www.vishay.com Document Number: 91058
2 S11-1049-Rev. C, 30-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRF820AS, SiHF820AS, IRF820AL, SiHF820AL
Vishay Siliconix
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 μs; duty cycle 2 %.
c. C
oss
eff. is a fixed capacitance that gives the same charging time as C
oss
while V
DS
is rising from 0 % to 80 % V
DS
.
d. Uses IRF820A/SiHF820A data and test conditions.
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYP. MAX. UNIT
Maximum Junction-to-Ambient (PCB
Mounted, steady-state)
a
R
thJA
-62
°C/W
Maximum Junction-to-Case (Drain) R
thJC
-2.5
SPECIFICATIONS (T
J
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage V
DS
V
GS
= 0, I
D
= 250 μA 500 - - V
V
DS
Temperature Coefficient V
DS
/T
J
Reference to 25 °C, I
D
= 1 mA
d
-0.60-V/°C
Gate-Source Threshold Voltage V
GS(th)
V
DS
= V
GS
, I
D
= 250 μA 2.0 - 4.5 V
Gate-Source Leakage I
GSS
V
GS
= ± 30 V - - ± 100 nA
Zero Gate Voltage Drain Current I
DSS
V
DS
= 500 V, V
GS
= 0 V - - 25
μA
V
DS
= 400 V, V
GS
= 0 V, T
J
= 125 °C - - 250
Drain-Source On-State Resistance R
DS(on)
V
GS
= 10 V I
D
= 1.5 A
b
--3.0
Forward Transconductance g
fs
V
DS
= 50 V, I
D
= 1.5 A
d
1.4 - - S
Dynamic
Input Capacitance C
iss
V
GS
= 0 V,
V
DS
= 25 V,
f = 1.0 MHz, see fig. 5
d
- 340 -
pFOutput Capacitance C
oss
-53-
Reverse Transfer Capacitance C
rss
-2.7-
Output Capacitance C
oss
V
GS
= 0 V
V
DS
= 1.0 V, f = 1.0 MHz - 490 -
V
DS
= 400 V, f = 1.0 MHz - 15 -
Effective Output Capacitance C
oss
eff. V
DS
= 0 V to 400 V
c, d
-28-
Total Gate Charge Q
g
V
GS
= 10 V
I
D
= 2.5 A, V
DS
= 400 V,
see fig. 6 and 13
b, d
--17
nC Gate-Source Charge Q
gs
--4.3
Gate-Drain Charge Q
gd
--8.5
Turn-On Delay Time t
d(on)
V
DD
= 250 V, I
D
= 2.5 A,
R
g
= 21 , R
D
= 97 , see fig. 10
b, d
-8.1-
ns
Rise Time t
r
-12-
Turn-Off Delay Time t
d(off)
-16-
Fall Time t
f
-13-
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current I
S
MOSFET symbol
showing the
integral reverse
p - n junction diode
--2.5
A
Pulsed Diode Forward Current
a
I
SM
--10
Body Diode Voltage V
SD
T
J
= 25 °C, I
S
= 2.5 A, V
GS
= 0 V
b
--1.6V
Body Diode Reverse Recovery Time t
rr
T
J
= 25 °C, I
F
= 2.5 A, dI/dt = 100 A/μs
b, d
- 330 500 ns
Body Diode Reverse Recovery Charge Q
rr
- 760 1140 nC
Forward Turn-On Time t
on
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
and L
D
)
S
D
G
