MBR25xxCT, MBRF25xxCT, MBRB25xxCT
www.vishay.com
Vishay General Semiconductor
Revision: 06-Dec-16
1
Document Number: 88675
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Dual Common Cathode Schottky Rectifier
FEATURES
• Power pack
• Guardring for overvoltage protection
• Lower power losses, high efficiency
• Low forward voltage drop
• High forward surge capability
• High frequency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak of
245 °C (for TO-263AB package)
• Solder bath temperature 275 °C maximum, 10 s, per
JESD 22-B106 (for TO-220AB and ITO-220AB package)
• AEC-Q101 qualified available
- Automotive ordering code: base P/NHE3_A
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in low voltage, high frequency rectifier of switching
mode power supplies, freewheeling diodes, DC/DC
converters, or polarity protection application.
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, TO-263AB
Epoxy meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified
Base P/NHE3_X - RoHS-compliant, AEC-Q101 qualified
(“_X” denotes revision code, e.g. A, B, ...)
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix meets JESD 201 class 2 whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity: as marked
Mounting Torque: 10 in-lbs maximum
PRIMARY CHARACTERISTICS
I
F(AV)
2 x 12.5 A
V
RRM
35 V, 45 V, 60 V
I
FSM
150 A
V
F
0.73 V at 30 A, 0.65 V at 15 A
T
J
max. 150 °C
Package TO-220AB, ITO-220AB, TO-263AB
Diode variations Common cathode
CASE
PIN 2
PIN 1
PIN 3
TO-220AB
MBR25xxCT
ITO-220AB
MBRF25xxCT
MBRB25xxCT
PIN 1
PIN 2
K
HEATSINK
1
2
3
1
2
K
TO-263AB
PIN 2
PIN 1
PIN 3
1
2
3
MAXIMUM RATINGS (T
C
= 25 °C unless otherwise noted)
PARAMETER SYMBOL MBR2535CT MBR2545CT MBR2560CT UNIT
Maximum repetitive peak reverse voltage V
RRM
35 45 60
VWorking peak reverse voltage V
RWM
35 45 60
Maximum DC blocking voltage V
DC
35 45 60
Maximum average forward rectified current
at T
C
= 130 °C
total device
I
F(AV)
25
A
per diode 12.5
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
I
FSM
150
A
Peak repetitive reverse surge current per diode
at t
p
= 2 μs, 1 kHz
I
RRM
1.0 0.5
Peak non-repetitive reverse energy (8/20 μs waveform)
per diode
E
RSM
25 mJ
Electrostatic discharge capacitor voltage human body
model: C = 100 pF, R = 1.5 k
V
C
25 kV
Voltage rate of change (rated V
R
) dV/dt 10 000 V/μs
Operating junction temperature range T
J
-65 to +150
°C
Storage temperature range T
STG
-65 to +175
Isolation voltage (ITO-220AB only) from terminal to heatsink
t = 1 min
V
AC
1500 V
