©2000 Fairchild Semiconductor International Rev. A, February 2000
KSB744/744A
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
* PW≤10ms, Duty Cycle≤50%
Electrical Characteristics
T
C
=25°C unless otherwise noted
* Pulse Test: PW≤350µs, Duty Cycle≤2% Pulsed
h
FE
Cassification
Symbol Parameter Value Units
V
CBO
Collector-Base Voltage -70 V
V
CEO
Collector-Emitter Voltage : KSB744
: KSB744A
-45
-60
V
V
V
EBO
Emitter-Base Voltage -5 V
I
C
Collector Current (DC) -3 A
I
CP
*Collector Current (Pulse) -5 A
I
B
Base Current -0.6 A
P
C
Collector Dissipation (T
a
=25°C) 1 W
P
C
Collector Dissipation (T
C
=25°C) 10 W
TJ Junction Temperature 150 °C
T
STG
Storage Temperature -55 ~ 150 °C
Symbol Parameter Test Condition Min. Typ. Max. Units
I
CBO
Collector Cut-off Current V
CB
= -45V, I
E
= 0 -1 µA
I
EBO
Emitter Cut-off Current V
EB
= -3V, I
C
= 0 -1 µA
h
FE1
h
FE2
* DC Current Gain V
CE
= -5V, I
C
= -20mA
V
CE
= -5V, I
C
= -0.5A
30
60
120
100 320
V
CE
(sat) * Collector-Emitter Saturation Voltage I
C
= -1.5A, I
C
= -0.15A -0.5 -2 V
V
BE
(sat) * Base-Emitter Saturation Voltage I
C
= -1.5A, I
B
= -0.15A -0.8 -2 V
f
T
Current Gain Bandwidth Product V
CE
= -5V, I
C
= -0.1A 45 MHz
C
ob
Output Capacitance V
CB
= -10V, I
E
= 0
f = 1MHz
60 pF
Classification R O Y
h
FE2
60 ~ 120 100 ~ 200 160 ~ 320
KSB744/744A
Audio Frequency Power Amplifier
• Complement to KSD794/KSD794A
1
TO-126
1. Emitter 2.Collector 3.Base
