0
m
s
10
-2
K
/
W
10
-1
K
/
W
10
0
K
/
W
s
i
n
g
l
e
p
u
ls
e
0
.
0
1
0
.
0
2
0
.
0
5
0
.
1
0
.
2
D
=
0
.
5
Z
thJC
,
TRANSIENT THERM
AL IMPEDANCE
1
µ
s
1
0
µ
s
1
0
0
µ
s
1
m
s
1
0
m
s
1
0
0
m
s
10
-2
K
/
W
10
-1
K
/
W
10
0
K
/
W
s
i
n
g
l
e
p
u
ls
e
0
.
0
1
0
.
0
2
0
.
0
5
0
.
1
0
.
2
D
=
0
.
5
t
P
,
PULSE WIDTH
t
P
,
PULSE WIDTH
Figure
21
.
IGBT transient thermal
impedance
(
D = t
p
/
T
)
Figure
22
.
Diode transient therm
al
impedance as a functio
n of pulse
width
(
D
=
t
P
/
T
)
t
rr
,
REVERSE RECOV
ERY TIME
2
0
0
A
/
µ
s
4
0
0
A
/
µ
s
6
0
0
A
/
µ
s
8
0
0
A
/
µ
s
0ns
50ns
100ns
150ns
200ns
250ns
300ns
T
J
=
2
5
°
C
T
J
=
1
7
5
°
C
Q
rr
,
RE
VERSE RECOVERY
CHARGE
2
0
0
A
/
µ
s
4
0
0
A
/
µ
s
6
0
0
A
/
µ
s
8
0
0
A
/
µ
s
0
,0
µ
C
0
,1
µ
C
0
,2
µ
C
0
,3
µ
C
0
,4
µ
C
0
,5
µ
C
0
,6
µ
C
0
,7
µ
C
0
,8
µ
C
T
J
=
2
5
°
C
T
J
=
1
7
5
°
C
di
F
/dt
,
DIODE CURRENT SLOP
E
di
F
/dt
,
DIODE CURRENT SLOP
E
Figure
23
.
Typical reverse recov
ery time as
a function of diode cur
rent slope
(
V
R
=400V,
I
F
=10A,
Dynamic test c
ircuit in Figure E)
Figure
24
.
Typical reverse recov
ery charge
as a function of diode cur
rent
slope
(
V
R
= 400V,
I
F
= 10A,
Dynamic test c
ircuit in Figure E)
R
,
(
K
/
W
)
,
(
s
)
0.2911
6.53*10
-2
0.4092
8.33*10
-3
0.5008
7.37*10
-4
0.1529
7.63*10
-5
C
1
=
1
/
R
1
R
1
R
2
C
2
=
2
/
R
2
R
,
(
K
/
W
)
,
(
s
)
0.3169
4.629*10
-2
6.53*10
-2
0.4734
7.07*10
-3
0.6662
1.068*10
-3
0.4398
1.253*10
-4
C
1
=
1
/
R
1
R
1
R
2
C
2
=
2
/
R
2
P1-P3
P4-P6
P7-P9
P10-P12
P13-P13
IKP10N60TXKSA1
Mfr. #:
Buy IKP10N60TXKSA1
Manufacturer:
Infineon Technologies
Description:
IGBT Transistors LOW LOSS DuoPack 600V 10A
Lifecycle:
New from this manufacturer.
Delivery:
DHL
FedEx
Ups
TNT
EMS
Payment:
T/T
Paypal
Visa
MoneyGram
Western
Union
Products related to this Datasheet
IKP10N60TXKSA1
