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IXFQ26N50P3

P1-P3P4-P6
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFA26N50P3 IXFP26N50P3
IXFQ26N50P3 IXFH26N50P3
Fig. 7. Input Admittance
0
5
10
15
20
25
30
3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5
V
GS
- Volts
I
D
- Amperes
T
J
= 125
o
C
25
o
C
- 40
o
C
Fig. 8. Transconductance
0
5
10
15
20
25
30
35
40
45
0 5 10 15 20 25 30
I
D
- Amperes
g
f s
- Siemens
T
J
= - 40
o
C
125
o
C
25
o
C
Fig. 9. Forward Voltage Drop of Intrinsic Diode
0
10
20
30
40
50
60
70
80
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
V
SD
- Volts
I
S
- Amperes
T
J
= 125
o
C
T
J
= 25
o
C
Fig. 10. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0 5 10 15 20 25 30 35 40 45
Q
G
- NanoCoulombs
V
GS
- Volts
V
DS
= 250V
I
D
= 13A
I
G
= 10mA
Fig. 11. Capacitance
1
10
100
1,000
10,000
0 5 10 15 20 25 30 35 40
V
DS
- Volts
Capacitance - PicoFarad
s
f
= 1 MHz
C
iss
C
rss
C
oss
Fig. 12. Output Capacitance Stored Energy
0
2
4
6
8
10
12
14
0 50 100 150 200 250 300 350 400 450 500
V
DS
- Volts
E
OSS
- MicroJoules
© 2018 IXYS CORPORATION, All Rights Reserved
IXYS REF: F_26N50P3(W6) 5-19-17-B
IXFA26N50P3 IXFP26N50P3
IXFQ26N50P3 IXFH26N50P3
Fig. 14. Maximum Transient Thermal Impedance
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- K / W
Fig. 13. Forward-Bias Safe Operating Area
0.1
1
10
100
10 100 1,000
V
DS
- Volts
I
D
- Am peres
T
J
= 150
o
C
T
C
= 25
o
C
Sin
g
le Pulse
1ms
100μs
R
DS(on)
Limit
25μs
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFA26N50P3 IXFP26N50P3
IXFQ26N50P3 IXFH26N50P3
TO-247 Outline
1 - Gate
2,4 - Drain
3 - Source
TO-263 Outline
1 - Gate
2,4 - Drain
3 - Source
TO-220 Outline
1 - Gate
2,4 - Drain
3 - Source
TO-3P Outline
1 - Gate
2,4 - Drain
3 - Source
P1-P3P4-P6

IXFQ26N50P3

Mfr. #:
Buy IXFQ26N50P3
Manufacturer:
Littelfuse
Description:
MOSFET Polar3 HiPerFET Power MOSFET
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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