MAC97A6RLRPG

© Semiconductor Components Industries, LLC, 2013
August, 2013 Rev. 10
1 Publication Order Number:
MAC97/D
MAC97 Series
Sensitive Gate Triacs
Silicon Bidirectional Thyristors
Designed for use in solid state relays, MPU interface, TTL logic and
any other light industrial or consumer application. Supplied in an
inexpensive TO92 package which is readily adaptable for use in
automatic insertion equipment.
Features
OnePiece, InjectionMolded Package
Blocking Voltage to 600 Volts
Sensitive Gate Triggering in Four Trigger Modes (Quadrants) for all
possible Combinations of Trigger Sources, and especially for Circuits
that Source Gate Drives
All Diffused and Glassivated Junctions for Maximum Uniformity of
Parameters and Reliability
These are PbFree Devices*
MAXIMUM RATINGS (T
J
= 25°C unless otherwise noted)
Rating Symbol Value Unit
Peak Repetitive Off-State Voltage
(T
J
= 40 to +110°C) (Note 1)
Sine Wave 50 to 60 Hz, Gate Open
MAC97A4
MAC97A6
MAC97A8
V
DRM,
V
RRM
200
400
600
V
On-State RMS Current
Full Cycle Sine Wave 50 to 60 Hz
(T
C
= +50°C)
I
T(RMS)
0.6 A
Peak NonRepetitive Surge Current
One Full Cycle, Sine Wave 60 Hz
(T
C
= 110°C)
I
TSM
8.0 A
Circuit Fusing Considerations (t = 8.3 ms) I
2
t 0.26 A
2
s
Peak Gate Voltage
(t v 2.0 ms, T
C
= +80°C)
V
GM
5.0 V
Peak Gate Power
(t v 2.0 ms, T
C
= +80°C)
P
GM
5.0 W
Average Gate Power
(T
C
= 80°C, t v 8.3 ms)
P
G(AV)
0.1 W
Peak Gate Current
(t v 2.0 ms, T
C
= +80°C)
I
GM
1.0 A
Operating Junction Temperature Range T
J
40 to +110 °C
Storage Temperature Range T
stg
40 to +150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. V
DRM
and V
RRM
for all types can be applied on a continuous basis. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
TRIACS
0.8 AMPERE RMS
200 thru 600 VOLTS
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
ORDERING INFORMATION
MT1
G
MT2
TO92 (TO226)
CASE 029
STYLE 12
PIN ASSIGNMENT
1
2
3
Gate
Main Terminal 2
Main Terminal 1
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MAC
97Ax
AYWWG
G
MAC97Ax = Device Code
x = 4, 6, or 8
A = Assembly Location
Y = Year
WW = Work Week
G =PbFree Package
(Note: Microdot may be in either location)
MARKING
DIAGRAM
1
2
3
1
2
BENT LEAD
TAPE & REEL
AMMO PACK
STRAIGHT LEAD
BULK PACK
3
MAC97 Series
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2
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, JunctiontoCase
R
q
JC
75 °C/W
Thermal Resistance, JunctiontoAmbient
R
q
JA
200 °C/W
Maximum Lead Temperature for Soldering Purposes for 10 Seconds T
L
260 °C
ELECTRICAL CHARACTERISTICS (T
C
= 25°C unless otherwise noted; Electricals apply in both directions)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Peak Repetitive Blocking Current
(V
D
= Rated V
DRM
, V
RRM
; Gate Open) T
J
= 25°C
T
J
= +110°C
I
DRM
, I
RRM
10
100
mA
mA
ON CHARACTERISTICS
Peak OnState Voltage
(I
TM
= ".85 A Peak; Pulse Width v 2.0 ms, Duty Cycle v 2.0%)
V
TM
1.9 V
Gate Trigger Current (Continuous dc)
(V
D
= 12 Vdc, R
L
= 100 W)
MT2(+), G(+)
MT2(+), G()
MT2(), G()
MT2(), G(+)
I
GT
5.0
5.0
5.0
7.0
mA
Gate Trigger Voltage (Continuous dc)
(V
D
= 12 Vdc, R
L
= 100 W)
MT2(+), G(+) All Types
MT2(+), G() All Types
MT2(), G() All Types
MT2(), G(+) All Types
V
GT
.66
.77
.84
.88
2.0
2.0
2.0
2.5
V
Gate NonTrigger Voltage
(V
D
= 12 V, R
L
= 100 W, T
J
= 110°C)
All Four Quadrants
V
GD
0.1 V
Holding Current
(V
D
= 12 Vdc, Initiating Current = 200 mA, Gate Open)
I
H
1.5 10 mA
Turn-On Time
(V
D
= Rated V
DRM
, I
TM
= 1.0 A pk, I
G
= 25 mA)
t
gt
2.0
ms
DYNAMIC CHARACTERISTICS
Critical RateofRise of Commutation Voltage
(V
D
= Rated V
DRM
, I
TM
= .84 A,
Commutating di/dt = .3 A/ms, Gate Unenergized, T
C
= 50°C)
dV/dt(c) 5.0
V/ms
Critical Rate of Rise of OffState Voltage
(V
D
= Rated V
DRM
, T
C
= 110°C, Gate Open, Exponential Waveform
dv/dt 25
V/ms
MAC97 Series
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3
+ Current
+ Voltage
V
TM
I
H
Symbol Parameter
V
DRM
Peak Repetitive Forward Off State Voltage
I
DRM
Peak Forward Blocking Current
V
RRM
Peak Repetitive Reverse Off State Voltage
I
RRM
Peak Reverse Blocking Current
Voltage Current Characteristic of Triacs
(Bidirectional Device)
I
DRM
at V
DRM
on state
off state
I
RRM
at V
RRM
Quadrant 1
MainTerminal 2 +
Quadrant 3
MainTerminal 2
V
TM
I
H
V
TM
Maximum On State Voltage
I
H
Holding Current
MT1
(+) I
GT
GATE
(+) MT2
REF
MT1
() I
GT
GATE
(+) MT2
REF
MT1
(+) I
GT
GATE
() MT2
REF
MT1
() I
GT
GATE
() MT2
REF
MT2 NEGATIVE
(Negative Half Cycle)
MT2 POSITIVE
(Positive Half Cycle)
+
Quadrant III Quadrant IV
Quadrant II Quadrant I
Quadrant Definitions for a Triac
I
GT
+ I
GT
All polarities are referenced to MT1.
With inphase signals (using standard AC lines) quadrants I and III are used.

MAC97A6RLRPG

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
Triacs THY .6A 400V TRIAC
Lifecycle:
New from this manufacturer.
Delivery:
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