PMEG3002TV_2 © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 02 — 15 January 2010 3 of 10
NXP Semiconductors
PMEG3002TV
0.2 A very low V
F
MEGA Schottky barrier dual rectifier
5. Limiting values
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm
2
.
6. Thermal characteristics
[1] For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse
power losses P
R
are a significant part of the total power losses. Nomograms for determining the reverse
power losses P
R
and I
F(AV)
rating are available on request.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm
2
.
[4] Soldering point of cathode tab.
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
Per diode
V
R
reverse voltage - 30 V
I
F
forward current T
amb
≤ 25 °C
[1]
-0.2A
I
FRM
repetitive peak forward current t
p
≤ 1 ms; δ≤0.25 - 1 A
I
FSM
non-repetitive peak forward
current
square wave;
t
p
=8ms
[1]
-2.5A
P
tot
total power dissipation T
amb
≤ 25 °C
[1]
- 200 mW
[2]
- 300 mW
Per device
P
tot
total power dissipation T
amb
≤ 25 °C
[1]
- 300 mW
[2]
- 400 mW
T
j
junction temperature - 150 °C
T
amb
ambient temperature −65 +150 °C
T
stg
storage temperature −65 +150 °C
Table 7. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Per device
R
th(j-a)
thermal resistance from
junction to ambient
in free air
[1][2]
- - 416 K/W
[1][3]
- - 318 K/W
R
th(j-sp)
thermal resistance from
junction to solder point
[4]
- - 195 K/W
