IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFA26N50P3 IXFP26N50P3
IXFQ26N50P3 IXFH26N50P3
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Note 1. Pulse test, t 300s, duty cycle, d 2%.
Symbol Test Conditions Characteristic Values
(T
J
= 25C, Unless Otherwise Specified) Min. Typ. Max
g
fs
V
DS
= 20V, I
D
= 0.5 • I
D25
, Note 1 14 23 S
R
Gi
Gate Input Resistance 2.1
C
iss
2220 pF
C
oss
V
GS
= 0V, V
DS
= 25V, f = 1MHz 280 pF
C
rss
8 pF
C
o(er)
108 pF
C
o(tr)
185 pF
t
d(on)
21 ns
t
r
7 ns
t
d(off)
38 ns
t
f
5 ns
Q
g(on)
42 nC
Q
gs
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
11 nC
Q
gd
15 nC
R
thJC
0.25 C/W
R
thCS
TO-220 0.50 C/W
TO-3P & TO-247 0.25 C/W
Resistive Switching Times
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
R
G
= 3(External)
Effective Output Capacitance
Energy related
Time related
V
GS
= 0V
V
DS
= 0.8 • V
DSS
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(T
J
= 25C, Unless Otherwise Specified) Min. Typ. Max
I
S
V
GS
= 0V 26 A
I
SM
Repetitive, pulse Width Limited by T
JM
104 A
V
SD
I
F
= I
S
, V
GS
= 0V, Note 1 1.4 V
t
rr
250 ns
Q
RM
0.9 nC
I
RM
10.2 A
I
F
= 13A, -di/dt = 100A/μs
V
R
= 100V
